PMID- 35160649
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220219
IS  - 1996-1944 (Print)
IS  - 1996-1944 (Electronic)
IS  - 1996-1944 (Linking)
VI  - 15
IP  - 3
DP  - 2022 Jan 18
TI  - A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer.
LID - 10.3390/ma15030703 [doi]
LID - 703
AB  - An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer 
      with a 2 nm AlGaN electron-blocking layer (EBL) is investigated for the first 
      time for millimeter-wave applications. Compared with the double heterostructure 
      field effect transistor (DHFET), the AlGaN/GaN HEMT with the GaN:C/EBL buffer has 
      a lower vertical leakage, higher thermal stability, and better RF performance. In 
      addition, AlGaN EBL can prevent carbon-related traps from GaN:C and improve 
      electron confinement in 2DEG during high-frequency operation. Finally, a P(out) 
      of 31.2 dBm with PAE of 21.7% were measured at 28 GHz at 28 V. These results 
      demonstrated the great potential of HEMTs using GaN:C with AlGaN EBL epitaxy 
      technology for millimeter-wave applications.
FAU - Weng, You-Chen
AU  - Weng YC
AD  - College of Photonics, National Yang Ming Chiao Tung University, Tainan 71150, 
      Taiwan.
FAU - Lin, Yueh-Chin
AU  - Lin YC
AD  - Department of Materials Science and Engineering, National Yang Ming Chiao Tung 
      University, Hsinchu 30010, Taiwan.
FAU - Hsu, Heng-Tung
AU  - Hsu HT
AUID- ORCID: 0000-0002-7753-5690
AD  - International College of Semiconductor Technology, National Yang Ming Chiao Tung 
      University, Hsinchu 30010, Taiwan.
FAU - Kao, Min-Lu
AU  - Kao ML
AUID- ORCID: 0000-0002-6517-2220
AD  - Department of Materials Science and Engineering, National Yang Ming Chiao Tung 
      University, Hsinchu 30010, Taiwan.
FAU - Huang, Hsuan-Yao
AU  - Huang HY
AD  - International College of Semiconductor Technology, National Yang Ming Chiao Tung 
      University, Hsinchu 30010, Taiwan.
FAU - Ueda, Daisuke
AU  - Ueda D
AD  - International College of Semiconductor Technology, National Yang Ming Chiao Tung 
      University, Hsinchu 30010, Taiwan.
FAU - Ha, Minh-Thien-Huu
AU  - Ha MT
AD  - Department of Materials Science and Engineering, National Yang Ming Chiao Tung 
      University, Hsinchu 30010, Taiwan.
FAU - Yang, Chih-Yi
AU  - Yang CY
AD  - International College of Semiconductor Technology, National Yang Ming Chiao Tung 
      University, Hsinchu 30010, Taiwan.
FAU - Maa, Jer-Shen
AU  - Maa JS
AD  - College of Photonics, National Yang Ming Chiao Tung University, Tainan 71150, 
      Taiwan.
FAU - Chang, Edward-Yi
AU  - Chang EY
AD  - Department of Materials Science and Engineering, National Yang Ming Chiao Tung 
      University, Hsinchu 30010, Taiwan.
AD  - International College of Semiconductor Technology, National Yang Ming Chiao Tung 
      University, Hsinchu 30010, Taiwan.
AD  - Department of Electronics Engineering, National Yang Ming Chiao Tung University, 
      Hsinchu 30010, Taiwan.
FAU - Dee, Chang-Fu
AU  - Dee CF
AUID- ORCID: 0000-0003-1015-9181
AD  - Institute of Microengineering and Nanoelectronics (IMEN), University Kebangsaan 
      Malaysia, Level 4, Research Complex, Bangi 43600, Malaysia.
LA  - eng
PT  - Journal Article
DEP - 20220118
PL  - Switzerland
TA  - Materials (Basel)
JT  - Materials (Basel, Switzerland)
JID - 101555929
PMC - PMC8836704
OTO - NOTNLM
OT  - GaN
OT  - HEMT
OT  - electron-blocking layer
COIS- The authors declare no conflict of interest.
EDAT- 2022/02/16 06:00
MHDA- 2022/02/16 06:01
PMCR- 2022/01/18
CRDT- 2022/02/15 01:08
PHST- 2021/11/28 00:00 [received]
PHST- 2022/01/12 00:00 [revised]
PHST- 2022/01/13 00:00 [accepted]
PHST- 2022/02/15 01:08 [entrez]
PHST- 2022/02/16 06:00 [pubmed]
PHST- 2022/02/16 06:01 [medline]
PHST- 2022/01/18 00:00 [pmc-release]
AID - ma15030703 [pii]
AID - materials-15-00703 [pii]
AID - 10.3390/ma15030703 [doi]
PST - epublish
SO  - Materials (Basel). 2022 Jan 18;15(3):703. doi: 10.3390/ma15030703.