PMID- 35539784
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220512
IS  - 2046-2069 (Electronic)
IS  - 2046-2069 (Linking)
VI  - 8
IP  - 45
DP  - 2018 Jul 16
TI  - A vertical WSe(2)-MoSe(2) p-n heterostructure with tunable gate rectification.
PG  - 25514-25518
LID - 10.1039/c8ra03398f [doi]
AB  - Here, we report the synthesis of a vertical MoSe(2)/WSe(2) p-n heterostructure 
      using a sputtering-CVD method. Unlike the conventional CVD method, this method 
      produced a continuous MoSe(2)/WSe(2) p-n heterostructure. WSe(2) and MoSe(2) 
      back-gated field effect transistors (FETs) exhibited good gate modulation 
      behavior, and high hole and electron mobilities of  approximately 2.2 and  approximately 15.1 cm(2) V(-1) 
      s(-1), respectively. The fabricated vertical MoSe(2)/WSe(2) p-n diode showed 
      rectifying I-V behavior with back-gate tunability. The rectification ratio of the 
      diode was increased with increasing gate voltage, and was increased from  approximately 18 to 
       approximately 1600 as the gate bias increased from -40 V to +40 V. This is attributed to the 
      fact that the barrier height between p-WSe(2) and n-MoSe(2) is modulated due to 
      the back-gate bias. The rectification ratio is higher than the previously 
      reported values for the TMDC p-n heterostructure grown by CVD.
CI  - This journal is (c) The Royal Society of Chemistry.
FAU - Liu, Hailing
AU  - Liu H
AUID- ORCID: 0000-0001-6070-2897
AD  - Graphene Research Institute, Sejong University Seoul 143-747 Republic of Korea 
      jwjung@sejong.ac.kr.
AD  - Institute of Nano and Advanced Materials Engineering, Sejong University Seoul 
      143-747 Republic of Korea.
FAU - Hussain, Sajjad
AU  - Hussain S
AD  - Graphene Research Institute, Sejong University Seoul 143-747 Republic of Korea 
      jwjung@sejong.ac.kr.
AD  - Institute of Nano and Advanced Materials Engineering, Sejong University Seoul 
      143-747 Republic of Korea.
FAU - Ali, Asif
AU  - Ali A
AD  - Graphene Research Institute, Sejong University Seoul 143-747 Republic of Korea 
      jwjung@sejong.ac.kr.
AD  - Institute of Nano and Advanced Materials Engineering, Sejong University Seoul 
      143-747 Republic of Korea.
FAU - Naqvi, Bilal Abbas
AU  - Naqvi BA
AD  - Graphene Research Institute, Sejong University Seoul 143-747 Republic of Korea 
      jwjung@sejong.ac.kr.
AD  - Institute of Nano and Advanced Materials Engineering, Sejong University Seoul 
      143-747 Republic of Korea.
FAU - Vikraman, Dhanasekaran
AU  - Vikraman D
AUID- ORCID: 0000-0001-8991-3604
AD  - Division of Electronics and Electrical Engineering, Dongguk University-Seoul 
      Seoul 04620 Republic of Korea.
FAU - Jeong, Woonyoung
AU  - Jeong W
AD  - Graphene Research Institute, Sejong University Seoul 143-747 Republic of Korea 
      jwjung@sejong.ac.kr.
AD  - Institute of Nano and Advanced Materials Engineering, Sejong University Seoul 
      143-747 Republic of Korea.
FAU - Song, Wooseok
AU  - Song W
AUID- ORCID: 0000-0002-0487-2055
AD  - Thin Film Materials Research Center, Korea Research Institute of Chemical 
      Technology Daejon 305-600 Korea.
FAU - An, Ki-Seok
AU  - An KS
AUID- ORCID: 0000-0003-2463-0982
AD  - Thin Film Materials Research Center, Korea Research Institute of Chemical 
      Technology Daejon 305-600 Korea.
FAU - Jung, Jongwan
AU  - Jung J
AUID- ORCID: 0000-0002-1397-212X
AD  - Graphene Research Institute, Sejong University Seoul 143-747 Republic of Korea 
      jwjung@sejong.ac.kr.
AD  - Institute of Nano and Advanced Materials Engineering, Sejong University Seoul 
      143-747 Republic of Korea.
LA  - eng
PT  - Journal Article
DEP - 20180717
PL  - England
TA  - RSC Adv
JT  - RSC advances
JID - 101581657
EIN - RSC Adv. 2018 Aug 13;8(50):28692. PMID: 35544028
PMC - PMC9082623
COIS- There are no conflicts to declare.
EDAT- 2018/07/17 00:00
MHDA- 2018/07/17 00:01
PMCR- 2018/07/17
CRDT- 2022/05/11 03:50
PHST- 2018/04/20 00:00 [received]
PHST- 2018/08/13 00:00 [revised]
PHST- 2018/07/04 00:00 [accepted]
PHST- 2022/05/11 03:50 [entrez]
PHST- 2018/07/17 00:00 [pubmed]
PHST- 2018/07/17 00:01 [medline]
PHST- 2018/07/17 00:00 [pmc-release]
AID - c8ra03398f [pii]
AID - 10.1039/c8ra03398f [doi]
PST - epublish
SO  - RSC Adv. 2018 Jul 17;8(45):25514-25518. doi: 10.1039/c8ra03398f. eCollection 2018 
      Jul 16.