PMID- 35423215 OWN - NLM STAT- PubMed-not-MEDLINE LR - 20220416 IS - 2046-2069 (Electronic) IS - 2046-2069 (Linking) VI - 11 IP - 12 DP - 2021 Feb 4 TI - Gate-bias instability of few-layer WSe(2) field effect transistors. PG - 6818-6824 LID - 10.1039/d0ra09376a [doi] AB - Semiconducting two-dimensional (2D) layered materials have shown great potential in next-generation electronics due to their novel electronic properties. However, the performance of field effect transistors (FETs) based on 2D materials is always environment-dependent and unstable under gate bias stress. Here, we report the environment-dependent performance and gate-induced instability of few-layer p-type WSe(2)-based FETs. We found that the hole mobility of the transistor drastically reduces in vacuum and further decreases after in situ annealing in vacuum compared with that in air, which can be recovered after exposure to air. The on-current of the WSe(2) FET increases with positive gate bias stress time but decreases with negative gate bias stress time. For the double sweeping transfer curve, the transistor shows prominent hysteresis, which depends on both the sweeping rate and the sweeping range. Large hysteresis can be observed when a slow sweeping rate or large sweeping range is applied. In addition, such gate-induced instability can be reduced in vacuum and further reduced after in situ vacuum annealing. However, the gate-induced instability cannot be fully eliminated, which suggests both gases adsorbed on the device and defects in the WSe(2) channel and/or the interface of WSe(2)/SiO(2) are responsible for the gate-induced instability. Our results provide a deep understanding of the gate-induced instability in p-type WSe(2) based transistors, which may shed light on the design of high-performance 2D material-based electronics. CI - This journal is (c) The Royal Society of Chemistry. FAU - Wen, Shaofeng AU - Wen S AD - State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China Chengdu 610054 China cylan@uestc.edu.cn lichun@uestc.edu.cn. AD - School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China Chengdu 610054 China. FAU - Lan, Changyong AU - Lan C AUID- ORCID: 0000-0002-5654-1098 AD - State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China Chengdu 610054 China cylan@uestc.edu.cn lichun@uestc.edu.cn. AD - School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China Chengdu 610054 China. FAU - Li, Chun AU - Li C AUID- ORCID: 0000-0002-8190-9843 AD - State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China Chengdu 610054 China cylan@uestc.edu.cn lichun@uestc.edu.cn. AD - School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China Chengdu 610054 China. AD - Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology Wuhan 430074 China. FAU - Zhou, Sihan AU - Zhou S AD - State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China Chengdu 610054 China cylan@uestc.edu.cn lichun@uestc.edu.cn. AD - School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China Chengdu 610054 China. FAU - He, Tianying AU - He T AD - State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China Chengdu 610054 China cylan@uestc.edu.cn lichun@uestc.edu.cn. AD - School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China Chengdu 610054 China. FAU - Zhang, Rui AU - Zhang R AD - State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China Chengdu 610054 China cylan@uestc.edu.cn lichun@uestc.edu.cn. AD - School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China Chengdu 610054 China. FAU - Zou, Ruisen AU - Zou R AD - State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China Chengdu 610054 China cylan@uestc.edu.cn lichun@uestc.edu.cn. AD - School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China Chengdu 610054 China. FAU - Hu, Hao AU - Hu H AD - State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China Chengdu 610054 China cylan@uestc.edu.cn lichun@uestc.edu.cn. AD - School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China Chengdu 610054 China. FAU - Yin, Yi AU - Yin Y AUID- ORCID: 0000-0001-7836-1330 AD - State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China Chengdu 610054 China cylan@uestc.edu.cn lichun@uestc.edu.cn. AD - School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China Chengdu 610054 China. FAU - Liu, Yong AU - Liu Y AD - State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China Chengdu 610054 China cylan@uestc.edu.cn lichun@uestc.edu.cn. AD - School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China Chengdu 610054 China. LA - eng PT - Journal Article DEP - 20210210 PL - England TA - RSC Adv JT - RSC advances JID - 101581657 PMC - PMC8694931 COIS- There are no conflicts to declare. EDAT- 2021/02/10 00:00 MHDA- 2021/02/10 00:01 PMCR- 2021/02/10 CRDT- 2022/04/15 05:25 PHST- 2020/11/04 00:00 [received] PHST- 2021/02/03 00:00 [accepted] PHST- 2022/04/15 05:25 [entrez] PHST- 2021/02/10 00:00 [pubmed] PHST- 2021/02/10 00:01 [medline] PHST- 2021/02/10 00:00 [pmc-release] AID - d0ra09376a [pii] AID - 10.1039/d0ra09376a [doi] PST - epublish SO - RSC Adv. 2021 Feb 10;11(12):6818-6824. doi: 10.1039/d0ra09376a. eCollection 2021 Feb 4.