PMID- 35329508
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220328
IS  - 1996-1944 (Print)
IS  - 1996-1944 (Electronic)
IS  - 1996-1944 (Linking)
VI  - 15
IP  - 6
DP  - 2022 Mar 10
TI  - The Effect of Heavy Fe-Doping on 3D Growth Mode and Fe Diffusion in GaN for High 
      Power HEMT Application.
LID - 10.3390/ma15062058 [doi]
LID - 2058
AB  - The high electron mobility transistor (HEMT) structures on Si (111) substrates 
      were fabricated with heavily Fe-doped GaN buffer layers by metalorganic chemical 
      vapor deposition (MOCVD). The heavy Fe concentrations employed for the purpose of 
      highly insulating buffer resulted in Fe segregation and 3D island growth, which 
      played the role of a nano-mask. The in situ reflectance measurements revealed a 
      transition from 2D to 3D growth mode during the growth of a heavily Fe-doped 
      GaN:Fe layer. The 3D growth mode of Fe nano-mask can effectively annihilate 
      edge-type threading dislocations and improve transfer properties in the channel 
      layer, and consequently decrease the vertical leakage current by one order of 
      magnitude for the applied voltage of 1000 V. Moreover, the employment of GaN:C 
      film on GaN:Fe buffer can further reduce the buffer leakage-current and 
      effectively suppress Fe diffusion.
FAU - Dai, Jin-Ji
AU  - Dai JJ
AUID- ORCID: 0000-0002-5006-1851
AD  - Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 
      30010, Taiwan.
AD  - Technology Development Division, Episil-Precision Inc., Hsinchu 30010, Taiwan.
FAU - Mai, Thi Thu
AU  - Mai TT
AD  - Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 
      30010, Taiwan.
FAU - Nallasani, Umeshwar Reddy
AU  - Nallasani UR
AD  - Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 
      30010, Taiwan.
FAU - Chang, Shao-Chien
AU  - Chang SC
AD  - Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 
      30010, Taiwan.
FAU - Hsiao, Hsin-I
AU  - Hsiao HI
AD  - Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 
      30010, Taiwan.
FAU - Wu, Ssu-Kuan
AU  - Wu SK
AD  - Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 
      30010, Taiwan.
FAU - Liu, Cheng-Wei
AU  - Liu CW
AD  - Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 
      30010, Taiwan.
FAU - Wen, Hua-Chiang
AU  - Wen HC
AD  - Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 
      30010, Taiwan.
FAU - Chou, Wu-Ching
AU  - Chou WC
AD  - Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 
      30010, Taiwan.
FAU - Wang, Chieh-Piao
AU  - Wang CP
AD  - Technology Development Division, Episil-Precision Inc., Hsinchu 30010, Taiwan.
FAU - Hoang, Luc Huy
AU  - Hoang LH
AD  - Faculty of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau 
      Giay, Hanoi 10000, Vietnam.
LA  - eng
GR  - MOST 109-2124-M-009-002-MY3/Ministry of Science and Technology, Taiwan/
PT  - Journal Article
DEP - 20220310
PL  - Switzerland
TA  - Materials (Basel)
JT  - Materials (Basel, Switzerland)
JID - 101555929
PMC - PMC8955507
OTO - NOTNLM
OT  - 3D growth
OT  - Fe doping
OT  - GaN power HEMT
OT  - MOCVD
OT  - diffusion
OT  - nano-mask
COIS- The authors declare no conflict of interest.
EDAT- 2022/03/26 06:00
MHDA- 2022/03/26 06:01
PMCR- 2022/03/10
CRDT- 2022/03/25 01:10
PHST- 2022/02/08 00:00 [received]
PHST- 2022/03/03 00:00 [revised]
PHST- 2022/03/08 00:00 [accepted]
PHST- 2022/03/25 01:10 [entrez]
PHST- 2022/03/26 06:00 [pubmed]
PHST- 2022/03/26 06:01 [medline]
PHST- 2022/03/10 00:00 [pmc-release]
AID - ma15062058 [pii]
AID - materials-15-02058 [pii]
AID - 10.3390/ma15062058 [doi]
PST - epublish
SO  - Materials (Basel). 2022 Mar 10;15(6):2058. doi: 10.3390/ma15062058.