PMID- 35442622
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220505
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 14
IP  - 17
DP  - 2022 May 4
TI  - Performance Enhancement of SnS/h-BN Heterostructure p-Type FET via the 
      Thermodynamically Predicted Surface Oxide Conversion Method.
PG  - 19928-19937
LID - 10.1021/acsami.2c05534 [doi]
AB  - Searching for the counterpart of well-developed two-dimensional (2D) n-type field 
      effect transistors (FETs) is indispensable for complementary logic circuit 
      applications for 2D devices. Although SnS is regarded as a potential candidate 
      for high-performance p-type FETs, recent experiments only show poor results 
      deviating from the theoretically predicted high mobility. In this research, the 
      serious performance degradation due to the surface oxidation of SnS, which 
      commonly occurs in most 2D materials, is addressed through surface oxide 
      conversion using highly reactive Ti. In this conversion process, which is 
      confirmed by systematic characterization, the reduction of SnS surface oxide is 
      accompanied by the formation of functional titanium oxide, which works as both a 
      conductive intermediate layer to improve the contact property and a buffer layer 
      of the high-k top gate insulator at the channel region. Consequently, a 
      record-high field effect mobility of 87.4 cm(2) V(-1) s(-1) in SnS p-type FETs is 
      achieved. The surface oxide conversion method applied here is consistent with our 
      previous thermodynamic prediction, and this novel technique can be widely 
      introduced to all 2D materials that are vulnerable to oxidation and facilitate 
      the future development of 2D devices.
FAU - Chang, Yih-Ren
AU  - Chang YR
AD  - Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, 
      Bunkyo, Tokyo 113-8656, Japan.
FAU - Nishimura, Tomonori
AU  - Nishimura T
AD  - Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, 
      Bunkyo, Tokyo 113-8656, Japan.
FAU - Taniguchi, Takashi
AU  - Taniguchi T
AUID- ORCID: 0000-0002-1467-3105
AD  - International Center for Materials Nanoarchitectonics, National Institute of 
      Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
FAU - Watanabe, Kenji
AU  - Watanabe K
AUID- ORCID: 0000-0003-3701-8119
AD  - Research Center for Functional Materials, National Institute of Materials 
      Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
FAU - Nagashio, Kosuke
AU  - Nagashio K
AUID- ORCID: 0000-0003-1181-8644
AD  - Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, 
      Bunkyo, Tokyo 113-8656, Japan.
LA  - eng
PT  - Journal Article
DEP - 20220420
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
SB  - IM
OTO - NOTNLM
OT  - 2D materials
OT  - SnS
OT  - h-BN
OT  - oxide reduction
OT  - p-FET
EDAT- 2022/04/21 06:00
MHDA- 2022/04/21 06:01
CRDT- 2022/04/20 17:11
PHST- 2022/04/21 06:00 [pubmed]
PHST- 2022/04/21 06:01 [medline]
PHST- 2022/04/20 17:11 [entrez]
AID - 10.1021/acsami.2c05534 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2022 May 4;14(17):19928-19937. doi: 
      10.1021/acsami.2c05534. Epub 2022 Apr 20.