PMID- 35514841
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220507
IS  - 2046-2069 (Electronic)
IS  - 2046-2069 (Linking)
VI  - 9
IP  - 27
DP  - 2019 May 14
TI  - Nanostructured bulk Si for thermoelectrics synthesized by surface 
      diffusion/sintering doping.
PG  - 15496-15501
LID - 10.1039/c9ra02349f [doi]
AB  - Nanostructured bulk silicon (bulk nano-Si) has attracted attention as an advanced 
      thermoelectric (TE) material due to its abundance and low toxicity. However, 
      oxidization will occur easily when bulk nano-Si is synthesized by a conventional 
      method, which deteriorates the TE performance. Various methods to prevent such 
      oxidation have been proposed but they need specific techniques and are thus 
      expensive. Here, we propose a simple and cost-effective method named Surface 
      Diffusion/Sintering Doping (SDSD) to synthesize bulk nano-Si for TEs. SDSD 
      utilizes Si nanoparticles whose surface is coated with a native thin oxide layer. 
      SDSD is composed of two steps, (1) a molecular precursor containing a doping 
      element is added onto the oxide layer of Si nanoparticles and (2) the 
      nanoparticles are sintered into a bulk state. During sintering, the doping 
      element diffuses through the oxide layer forming conductive paths, which results 
      in a high carrier concentration as well as high mobility. Furthermore, owing to 
      the nanostructures, low lattice thermal conductivity (kappa (lat)) is also achieved, 
      which is an ideal situation for TEs. In this study, we show that P-doped bulk 
      nano-Si synthesized by SDSD shows good TE performance due to its high carrier 
      concentration, high carrier mobility, and low kappa (lat). Since SDSD takes advantage 
      of oxidization, it is cost-effective and suitable for mass production to 
      synthesize bulk nano-Si for TEs.
CI  - This journal is (c) The Royal Society of Chemistry.
FAU - Tanusilp, Sora-At
AU  - Tanusilp SA
AD  - Graduate School of Engineering, Osaka University 2-1 Yamadaoka, Suita Osaka 
      565-0871 Japan.
FAU - Sadayori, Naoki
AU  - Sadayori N
AD  - Nitto Denko Corporation 1-1-2 Shimohozumi, Ibaraki Osaka 567-8680 Japan 
      naoki.sadayori@nitto.com.
FAU - Kurosaki, Ken
AU  - Kurosaki K
AUID- ORCID: 0000-0002-3015-3206
AD  - Graduate School of Engineering, Osaka University 2-1 Yamadaoka, Suita Osaka 
      565-0871 Japan.
AD  - Research Institute of Nuclear Engineering, University of Fukui 1-3-33 Kanawa-cho, 
      Tsuruga Fukui 914-0055 Japan.
AD  - JST, PRESTO 4-1-8 Honcho, Kawaguchi Saitama 332-0012 Japan.
AD  - Institute for Integrated Radiation and Nuclear Science, Kyoto University 2, 
      Asashiro-Nishi, Kumatori-cho, Sennan-gun Osaka 590-0494 Japan 
      kurosaki.ken.6n@kyoto-u.ac.jp.
LA  - eng
PT  - Journal Article
DEP - 20190517
PL  - England
TA  - RSC Adv
JT  - RSC advances
JID - 101581657
PMC - PMC9064277
COIS- The authors declare no competing financial interest.
EDAT- 2019/05/17 00:00
MHDA- 2019/05/17 00:01
PMCR- 2019/05/17
CRDT- 2022/05/06 05:30
PHST- 2019/03/28 00:00 [received]
PHST- 2019/05/10 00:00 [accepted]
PHST- 2022/05/06 05:30 [entrez]
PHST- 2019/05/17 00:00 [pubmed]
PHST- 2019/05/17 00:01 [medline]
PHST- 2019/05/17 00:00 [pmc-release]
AID - c9ra02349f [pii]
AID - 10.1039/c9ra02349f [doi]
PST - epublish
SO  - RSC Adv. 2019 May 17;9(27):15496-15501. doi: 10.1039/c9ra02349f. eCollection 2019 
      May 14.