PMID- 35653931
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220621
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 33
IP  - 37
DP  - 2022 Jun 20
TI  - Single layer aligned semiconducting single-walled carbon nanotube array with high 
      linear density.
LID - 10.1088/1361-6528/ac7574 [doi]
AB  - Highly ordered semiconducting single-walled carbon nanotubes(sc-SWCNTs) array 
      with high purity, high linear density and controllable manner is strongly desired 
      for carbon-based integrated circuits, yet it remains a big challenge. Herein, 
      close-packed single layered and controllably aligned sc-SWCNTs arrays were 
      obtained through dielectrophoresis using a high purity sc-SWCNT dispersion. Under 
      optimized condition of length and average number of interconnecting junctions 
      across the channel full of aligned sc-SWCNTs, field effect transistors (FETs) 
      with high performance were achieved with both a high on/off current ratio and 
      large carrier mobility. Based on the optimized channel length, by systematically 
      optimizing the dielectrophoresis parameters of the frequency and duration of 
      applied AC voltage (V(pp)), the highly ordered sc-SWCNTs arrays with an 
      ultra-high linear density of 54 +/- 2 tubesmum(-1)showed relatively high device 
      performance of FET. The fabrication process optimized in this report can be 
      further extended and applied in large-area, low-cost carbon-based integrated 
      circuits.
CI  - (c) 2022 IOP Publishing Ltd.
FAU - Liu, Hao
AU  - Liu H
AD  - The Collaborative Innovation Center of Chemical Science and Engineering, 
      Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, 
      People's Republic of China.
AD  - CAS Key Laboratory of Standardization and Measurement for Nanotechnology & CAS 
      Center for Excellence in Nanoscience, National Center for Nanoscience and 
      Technology, Beijing 100190, People's Republic of China.
FAU - Liu, Fengjing
AU  - Liu F
AD  - CAS Key Laboratory of Standardization and Measurement for Nanotechnology & CAS 
      Center for Excellence in Nanoscience, National Center for Nanoscience and 
      Technology, Beijing 100190, People's Republic of China.
FAU - Sun, Zhaolou
AU  - Sun Z
AD  - CAS Key Laboratory of Standardization and Measurement for Nanotechnology & CAS 
      Center for Excellence in Nanoscience, National Center for Nanoscience and 
      Technology, Beijing 100190, People's Republic of China.
AD  - School of Materials Science and Engineering, Anyang Institute of Technology, 
      Anyang 455000, People's Republic of China.
FAU - Cai, Xiaoyong
AU  - Cai X
AD  - CAS Key Laboratory of Standardization and Measurement for Nanotechnology & CAS 
      Center for Excellence in Nanoscience, National Center for Nanoscience and 
      Technology, Beijing 100190, People's Republic of China.
FAU - Sun, Huijuan
AU  - Sun H
AD  - CAS Key Laboratory of Standardization and Measurement for Nanotechnology & CAS 
      Center for Excellence in Nanoscience, National Center for Nanoscience and 
      Technology, Beijing 100190, People's Republic of China.
FAU - Kai, Yuan
AU  - Kai Y
AD  - CAS Key Laboratory of Standardization and Measurement for Nanotechnology & CAS 
      Center for Excellence in Nanoscience, National Center for Nanoscience and 
      Technology, Beijing 100190, People's Republic of China.
AD  - University of Chinese Academy of Science, Beijing 100049, People's Republic of 
      China.
FAU - Chen, Li
AU  - Chen L
AD  - The Collaborative Innovation Center of Chemical Science and Engineering, 
      Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, 
      People's Republic of China.
FAU - Jiang, Chao
AU  - Jiang C
AUID- ORCID: 0000-0001-7889-0291
AD  - CAS Key Laboratory of Standardization and Measurement for Nanotechnology & CAS 
      Center for Excellence in Nanoscience, National Center for Nanoscience and 
      Technology, Beijing 100190, People's Republic of China.
AD  - University of Chinese Academy of Science, Beijing 100049, People's Republic of 
      China.
LA  - eng
PT  - Journal Article
DEP - 20220620
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
SB  - IM
OTO - NOTNLM
OT  - aligned sc-SWCNTs
OT  - anisotropy
OT  - dielectrophoresis
OT  - field effect transistor (FET)
EDAT- 2022/06/03 06:00
MHDA- 2022/06/03 06:01
CRDT- 2022/06/02 18:23
PHST- 2022/02/28 00:00 [received]
PHST- 2022/06/01 00:00 [accepted]
PHST- 2022/06/03 06:00 [pubmed]
PHST- 2022/06/03 06:01 [medline]
PHST- 2022/06/02 18:23 [entrez]
AID - 10.1088/1361-6528/ac7574 [doi]
PST - epublish
SO  - Nanotechnology. 2022 Jun 20;33(37). doi: 10.1088/1361-6528/ac7574.