PMID- 35630215
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220716
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 13
IP  - 5
DP  - 2022 May 9
TI  - Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor 
      Traps in AlGaN/GaN Lateral Schottky Barrier Diode.
LID - 10.3390/mi13050748 [doi]
LID - 748
AB  - In this study, a dedicated dynamic measurement system was used to investigate the 
      transient capacitance and recovery process of AlGaN/GaN lateral Schottky barrier 
      diodes (SBDs). With the consideration of acceptor traps in the C-doped buffer, 
      the C-V characteristics and transient capacitance were measured and analyzed, and 
      the results were simulated and explained by Silvaco TCAD (technology computer 
      aided design). The ionization of acceptor traps and the change of electric 
      potential were monitored in transient simulation to investigate the origin of the 
      capacitance collapse in the SBD. The results suggest the significant impact of 
      traps in the GaN buffer layer on the capacitance collapse of the device, and the 
      secondary capture effect on the variation of acceptor ionization. Based on the 
      study of transient capacitance of SBD, this work could be extended to the Miller 
      capacitance in high electron mobility transistor (HEMT) devices. Moreover, the 
      report on the stability of capacitance is essential for GaN devices, and could be 
      further extended to other aspects of device research.
FAU - Zhang, Haitao
AU  - Zhang H
AUID- ORCID: 0000-0002-6940-7031
AD  - High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of 
      Microelectronics of Chinese Academy of Sciences, Beijing 100029, China.
AD  - School of Electronic Electrical and Communication Engineering, University of 
      Chinese Academy of Sciences, Beijing 100049, China.
FAU - Kang, Xuanwu
AU  - Kang X
AUID- ORCID: 0000-0003-0607-2948
AD  - High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of 
      Microelectronics of Chinese Academy of Sciences, Beijing 100029, China.
FAU - Zheng, Yingkui
AU  - Zheng Y
AD  - High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of 
      Microelectronics of Chinese Academy of Sciences, Beijing 100029, China.
FAU - Wei, Ke
AU  - Wei K
AD  - High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of 
      Microelectronics of Chinese Academy of Sciences, Beijing 100029, China.
FAU - Wu, Hao
AU  - Wu H
AD  - High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of 
      Microelectronics of Chinese Academy of Sciences, Beijing 100029, China.
AD  - The Institute of Future Lighting, Academy for Engineering and Technology, Fudan 
      University (FAET), Shanghai 200433, China.
FAU - Liu, Xinyu
AU  - Liu X
AD  - High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of 
      Microelectronics of Chinese Academy of Sciences, Beijing 100029, China.
FAU - Ye, Tianchun
AU  - Ye T
AD  - High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of 
      Microelectronics of Chinese Academy of Sciences, Beijing 100029, China.
FAU - Jin, Zhi
AU  - Jin Z
AD  - High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of 
      Microelectronics of Chinese Academy of Sciences, Beijing 100029, China.
LA  - eng
GR  - 61804172/National Natural Science Foundation of China/
GR  - 2019B010128001/Key-Area Research and Development Program of the GuangDong 
      Province/
PT  - Journal Article
DEP - 20220509
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC9147414
OTO - NOTNLM
OT  - GaN
OT  - SBD
OT  - Schottky barrier diode
OT  - acceptor trap
OT  - capacitance collapse
OT  - depletion
OT  - potential
OT  - secondary capture
OT  - simulation
COIS- The authors declare no conflict of interest.
EDAT- 2022/05/29 06:00
MHDA- 2022/05/29 06:01
PMCR- 2022/05/09
CRDT- 2022/05/28 01:32
PHST- 2022/03/31 00:00 [received]
PHST- 2022/05/05 00:00 [revised]
PHST- 2022/05/06 00:00 [accepted]
PHST- 2022/05/28 01:32 [entrez]
PHST- 2022/05/29 06:00 [pubmed]
PHST- 2022/05/29 06:01 [medline]
PHST- 2022/05/09 00:00 [pmc-release]
AID - mi13050748 [pii]
AID - micromachines-13-00748 [pii]
AID - 10.3390/mi13050748 [doi]
PST - epublish
SO  - Micromachines (Basel). 2022 May 9;13(5):748. doi: 10.3390/mi13050748.