PMID- 35208294
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220228
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 13
IP  - 2
DP  - 2022 Jan 22
TI  - Breakdown Behavior of Metal Contact Positions in GaN HEMT with Nitrogen-Implanted 
      Gate Using TCAD Simulation.
LID - 10.3390/mi13020169 [doi]
LID - 169
AB  - In this study, the breakdown behavior of a calibrated depletion mode AlGaN/GaN 
      transistor with a nitrogen-implanted gate region was simulated and analyzed using 
      Sentaurus TCAD simulation, with particular emphasis on the metal contact design 
      rule for a GaN-based high-electron-mobility transistor (HEMT) device with a 
      variety of 2DEG concentrations grown on a silicon substrate. The breakdown 
      behaviors for different source/drain contact schemes were investigated using 
      Sentaurus simulation. The metal contact positions within the source and drain 
      exhibited different piezoelectric effects and induced additional polarization 
      charges for the 2DEG (two-dimensional electron gas). Due to the variation of 
      source/drain contact schemes, electron density has changed the way to increase 
      the electric field distribution, which in turn increased the breakdown voltage. 
      The electric field distribution and 2DEG profiles were simulated to demonstrate 
      that the piezoelectric effects at different metal contact positions considerably 
      influence the breakdown voltage at different distances between drain metal 
      contacts. When the contact position was far away from the AlGaN/GaN, the 
      breakdown voltage of the nitrogen-implanted gated device decreased by 41% because 
      of the relatively low electron density and weak induced piezoelectric effect. 
      This reduction is significant for a 20 mum source-drain length. The minimum 
      critical field used for the breakdown simulation was 4 MV/cm. The simulated 
      AlGaN/GaN device exhibits different breakdown behaviors at different metal 
      contact positions in the drain.
FAU - Sheu, Gene
AU  - Sheu G
AD  - Department of Computer Science and Information Engineering, Asia University, 
      Taichung 41354, Taiwan.
FAU - Song, Yu-Lin
AU  - Song YL
AUID- ORCID: 0000-0002-9539-588X
AD  - Department of Computer Science and Information Engineering, Asia University, 
      Taichung 41354, Taiwan.
AD  - Department of Bioinformatics and Medical Engineering, Asia University, Taichung 
      41354, Taiwan.
FAU - Mogarala, Ramyasri
AU  - Mogarala R
AD  - Department of Computer Science and Information Engineering, Asia University, 
      Taichung 41354, Taiwan.
FAU - Susmitha, Dupati
AU  - Susmitha D
AUID- ORCID: 0000-0003-2831-7184
AD  - Department of Computer Science and Information Engineering, Asia University, 
      Taichung 41354, Taiwan.
FAU - Issac, Kutagulla
AU  - Issac K
AUID- ORCID: 0000-0002-2819-6071
AD  - Department of Computer Science and Information Engineering, Asia University, 
      Taichung 41354, Taiwan.
LA  - eng
GR  - MOST 110-2622-E-468-002/Ministry of Science and Technology of Taiwan, R.O.C.,/
GR  - 110-2218-E-468 -001 -MBK/Ministry of Science and Technology of Taiwan, R.O.C.,/
PT  - Journal Article
DEP - 20220122
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC8879214
OTO - NOTNLM
OT  - 2DEG
OT  - AlGaN/GaN
OT  - HEMT
OT  - TCAD
OT  - metal
COIS- The authors declare no conflict of interest.
EDAT- 2022/02/26 06:00
MHDA- 2022/02/26 06:01
PMCR- 2022/01/22
CRDT- 2022/02/25 01:14
PHST- 2021/12/17 00:00 [received]
PHST- 2022/01/20 00:00 [revised]
PHST- 2022/01/20 00:00 [accepted]
PHST- 2022/02/25 01:14 [entrez]
PHST- 2022/02/26 06:00 [pubmed]
PHST- 2022/02/26 06:01 [medline]
PHST- 2022/01/22 00:00 [pmc-release]
AID - mi13020169 [pii]
AID - micromachines-13-00169 [pii]
AID - 10.3390/mi13020169 [doi]
PST - epublish
SO  - Micromachines (Basel). 2022 Jan 22;13(2):169. doi: 10.3390/mi13020169.