PMID- 35187807
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220716
IS  - 2198-3844 (Electronic)
IS  - 2198-3844 (Linking)
VI  - 9
IP  - 12
DP  - 2022 Apr
TI  - Oxide Two-Dimensional Electron Gas with High Mobility at Room-Temperature.
PG  - e2105652
LID - 10.1002/advs.202105652 [doi]
LID - 2105652
AB  - The prospect of 2-dimensional electron gases (2DEGs) possessing high mobility at 
      room temperature in wide-bandgap perovskite stannates is enticing for oxide 
      electronics, particularly to realize transparent and high-electron mobility 
      transistors. Nonetheless only a small number of studies to date report 2DEGs in 
      BaSnO(3) -based heterostructures. Here, 2DEG formation at the LaScO(3) /BaSnO(3) 
      (LSO/BSO) interface with a room-temperature mobility of 60 cm(2)  V(-1)  s(-1) at 
      a carrier concentration of 1.7 x 10(13)  cm(-2) is reported. This is an order of 
      magnitude higher mobility at room temperature than achieved in SrTiO(3) -based 
      2DEGs. This is achieved by combining a thick BSO buffer layer with an ex situ 
      high-temperature treatment, which not only reduces the dislocation density but 
      also produces a SnO(2) -terminated atomically flat surface, followed by the 
      growth of an overlying BSO/LSO interface. Using weak beam dark-field transmission 
      electron microscopy imaging and in-line electron holography technique, a 
      reduction of the threading dislocation density is revealed, and direct evidence 
      for the spatial confinement of a 2DEG at the BSO/LSO interface is provided. This 
      work opens a new pathway to explore the exciting physics of stannate-based 2DEGs 
      at application-relevant temperatures for oxide nanoelectronics.
CI  - (c) 2022 The Authors. Advanced Science published by Wiley-VCH GmbH.
FAU - Eom, Kitae
AU  - Eom K
AUID- ORCID: 0000-0002-8114-609X
AD  - Department of Materials Science and Engineering, University of Wisconsin-Madison, 
      Madison, WI, 53706, USA.
FAU - Paik, Hanjong
AU  - Paik H
AUID- ORCID: 0000-0002-8363-4679
AD  - Department of Material Science and Engineering, Cornell University, Ithaca, NY, 
      14853, USA.
AD  - Platform for the Accelerated Realization, Analysis, and Discovery of Interface 
      Materials (PARADIM), Cornell University, Ithaca, NY, 14853, USA.
FAU - Seo, Jinsol
AU  - Seo J
AD  - Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 16419, 
      Republic of Korea.
FAU - Campbell, Neil
AU  - Campbell N
AD  - Department of Physics, University of Wisconsin, Madison, WI, 53706, USA.
FAU - Tsymbal, Evgeny Y
AU  - Tsymbal EY
AD  - Department of Physics and Astronomy, University of Nebraska, Lincoln, NE, 68588, 
      USA.
FAU - Oh, Sang Ho
AU  - Oh SH
AD  - Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 16419, 
      Republic of Korea.
FAU - Rzchowski, Mark S
AU  - Rzchowski MS
AD  - Department of Physics, University of Wisconsin, Madison, WI, 53706, USA.
FAU - Schlom, Darrell G
AU  - Schlom DG
AD  - Department of Material Science and Engineering, Cornell University, Ithaca, NY, 
      14853, USA.
AD  - Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, 14850, USA.
AD  - Leibniz-Institut fur Kristallzuchtung, Berlin, 12489, Germany.
FAU - Eom, Chang-Beom
AU  - Eom CB
AUID- ORCID: 0000-0002-8854-1439
AD  - Department of Materials Science and Engineering, University of Wisconsin-Madison, 
      Madison, WI, 53706, USA.
LA  - eng
GR  - GBMF9065/Gordon and Betty Moore Foundation's/
GR  - ONR N00014-20-1-2844/Gordon and Betty Moore Foundation's/
GR  - FA9550-15-1-0334/Gordon and Betty Moore Foundation's/
GR  - U.S. Department of Energy/
GR  - Office of Science/
GR  - DE-FG02-06ER46327/Office of Basic Energy Sciences/
GR  - DMR-2039380/National Science Foundation/
GR  - Samsung Research Funding/
GR  - SRFC-MA1702-01/Incubation Center of Samsung Electronics/
PT  - Journal Article
DEP - 20220220
PL  - Germany
TA  - Adv Sci (Weinh)
JT  - Advanced science (Weinheim, Baden-Wurttemberg, Germany)
JID - 101664569
SB  - IM
PMC - PMC9036036
OTO - NOTNLM
OT  - 2-dimensional electron gas
OT  - alkaline-earth stannate
OT  - room temperature high mobility
OT  - transparent conducting oxide
COIS- The authors declare no conflict of interest.
EDAT- 2022/02/22 06:00
MHDA- 2022/02/22 06:01
PMCR- 2022/02/20
CRDT- 2022/02/21 06:10
PHST- 2021/12/26 00:00 [received]
PHST- 2022/02/22 06:00 [pubmed]
PHST- 2022/02/22 06:01 [medline]
PHST- 2022/02/21 06:10 [entrez]
PHST- 2022/02/20 00:00 [pmc-release]
AID - ADVS3614 [pii]
AID - 10.1002/advs.202105652 [doi]
PST - ppublish
SO  - Adv Sci (Weinh). 2022 Apr;9(12):e2105652. doi: 10.1002/advs.202105652. Epub 2022 
      Feb 20.