PMID- 35539659
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220512
IS  - 2046-2069 (Electronic)
IS  - 2046-2069 (Linking)
VI  - 8
IP  - 34
DP  - 2018 May 22
TI  - Enhanced efficiency of Cu(2)ZnSn(S,Se)(4) solar cells via anti-reflectance 
      properties and surface passivation by atomic layer deposited aluminum oxide.
PG  - 19213-19219
LID - 10.1039/c8ra03437k [doi]
AB  - Reducing interface recombination losses is one of the major challenges in 
      developing Cu(2)ZnSn(S,Se)(4) (CZTSSe) solar cells. Here, we propose a CZTSSe 
      solar cell with an atomic layer deposited Al(2)O(3) thin film for surface 
      passivation. The influence of passivation layer thickness on the power conversion 
      efficiency (PCE), short-circuit current density (J (sc)), open-circuit voltage (V 
      (oc)) and fill factor (FF) of the solar cell is systematically investigated. It 
      is found that the Al(2)O(3) film presents notable antireflection (AR) properties 
      over a broad range of wavelengths (350-1000 nm) for CZTSSe solar cells. With 
      increasing Al(2)O(3) thickness (1-10 nm), the average reflectance of the CZTSSe 
      film decreases from 12.9% to 9.6%, compared with the average reflectance of 13.6% 
      for the CZTSSe film without Al(2)O(3). The Al(2)O(3) passivation layer also 
      contributes to suppressed surface recombination and enhanced carrier separation. 
      Passivation performance is related to chemical and field effect passivation, 
      which is due to released H atoms from the Al-OH bonds and the formation of Al 
      vacancies and O interstitials within Al(2)O(3) films. Therefore, the J (sc) and V 
      (oc) of the CZTSSe solar cell with 2 nm-Al(2)O(3) were increased by 37.8% and 
      57.8%, respectively, in comparison with those of the unpassivated sample. An 
      optimal CZTSSe solar cell was obtained with a V (oc), J (sc) and eta of 0.361 V, 
      33.78 mA and 5.66%. Our results indicate that Al(2)O(3) films show the dual 
      functions of AR and surface passivation for photovoltaic applications.
CI  - This journal is (c) The Royal Society of Chemistry.
FAU - Zhang, Bingye
AU  - Zhang B
AUID- ORCID: 0000-0002-2368-9758
AD  - Department of Physics, Dalian University of Technology Dalian Liaoning 116023 P. 
      R. China byzhang@dlut.edu.cn.
FAU - Han, Lu
AU  - Han L
AD  - Department of Physics, Dalian University of Technology Dalian Liaoning 116023 P. 
      R. China byzhang@dlut.edu.cn.
FAU - Ying, Shitian
AU  - Ying S
AD  - Department of Physics, Dalian University of Technology Dalian Liaoning 116023 P. 
      R. China byzhang@dlut.edu.cn.
FAU - Li, Yongfeng
AU  - Li Y
AD  - Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of 
      Education), College of Physics, Jilin University Changchun 130012 China 
      binyao@jlu.edu.cn.
FAU - Yao, Bin
AU  - Yao B
AD  - Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of 
      Education), College of Physics, Jilin University Changchun 130012 China 
      binyao@jlu.edu.cn.
LA  - eng
PT  - Journal Article
DEP - 20180524
PL  - England
TA  - RSC Adv
JT  - RSC advances
JID - 101581657
PMC - PMC9080692
COIS- There are no conflicts to declare.
EDAT- 2018/05/24 00:00
MHDA- 2018/05/24 00:01
PMCR- 2018/05/24
CRDT- 2022/05/11 03:49
PHST- 2018/04/21 00:00 [received]
PHST- 2018/05/15 00:00 [accepted]
PHST- 2022/05/11 03:49 [entrez]
PHST- 2018/05/24 00:00 [pubmed]
PHST- 2018/05/24 00:01 [medline]
PHST- 2018/05/24 00:00 [pmc-release]
AID - c8ra03437k [pii]
AID - 10.1039/c8ra03437k [doi]
PST - epublish
SO  - RSC Adv. 2018 May 24;8(34):19213-19219. doi: 10.1039/c8ra03437k. eCollection 2018 
      May 22.