PMID- 35077132
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220210
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 14
IP  - 5
DP  - 2022 Feb 9
TI  - Advances in RF Glow Discharge Optical Emission Spectrometry Characterization of 
      Intrinsic and Boron-Doped Diamond Coatings.
PG  - 7405-7416
LID - 10.1021/acsami.1c20785 [doi]
AB  - Accurate determination of the effective doping range within diamond thin films is 
      important for fine-tuning of electrical conductivity. Nevertheless, it is not 
      easily attainable by the commonly adopted techniques. In this work, pulsed RF 
      glow discharge optical emission spectrometry (GD-OES) combined with ultrafast 
      sputtering (UFS) is applied for the first time to acquire elemental depth 
      profiles of intrinsic diamond coatings and boron content bulk distribution in 
      films. The GD-OES practical advances presented here enabled quick elemental 
      profiling with noteworthy depth resolution and determination of the film 
      interfaces. The erosion rates and layer thicknesses were measured using 
      differential interferometric profiling (DIP), demonstrating a close correlation 
      between the coating thickness and the carbon/hydrogen gas ratio. Moreover, DIP 
      and the adopted semiquantification methodology revealed a nonhomogeneous bulk 
      distribution of boron within the diamond crystalline structure, i.e., boron 
      doping is both substitutional and interstitial within the diamond framework. DIP 
      measurements also showed that effective boron doping is not linearly correlated 
      to the increasing content introduced into the diamond coating. This is a finding 
      well supported by X-ray diffraction (XRD) Rietveld refinement and X-ray 
      photoelectron spectroscopy (XPS). This work demonstrates the advantage of 
      applying advanced GD-OES operation modes due to its ease of use, affordability, 
      accuracy, and high-speed depth profile analysis capability.
FAU - Sharma, Dhananjay K
AU  - Sharma DK
AUID- ORCID: 0000-0002-7903-4099
AD  - CICECO, Department of Materials and Ceramic Engineering, University of Aveiro, 
      3810-193 Aveiro, Portugal.
AD  - Institute of Physics of the Czech Academy of Sciences, Cukrovarnicka 10, 16200 
      Prague, Czech Republic.
AD  - Faculty of Electrical Engineering, Czech Technical University in Prague, 
      Technicka 2, 166 27 Prague 6, Czech Republic.
FAU - Girao, Ana V
AU  - Girao AV
AD  - CICECO, Department of Materials and Ceramic Engineering, University of Aveiro, 
      3810-193 Aveiro, Portugal.
FAU - Chapon, Patrick
AU  - Chapon P
AD  - Horiba France, Bd Th Gobert, 91120 Palaiseau, France.
FAU - Neto, Miguel A
AU  - Neto MA
AD  - CICECO, Department of Materials and Ceramic Engineering, University of Aveiro, 
      3810-193 Aveiro, Portugal.
FAU - Oliveira, Filipe J
AU  - Oliveira FJ
AD  - CICECO, Department of Materials and Ceramic Engineering, University of Aveiro, 
      3810-193 Aveiro, Portugal.
FAU - Silva, Rui F
AU  - Silva RF
AUID- ORCID: 0000-0002-2584-1792
AD  - CICECO, Department of Materials and Ceramic Engineering, University of Aveiro, 
      3810-193 Aveiro, Portugal.
LA  - eng
PT  - Journal Article
DEP - 20220125
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
SB  - IM
OTO - NOTNLM
OT  - GD-OES
OT  - HFCVD
OT  - Raman spectroscopy
OT  - Rietveld refinement
OT  - XPS
OT  - boron doping
OT  - diamond
EDAT- 2022/01/26 06:00
MHDA- 2022/01/26 06:01
CRDT- 2022/01/25 17:09
PHST- 2022/01/26 06:00 [pubmed]
PHST- 2022/01/26 06:01 [medline]
PHST- 2022/01/25 17:09 [entrez]
AID - 10.1021/acsami.1c20785 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2022 Feb 9;14(5):7405-7416. doi: 
      10.1021/acsami.1c20785. Epub 2022 Jan 25.