PMID- 35108693
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220223
IS  - 1361-648X (Electronic)
IS  - 0953-8984 (Linking)
VI  - 34
IP  - 16
DP  - 2022 Feb 22
TI  - Two-dimensional graphyne-graphene heterostructure for all-carbon transistors.
LID - 10.1088/1361-648X/ac513b [doi]
AB  - Semiconducting graphyne is a two-dimensional (2D) carbon allotrope with high 
      mobility, which is promising for next generation all-carbon field effect 
      transistors (FETs). In this work, the electronic properties of van der Waals 
      heterostructure consists of 2D graphyne and graphene (GY/G) were studied from 
      first-principles calculations. It is found that the band dispersion of isolated 
      graphene and graphyne remain intact after they were stacked together. Due to the 
      charge transfer from graphene to graphyne, the Fermi level of the GY/G 
      heterostructure crosses the VB of graphene and the CB of graphyne. As a result, 
      n-type Ohmic contact with zero Schottky barrier height (SBH) is obtained in GY/G 
      based FETs. Moreover, the electron tunneling from graphene to graphyne is found 
      to be efficient. Therefore, excellent electron transport properties can be 
      expected in GY/G based FETs. Lastly, it is demonstrated that the SBH in the GY/G 
      heterostructure can be tune by applying a vertical external electric field or 
      doping, and the transition from n-type to p-type contact can be realized. These 
      results show that GY/G is potentially suitable for 2D FETs, and provide insights 
      into the development of all-carbon electronic devices.
CI  - (c) 2022 IOP Publishing Ltd.
FAU - Huang, Jing
AU  - Huang J
AUID- ORCID: 0000-0003-4714-5744
AD  - Beijing Computational Science Research Center, 100193 Beijing, People's Republic 
      of China.
FAU - Kang, Jun
AU  - Kang J
AUID- ORCID: 0000-0003-4788-0028
AD  - Beijing Computational Science Research Center, 100193 Beijing, People's Republic 
      of China.
LA  - eng
PT  - Journal Article
DEP - 20220222
PL  - England
TA  - J Phys Condens Matter
JT  - Journal of physics. Condensed matter : an Institute of Physics journal
JID - 101165248
SB  - IM
OTO - NOTNLM
OT  - Ohmic contact
OT  - Schottky barrier height
OT  - all-carbon
OT  - electron tunneling
OT  - field effect transistors
OT  - graphyne
OT  - two-dimensional heterostructure
EDAT- 2022/02/03 06:00
MHDA- 2022/02/03 06:01
CRDT- 2022/02/02 20:07
PHST- 2021/12/14 00:00 [received]
PHST- 2022/02/02 00:00 [accepted]
PHST- 2022/02/03 06:00 [pubmed]
PHST- 2022/02/03 06:01 [medline]
PHST- 2022/02/02 20:07 [entrez]
AID - 10.1088/1361-648X/ac513b [doi]
PST - epublish
SO  - J Phys Condens Matter. 2022 Feb 22;34(16). doi: 10.1088/1361-648X/ac513b.