PMID- 35268881
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220314
IS  - 1996-1944 (Print)
IS  - 1996-1944 (Electronic)
IS  - 1996-1944 (Linking)
VI  - 15
IP  - 5
DP  - 2022 Feb 23
TI  - Electron Heat Source Driven Heat Transport in GaN at Nanoscale: Electron-Phonon 
      Monte Carlo Simulations and a Two Temperature Model.
LID - 10.3390/ma15051651 [doi]
LID - 1651
AB  - The thermal energy transport in semiconductors is mostly determined by phonon 
      transport. However in polar semiconductors like GaN electronic contribution to 
      the thermal transport is non-negligible. In this paper, we use an electron-phonon 
      Monte Carlo (MC) method to study temperature distribution and thermal properties 
      in a two-dimensional GaN computational domain with a localized, steady and 
      continuous electron heat source at one end. Overall, the domain mimics the 
      two-dimensional electron gas (2DEG) channel of a typical GaN high electron 
      mobility transistor (HEMT). High energy electrons entering the domain from the 
      source interact with the phonons, and drift under the influence of an external 
      electric field. Cases of the electric field being uniform and non-uniform are 
      investigated separately. A two step/temperature analytical model is proposed to 
      describe the electron as well as phonon temperature profiles and solved using the 
      finite difference method (FDM). The FDM results are compared with the MC results 
      and found to be in good agreement.
FAU - Muthukunnil Joseph, Anish
AU  - Muthukunnil Joseph A
AD  - Key Laboratory of Thermal Science and Power Engineering, Ministry of Education, 
      Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China.
FAU - Cao, Bingyang
AU  - Cao B
AUID- ORCID: 0000-0003-3588-972X
AD  - Key Laboratory of Thermal Science and Power Engineering, Ministry of Education, 
      Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China.
LA  - eng
GR  - 51825601/National Natural Science Foundation of China/
GR  - U20A20301/National Natural Science Foundation of China/
PT  - Journal Article
DEP - 20220223
PL  - Switzerland
TA  - Materials (Basel)
JT  - Materials (Basel, Switzerland)
JID - 101555929
PMC - PMC8911358
OTO - NOTNLM
OT  - Boltzmann transport equation
OT  - electron-phonon Monte Carlo
OT  - electron-phonon interaction
OT  - two temperature model
COIS- The authors declare no conflict of interest.
EDAT- 2022/03/11 06:00
MHDA- 2022/03/11 06:01
PMCR- 2022/02/23
CRDT- 2022/03/10 15:31
PHST- 2022/01/14 00:00 [received]
PHST- 2022/02/08 00:00 [revised]
PHST- 2022/02/18 00:00 [accepted]
PHST- 2022/03/10 15:31 [entrez]
PHST- 2022/03/11 06:00 [pubmed]
PHST- 2022/03/11 06:01 [medline]
PHST- 2022/02/23 00:00 [pmc-release]
AID - ma15051651 [pii]
AID - materials-15-01651 [pii]
AID - 10.3390/ma15051651 [doi]
PST - epublish
SO  - Materials (Basel). 2022 Feb 23;15(5):1651. doi: 10.3390/ma15051651.