PMID- 35619163
OWN - NLM
STAT- MEDLINE
DCOM- 20220728
LR  - 20220728
IS  - 1521-4095 (Electronic)
IS  - 0935-9648 (Linking)
VI  - 34
IP  - 30
DP  - 2022 Jul
TI  - Polarity-Differentiated Dielectric Materials in Monolayer Graphene 
      Charge-Regulated Field-Effect Transistors for an Artificial Reflex Arc and 
      Pain-Modulation System of the Spinal Cord.
PG  - e2202059
LID - 10.1002/adma.202202059 [doi]
AB  - The nervous system is a vital part of organisms to survive and it endows them 
      with remarkable abilities, such as perception, recognition, regulation, learning, 
      and decision-making, by intertwining myriad neurons. To realize such outstanding 
      efficacies and functions, many artificial devices and systems have been 
      investigated to emulate the operating principles of the nervous system. Here, an 
      artificial reflex arc (ARA) and artificial pain modulation system (APMS) are 
      proposed to imitate the unconscious behaviors of the spinal cord. Gd(x) O(y) - 
      and Al(x) O(y) -based charge-regulated field-effect transistors (CRFETs) with a 
      monolayer graphene channel are fabricated and adopted as inhibitory and 
      excitatory synapses, respectively, under the same pulse signals to mimic the 
      biological reflex arc through a connection with a poly(vinylidene 
      fluoride-co-trifluoroethylene)-based actuator. Additionally, a memristor is 
      integrated with a CRFET as the interneuron to regulate the Dirac point by 
      controlling the voltage drop on the graphene channel, analogous to the descending 
      pain-inhibition system in the spinal cord, to prevent excessive pain perception. 
      The proposed ARA and APMS provide a significant step forward to realizing the 
      functions of the nervous system, giving promising potential for developing future 
      intelligent alarm systems, neuroprosthetics, and neurorobotics.
CI  - (c) 2022 Wiley-VCH GmbH.
FAU - Fu, Yi
AU  - Fu Y
AD  - Department of Electronic Engineering, Chang Gung University, Guishan Dist, 
      Taoyuan, 33302, Taiwan.
FAU - Chan, Ya-Ting
AU  - Chan YT
AD  - Department of Electronic Engineering, Chang Gung University, Guishan Dist, 
      Taoyuan, 33302, Taiwan.
FAU - Jiang, Yi-Pei
AU  - Jiang YP
AD  - Department of Electronic Engineering, Chang Gung University, Guishan Dist, 
      Taoyuan, 33302, Taiwan.
FAU - Chang, Kuo-Hsuan
AU  - Chang KH
AD  - Department of Neurology, Chang Gung Memorial Hospital, Linkou, Guishan Dist, 
      Taoyuan, 33305, Taiwan.
AD  - College of Medicine, Chang Gung University, Guishan Dist, Taoyuan, 33302, Taiwan.
FAU - Wu, Hsiu-Chuan
AU  - Wu HC
AD  - Department of Neurology, Chang Gung Memorial Hospital, Linkou, Guishan Dist, 
      Taoyuan, 33305, Taiwan.
AD  - College of Medicine, Chang Gung University, Guishan Dist, Taoyuan, 33302, Taiwan.
FAU - Lai, Chao-Sung
AU  - Lai CS
AD  - Department of Electronic Engineering, Chang Gung University, Guishan Dist, 
      Taoyuan, 33302, Taiwan.
AD  - Green Technology Research Center, Chang Gung University, Guishan Dist, Taoyuan, 
      33302, Taiwan.
AD  - Department of Nephrology, Chang Gung Memorial Hospital, Linkou, Guishan Dist, 
      Taoyuan, 33305, Taiwan.
AD  - Department of Materials Engineering, Ming Chi University of Technology, Taishan 
      Dist, New Taipei City, 243303, Taiwan.
FAU - Wang, Jer-Chyi
AU  - Wang JC
AUID- ORCID: 0000-0002-1308-3197
AD  - Department of Electronic Engineering, Chang Gung University, Guishan Dist, 
      Taoyuan, 33302, Taiwan.
AD  - Green Technology Research Center, Chang Gung University, Guishan Dist, Taoyuan, 
      33302, Taiwan.
AD  - Department of Neurosurgery, Chang Gung Memorial Hospital, Linkou, Guishan Dist, 
      Taoyuan, 33305, Taiwan.
AD  - Department of Electronic Engineering, Ming Chi University of Technology, Taishan 
      Dist, New Taipei City, 243303, Taiwan.
LA  - eng
GR  - MOST103-2221-E-182-061-MY3/Ministry of Science and Technology, R.O.C./
GR  - MOST109-2221-E-182-032/Ministry of Science and Technology, R.O.C./
GR  - MOST110-2221-E-182-058/Ministry of Science and Technology, R.O.C./
GR  - MOST110-2119-M-492-002-MBK/Ministry of Science and Technology, R.O.C./
GR  - MOST110-2622-8-182-001-TS1/Ministry of Science and Technology, R.O.C./
GR  - CMRPD2H0133/Chang Gung Memorial Hospital/
GR  - CMRPD2J0052/Chang Gung Memorial Hospital/
GR  - CMRPD2J0053/Chang Gung Memorial Hospital/
GR  - BMRPA74/Chang Gung Memorial Hospital/
PT  - Journal Article
DEP - 20220617
PL  - Germany
TA  - Adv Mater
JT  - Advanced materials (Deerfield Beach, Fla.)
JID - 9885358
RN  - 7782-42-5 (Graphite)
SB  - IM
MH  - *Graphite
MH  - Humans
MH  - Neurons
MH  - Pain
MH  - Reflex/physiology
MH  - Spinal Cord/physiology
OTO - NOTNLM
OT  - charge-regulated field-effect-transistors
OT  - nervous system
OT  - pain modulation systems
OT  - reflex arc
OT  - spinal cord
EDAT- 2022/05/27 06:00
MHDA- 2022/07/29 06:00
CRDT- 2022/05/26 23:49
PHST- 2022/04/28 00:00 [revised]
PHST- 2022/03/04 00:00 [received]
PHST- 2022/05/27 06:00 [pubmed]
PHST- 2022/07/29 06:00 [medline]
PHST- 2022/05/26 23:49 [entrez]
AID - 10.1002/adma.202202059 [doi]
PST - ppublish
SO  - Adv Mater. 2022 Jul;34(30):e2202059. doi: 10.1002/adma.202202059. Epub 2022 Jun 
      17.