PMID- 35276685
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220408
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 33
IP  - 26
DP  - 2022 Apr 7
TI  - 1T and 2H heterophase MoS(2)for enhanced sensitivity of GaN transistor-based 
      mercury ions sensor.
LID - 10.1088/1361-6528/ac5cff [doi]
AB  - We report significantly enhanced sensitivity of AlGaN/GaN-based high electron 
      mobility transistor (HEMT) sensor by the targeted synthesis of IT and 2H 
      coexisting phase MoS(2)and applying the gate bias voltage. The HEMT structures on 
      Si (111) substrates were used for the detection of Hg(2+)ions. The optimum 
      sensitive regime in terms ofV(GS)andV(DS)of the sensor was investigated by 
      keeping the drain source voltageV(DS)constant at 2 V and by only varying the gate 
      bias voltageV(GS)from 0 to 3 V. The strongest sensing response obtained from the 
      device was around 0.547 mA ppb(-1)atV(GS) = 3 V, which is 63.7% higher in 
      comparison to the response achieved at 0 V which shows a sensing response of 
      around 0.334 mA ppb(-1). The current response depicts that the fabricated device 
      is very sensitive and selective towards Hg(2+)ions. Moreover, the detection limit 
      of our sensor at 3 V was calculated around 6.21 ppt, which attributes to the 
      strong field created between the gate electrode and the HEMT channel due to the 
      presence of 1T metallic phase in synthesized MoS(2), indicating that the lower 
      detection limits are achievable in adequate strong fields.
CI  - (c) 2022 IOP Publishing Ltd.
FAU - Sharma, Nipun
AU  - Sharma N
AD  - Department of Electrical Engineering, Indian Institute of Technology Jodhpur, 
      Jodhpur-342037, India.
AD  - Department of Mechanical Engineering, Indian Institute of Technology Jodhpur, 
      Jodhpur-342037, India.
FAU - Nigam, Adarsh
AU  - Nigam A
AD  - Department of Electrical Engineering, Indian Institute of Technology Jodhpur, 
      Jodhpur-342037, India.
FAU - Bin Dolmanan, Surani
AU  - Bin Dolmanan S
AD  - IMRE, Institute of Materials Research and Engineering, A*STAR (Agency for 
      Science, Technology and Research), Innovis, 2 Fusionopolisway, 117602, Singapore.
FAU - Gupta, Ankur
AU  - Gupta A
AUID- ORCID: 0000-0001-7855-2145
AD  - Department of Mechanical Engineering, Indian Institute of Technology Jodhpur, 
      Jodhpur-342037, India.
FAU - Tripathy, Sudhiranjan
AU  - Tripathy S
AD  - IMRE, Institute of Materials Research and Engineering, A*STAR (Agency for 
      Science, Technology and Research), Innovis, 2 Fusionopolisway, 117602, Singapore.
FAU - Kumar, Mahesh
AU  - Kumar M
AUID- ORCID: 0000-0002-5357-7300
AD  - Department of Electrical Engineering, Indian Institute of Technology Jodhpur, 
      Jodhpur-342037, India.
LA  - eng
PT  - Journal Article
DEP - 20220407
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
SB  - IM
OTO - NOTNLM
OT  - GaN
OT  - functional materials
OT  - heavy metal ions
OT  - high electron mobility transistors
EDAT- 2022/03/12 06:00
MHDA- 2022/03/12 06:01
CRDT- 2022/03/11 20:17
PHST- 2021/11/06 00:00 [received]
PHST- 2022/03/11 00:00 [accepted]
PHST- 2022/03/12 06:00 [pubmed]
PHST- 2022/03/12 06:01 [medline]
PHST- 2022/03/11 20:17 [entrez]
AID - 10.1088/1361-6528/ac5cff [doi]
PST - epublish
SO  - Nanotechnology. 2022 Apr 7;33(26). doi: 10.1088/1361-6528/ac5cff.