PMID- 35495354
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220503
IS  - 2046-2069 (Electronic)
IS  - 2046-2069 (Linking)
VI  - 10
IP  - 19
DP  - 2020 Mar 16
TI  - An effective hydroxylation route for a highly sensitive glucose sensor using 
      APTES/GOx functionalized AlGaN/GaN high electron mobility transistor.
PG  - 11393-11399
LID - 10.1039/c9ra09446f [doi]
AB  - A highly sensitive glucose sensor based on AlGaN/GaN high electron mobility 
      transistor (HEMT) has been fabricated. The hydroxyl groups on the GaN surface 
      were achieved by the decomposition of hydrogen peroxide solution (H(2)O(2)) under 
      UV irradiation for the production of hydroxyl radicals. The self-assembled 
      monolayers (SAMs) of 3-aminopropyltriethoxysilane (APTES) with terminal amino 
      groups formed on the hydroxylation surface were used as substrates for glucose 
      oxidase (GOx) immobilization. The chemical groups on the GaN surface after 
      hydroxylation were confirmed by X-ray photoelectron spectroscopy. From the 
      analysis of current signals, the biosensor constructed with APTES/GOx exhibited 
      good current response to glucose over a linear range from 10 to 100 microM with a 
      sensitivity of 3.15 x 10(4) microA mM(-1) cm(-2) and a detection limit of 10 nM. 
      Meanwhile, the anticipated idea about the hydroxylation of GaN surface, can be an 
      efficient approach for the design of AlGaN/GaN HEMT based biosensors in the 
      future.
CI  - This journal is (c) The Royal Society of Chemistry.
FAU - Liu, Jun
AU  - Liu J
AD  - School of Microelectronics, Dalian University of Technology Dalian P. R. China 
      116024 hqzhang@dlut.edu.cn hwliang@dlut.edu.cn.
FAU - Zhang, Heqiu
AU  - Zhang H
AUID- ORCID: 0000-0002-5155-6215
AD  - School of Microelectronics, Dalian University of Technology Dalian P. R. China 
      116024 hqzhang@dlut.edu.cn hwliang@dlut.edu.cn.
FAU - Xue, Dongyang
AU  - Xue D
AD  - School of Microelectronics, Dalian University of Technology Dalian P. R. China 
      116024 hqzhang@dlut.edu.cn hwliang@dlut.edu.cn.
FAU - Ahmad, Aqrab Ul
AU  - Ahmad AU
AD  - School of Microelectronics, Dalian University of Technology Dalian P. R. China 
      116024 hqzhang@dlut.edu.cn hwliang@dlut.edu.cn.
FAU - Xia, Xiaochuan
AU  - Xia X
AD  - School of Microelectronics, Dalian University of Technology Dalian P. R. China 
      116024 hqzhang@dlut.edu.cn hwliang@dlut.edu.cn.
FAU - Liu, Yang
AU  - Liu Y
AD  - School of Microelectronics, Dalian University of Technology Dalian P. R. China 
      116024 hqzhang@dlut.edu.cn hwliang@dlut.edu.cn.
FAU - Huang, Huishi
AU  - Huang H
AD  - Jiangsu Xinguanglian Technology Co., Ltd Wuxi Jiangsu P. R. China 214192.
FAU - Guo, Wenping
AU  - Guo W
AD  - Shandong Novoshine Co., Ltd Weifang Shandong P. R. China 261000.
FAU - Liang, Hongwei
AU  - Liang H
AUID- ORCID: 0000-0002-8231-2790
AD  - School of Microelectronics, Dalian University of Technology Dalian P. R. China 
      116024 hqzhang@dlut.edu.cn hwliang@dlut.edu.cn.
LA  - eng
PT  - Journal Article
DEP - 20200318
PL  - England
TA  - RSC Adv
JT  - RSC advances
JID - 101581657
PMC - PMC9050454
COIS- There are no conflicts to declare.
EDAT- 2020/03/18 00:00
MHDA- 2020/03/18 00:01
PMCR- 2020/03/18
CRDT- 2022/05/02 06:39
PHST- 2019/11/13 00:00 [received]
PHST- 2020/03/05 00:00 [accepted]
PHST- 2022/05/02 06:39 [entrez]
PHST- 2020/03/18 00:00 [pubmed]
PHST- 2020/03/18 00:01 [medline]
PHST- 2020/03/18 00:00 [pmc-release]
AID - c9ra09446f [pii]
AID - 10.1039/c9ra09446f [doi]
PST - epublish
SO  - RSC Adv. 2020 Mar 18;10(19):11393-11399. doi: 10.1039/c9ra09446f. eCollection 
      2020 Mar 16.