PMID- 35273177
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220315
IS  - 2045-2322 (Electronic)
IS  - 2045-2322 (Linking)
VI  - 12
IP  - 1
DP  - 2022 Mar 10
TI  - An enhanced two-dimensional hole gas (2DHG) C-H diamond with positive surface 
      charge model for advanced normally-off MOSFET devices.
PG  - 4203
LID - 10.1038/s41598-022-05180-4 [doi]
LID - 4203
AB  - Though the complementary power field effect transistors (FETs), e.g., 
      metal-oxide-semiconductor-FETs (MOSFETs) based on wide bandgap materials, enable 
      low switching losses and on-resistance, p-channel FETs are not feasible in any 
      wide bandgap material other than diamond. In this paper, we propose the first 
      work to investigate the impact of fixed positive surface charge density on 
      achieving normally-off and controlling threshold voltage operation obtained on 
      p-channel two-dimensional hole gas (2DHG) hydrogen-terminated (C-H) diamond FET 
      using nitrogen doping in the diamond substrate. In general, a p-channel diamond 
      MOSFET demonstrates the normally-on operation, but the normally-off operation is 
      also a critical requirement of the feasible electronic power devices in terms of 
      safety operation. The characteristics of the C-H diamond MOSFET have been 
      analyzed with the two demonstrated charge sheet models using the two-dimensional 
      Silvaco Atlas TCAD. It shows that the fixed-Fermi level in the bulk diamond is 
      1.7 eV (donor level) from the conduction band minimum.  However, the upward band 
      bending has been obtained at Al(2)O(3)/SiO(2)/C-H diamond interface indicating 
      the presence of inversion layer without gate voltage. The fixed negative charge 
      model exhibits a strong inversion layer for normally-on FET operation, while the 
      fixed positive charge model shows a weak inversion for normally-off 
      operation.  The maximum current density of a fixed positive interface charge 
      model of the Al(2)O(3)/C-H diamond device is - 290 mA/mm, which corresponds 
      to that of expermental result of Al(2)O(3)/SiO(2)/C-H diamond - 305 mA/mm at a 
      gate-source voltage of - 40 V. Also, the threshold voltage V(th) is relatively 
      high at V(th) = - 3.5 V, i.e., the positive charge model can reproduce the 
      normally-off operation. Moreover, we also demonstrate that the V(th) and 
      transconductance g(m ) correspond to those of the experimental work.
CI  - (c) 2022. The Author(s).
FAU - Alhasani, Reem
AU  - Alhasani R
AD  - Department of Nano Science and NanoEngineering, School of Advanced Science and 
      Engineering, Waseda University, Shinjuku, Tokyo, 169-8555, Japan.
AD  - National Center of Nano Technology and Semiconductor, King Abdulaziz City for 
      Science and Technology, Riyadh, 12354, Saudi Arabia.
FAU - Yabe, Taichi
AU  - Yabe T
AD  - Department of Nano Science and NanoEngineering, School of Advanced Science and 
      Engineering, Waseda University, Shinjuku, Tokyo, 169-8555, Japan.
FAU - Iyama, Yutaro
AU  - Iyama Y
AD  - Department of Nano Science and NanoEngineering, School of Advanced Science and 
      Engineering, Waseda University, Shinjuku, Tokyo, 169-8555, Japan.
FAU - Oi, Nobutaka
AU  - Oi N
AD  - Department of Nano Science and NanoEngineering, School of Advanced Science and 
      Engineering, Waseda University, Shinjuku, Tokyo, 169-8555, Japan.
FAU - Imanishi, Shoichiro
AU  - Imanishi S
AD  - Department of Nano Science and NanoEngineering, School of Advanced Science and 
      Engineering, Waseda University, Shinjuku, Tokyo, 169-8555, Japan.
FAU - Nguyen, Quang Ngoc
AU  - Nguyen QN
AD  - Department of Communications and Computer Engineering, School of Fundamental 
      Science and Engineering, Waseda University, Shinjuku, Tokyo, 169-0051, Japan.
FAU - Kawarada, Hiroshi
AU  - Kawarada H
AD  - Department of Nano Science and NanoEngineering, School of Advanced Science and 
      Engineering, Waseda University, Shinjuku, Tokyo, 169-8555, Japan. 
      kawarada@waseda.jp.
AD  - Kagami Memorial Research Institute for Materials Science and Technology, Waseda 
      University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo, 169-0051, Japan. 
      kawarada@waseda.jp.
AD  - Research Organization for Nano and Life Innovation, Waseda University, 513 
      Waseda-Tsurumaki, Shinjuku, Tokyo, 169-0041, Japan. kawarada@waseda.jp.
LA  - eng
PT  - Journal Article
DEP - 20220310
PL  - England
TA  - Sci Rep
JT  - Scientific reports
JID - 101563288
SB  - IM
PMC - PMC8913839
COIS- The authors declare no competing interests.
EDAT- 2022/03/12 06:00
MHDA- 2022/03/12 06:01
PMCR- 2022/03/10
CRDT- 2022/03/11 05:37
PHST- 2020/12/14 00:00 [received]
PHST- 2021/10/06 00:00 [accepted]
PHST- 2022/03/11 05:37 [entrez]
PHST- 2022/03/12 06:00 [pubmed]
PHST- 2022/03/12 06:01 [medline]
PHST- 2022/03/10 00:00 [pmc-release]
AID - 10.1038/s41598-022-05180-4 [pii]
AID - 5180 [pii]
AID - 10.1038/s41598-022-05180-4 [doi]
PST - epublish
SO  - Sci Rep. 2022 Mar 10;12(1):4203. doi: 10.1038/s41598-022-05180-4.