PMID- 35334756
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220328
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 13
IP  - 3
DP  - 2022 Mar 18
TI  - A Novel AlGaN/Si(3)N(4) Compound Buffer Layer HEMT with Improved Breakdown 
      Performances.
LID - 10.3390/mi13030464 [doi]
LID - 464
AB  - In this article, an AlGaN and Si(3)N(4) compound buffer layer high electron 
      mobility transistor (HEMT) is proposed and analyzed through TCAD simulations. In 
      the proposed HEMT, the Si(3)N(4) insulating layer is partially buried between the 
      AlGaN buffer layer and AlN nucleating layer, which introduces a high electric 
      field from the vertical field plate into the internal buffer region of the 
      device. The compound buffer layer can significantly increase the breakdown 
      performance without sacrificing any dynamic characteristics and increasing the 
      difficulty in the fabrication process. The significant structural parameters are 
      optimized and analyzed. The simulation results reveal that the proposed HEMT with 
      a 6 mum gate-drain distance shows an OFF-state breakdown voltage (BV) of 881 V and 
      a specific ON-state resistance (R(on,sp)) of 3.27 mOmega.cm(2). When compared with 
      the conventional field plate HEMT and drain connected field plate HEMT, the 
      breakdown voltage could be increased by 148% and 94%, respectively.
FAU - Guo, Jingwei
AU  - Guo J
AUID- ORCID: 0000-0002-2600-577X
AD  - Chongqing Engineering Laboratory of High Performance Integrated Circuits, School 
      of Microelectronics and Communication Engineering, Chongqing University, 
      Chongqing 400044, China.
FAU - Hu, Shengdong
AU  - Hu S
AD  - Chongqing Engineering Laboratory of High Performance Integrated Circuits, School 
      of Microelectronics and Communication Engineering, Chongqing University, 
      Chongqing 400044, China.
FAU - Li, Ping
AU  - Li P
AD  - Chongqing Engineering Laboratory of High Performance Integrated Circuits, School 
      of Microelectronics and Communication Engineering, Chongqing University, 
      Chongqing 400044, China.
AD  - China Resources Microelectronics (Chongqing) Limited, Chongqing 401332, China.
FAU - Jiang, Jie
AU  - Jiang J
AD  - Chongqing Engineering Laboratory of High Performance Integrated Circuits, School 
      of Microelectronics and Communication Engineering, Chongqing University, 
      Chongqing 400044, China.
FAU - Wang, Ruoyu
AU  - Wang R
AD  - Chongqing Engineering Laboratory of High Performance Integrated Circuits, School 
      of Microelectronics and Communication Engineering, Chongqing University, 
      Chongqing 400044, China.
FAU - Wang, Yuan
AU  - Wang Y
AD  - Chongqing Engineering Laboratory of High Performance Integrated Circuits, School 
      of Microelectronics and Communication Engineering, Chongqing University, 
      Chongqing 400044, China.
FAU - Wu, Hao
AU  - Wu H
AD  - Chongqing Engineering Laboratory of High Performance Integrated Circuits, School 
      of Microelectronics and Communication Engineering, Chongqing University, 
      Chongqing 400044, China.
LA  - eng
GR  - 62174017/National Natural Science Foundation of China/
GR  - cstc2020jcyj-msxmX0243/Natural Science Foundation Project of CQ CSTC/
GR  - 2020CDJ-LHZZ-024/Fundamental Research Funds for the Central Universities/
PT  - Journal Article
DEP - 20220318
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC8949781
OTO - NOTNLM
OT  - AlGaN/GaN HEMT
OT  - breakdown voltage
OT  - buffer layer
OT  - electric field
COIS- The authors declare no conflict of interest.
EDAT- 2022/03/27 06:00
MHDA- 2022/03/27 06:01
PMCR- 2022/03/18
CRDT- 2022/03/26 01:01
PHST- 2022/02/12 00:00 [received]
PHST- 2022/03/10 00:00 [revised]
PHST- 2022/03/14 00:00 [accepted]
PHST- 2022/03/26 01:01 [entrez]
PHST- 2022/03/27 06:00 [pubmed]
PHST- 2022/03/27 06:01 [medline]
PHST- 2022/03/18 00:00 [pmc-release]
AID - mi13030464 [pii]
AID - micromachines-13-00464 [pii]
AID - 10.3390/mi13030464 [doi]
PST - epublish
SO  - Micromachines (Basel). 2022 Mar 18;13(3):464. doi: 10.3390/mi13030464.