PMID- 35630258 OWN - NLM STAT- PubMed-not-MEDLINE LR - 20220716 IS - 2072-666X (Print) IS - 2072-666X (Electronic) IS - 2072-666X (Linking) VI - 13 IP - 5 DP - 2022 May 19 TI - Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer. LID - 10.3390/mi13050791 [doi] LID - 791 AB - A side ohmic contact mode for the double channel GaN/AlGaN epitaxial layer is proposed in this paper. Rectangle transmission line model (TLM) electrodes are prepared, and the specific contact resistance is tested at the annealing temperatures from 700 degrees C to 850 degrees C. The results show that the minimum specific contact resistance is 2.58 x 10(-7) Omega.cm(2) at the annealing temperature of 750 degrees C, which is three to four times lower than the surface contact mode. Scanning electron microscope (SEM), energy dispersive spectrometer (EDS), and atomic force microscope (AFM) were carried out for the analysis of the morphology, element composition, and the height fluctuation at the contact edge. With the increase in the annealing temperature, the specific contact resistance decreases due to the alloying of electrodes and the raised number of N vacancies. However, when the annealing temperature exceeds 800 degrees C, the state of the stress in the electrode films transforms from compressive stress to tensile stress. Besides, the volume expansion of metal electrode film and the increase in the roughness at the contact edge leads to the degradation of the side ohmic contact characteristics. FAU - Meng, Qingzhi AU - Meng Q AD - State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an 710049, China. FAU - Lin, Qijing AU - Lin Q AD - State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an 710049, China. AD - Collaborative Innovation Center of High-End Manufacturing Equipment, Xi'an Jiaotong University, Xi'an 710054, China. AD - School of Mechanical and Manufacturing Engineering, Xiamen Institute of Technology, Xiamen 361021, China. AD - Chongqing Key Laboratory of Micro-Nano Systems and Intelligent Sensing, Chongqing Academician Workstation, Chongqing 2011 Collaborative Innovation Center of Micro/Nano Sensing and Intelligent Ecological Internet of Things, Chongqing Technology and Business University, Chongqing 400067, China. FAU - Jing, Weixuan AU - Jing W AD - State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an 710049, China. FAU - Zhao, Na AU - Zhao N AUID- ORCID: 0000-0002-9113-4615 AD - State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an 710049, China. FAU - Yang, Ping AU - Yang P AD - State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an 710049, China. FAU - Lu, Dejiang AU - Lu D AD - State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an 710049, China. LA - eng GR - 2021YFB3201800/National Key Research and Development Program/ GR - 51720105016/National Natural Science Foundation of China/ GR - cstc2021jcyjmsxmX0223/Natural Science Foundation of Chongqing City/ PT - Journal Article DEP - 20220519 PL - Switzerland TA - Micromachines (Basel) JT - Micromachines JID - 101640903 PMC - PMC9147089 OTO - NOTNLM OT - annealing temperatures OT - side ohmic contact OT - specific contact resistance OT - transmission line model COIS- The authors declare no conflict of interest. EDAT- 2022/05/29 06:00 MHDA- 2022/05/29 06:01 PMCR- 2022/05/19 CRDT- 2022/05/28 01:32 PHST- 2022/04/03 00:00 [received] PHST- 2022/05/14 00:00 [revised] PHST- 2022/05/16 00:00 [accepted] PHST- 2022/05/28 01:32 [entrez] PHST- 2022/05/29 06:00 [pubmed] PHST- 2022/05/29 06:01 [medline] PHST- 2022/05/19 00:00 [pmc-release] AID - mi13050791 [pii] AID - micromachines-13-00791 [pii] AID - 10.3390/mi13050791 [doi] PST - epublish SO - Micromachines (Basel). 2022 May 19;13(5):791. doi: 10.3390/mi13050791.