PMID- 35630260
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220716
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 13
IP  - 5
DP  - 2022 May 20
TI  - A Wideband High-Efficiency GaN MMIC Power Amplifier for Sub-6-GHz Applications.
LID - 10.3390/mi13050793 [doi]
LID - 793
AB  - The monolithic microwave integrated circuit (MMIC) power amplifiers serve an 
      essential and critical role in RF transmit/receive (T/R) modules of phased array 
      radar systems, mobile communication systems and satellite systems. Over recent 
      years, there has been an increasing requirement to develop wideband 
      high-efficiency MMIC high power amplifiers (HPAs) to accommodate wideband 
      operation and reduce power consumption. This paper presents a wideband high 
      efficiency MMIC HPA for Sub-6-GHz applications using a 0.25-mum gate-length D-mode 
      GaN/SiC high electron mobility transistor (HEMT) process. The amplifier consists 
      of two stages with two HEMT cells for the driver stage and eight HEMT cells for 
      the power stage. To obtain a flat gain while maintaining the wideband 
      characteristic, a gain equalization technique is employed in the inter-stage 
      matching circuit. Meanwhile, a low-loss output matching network is utilized to 
      ensure high efficiency. The fabricated HPA occupies a compact chip area of 14.35 
      mm(2) including testing pads. Over the frequency range of 2-6 GHz, measured 
      results of this HPA show a saturated continuous wave (CW) output power of 
      44.4-45.2 dBm, a power added efficiency (PAE) of 35.8-51.3%, a small signal gain 
      of 24-25.5 dB, and maximum input and output return losses of 14.5 and 10 dB, 
      respectively.
FAU - Hu, Liulin
AU  - Hu L
AD  - School of Electronic Science and Engineering, University of Electronic Science 
      and Technology of China, Chengdu 611731, China.
AD  - Chengdu Ganide Technology Company, Ltd., Chengdu 610220, China.
FAU - Liao, Xuejie
AU  - Liao X
AD  - Chengdu Ganide Technology Company, Ltd., Chengdu 610220, China.
FAU - Zhang, Fan
AU  - Zhang F
AUID- ORCID: 0000-0001-6500-1598
AD  - Chengdu Ganide Technology Company, Ltd., Chengdu 610220, China.
FAU - Wu, Haifeng
AU  - Wu H
AD  - Chengdu Ganide Technology Company, Ltd., Chengdu 610220, China.
FAU - Ma, Shenglin
AU  - Ma S
AD  - Department of Mechanical and Electrical Engineering, Xiamen University, Xiamen 
      361005, China.
FAU - Lin, Qian
AU  - Lin Q
AUID- ORCID: 0000-0002-7466-7313
AD  - School of Physics and Electronic Information Engineering, Qinghai Minzu 
      University, Xining 810007, China.
FAU - Tang, Xiaohong
AU  - Tang X
AUID- ORCID: 0000-0001-9799-4109
AD  - School of Electronic Science and Engineering, University of Electronic Science 
      and Technology of China, Chengdu 611731, China.
LA  - eng
GR  - 62161046/National Natural Science Foundation/
GR  - 2021﹣ZJ﹣910/Natural Science Foundation of Qinghai Province/
PT  - Journal Article
DEP - 20220520
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC9145704
OTO - NOTNLM
OT  - GaN/SiC HEMT
OT  - MMIC
OT  - Sub-6-GHz
OT  - high efficiency
OT  - power amplifier
COIS- The authors declare no conflict of interest.
EDAT- 2022/05/29 06:00
MHDA- 2022/05/29 06:01
PMCR- 2022/05/20
CRDT- 2022/05/28 01:32
PHST- 2022/05/07 00:00 [received]
PHST- 2022/05/14 00:00 [revised]
PHST- 2022/05/17 00:00 [accepted]
PHST- 2022/05/28 01:32 [entrez]
PHST- 2022/05/29 06:00 [pubmed]
PHST- 2022/05/29 06:01 [medline]
PHST- 2022/05/20 00:00 [pmc-release]
AID - mi13050793 [pii]
AID - micromachines-13-00793 [pii]
AID - 10.3390/mi13050793 [doi]
PST - epublish
SO  - Micromachines (Basel). 2022 May 20;13(5):793. doi: 10.3390/mi13050793.