PMID- 35683115
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220716
IS  - 1996-1944 (Print)
IS  - 1996-1944 (Electronic)
IS  - 1996-1944 (Linking)
VI  - 15
IP  - 11
DP  - 2022 May 27
TI  - Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal 
      Gate Structure: A Theoretical Investigation.
LID - 10.3390/ma15113818 [doi]
LID - 3818
AB  - The electrical and thermal characteristics of AlGaN/GaN high-electron mobility 
      transistor (HEMT) devices with a dual-metal gate (DMG) structure are investigated 
      by electrothermal simulation and compared with those of conventional single-metal 
      gate (SMG) structure devices. The simulations reveal that the DMG structure 
      devices have a 10-percent higher transconductance than the SMG structure devices 
      when the self-heating effect is considered. In the meantime, employing the DMG 
      structure, a decrease of more than 11% in the maximum temperature rise of the 
      devices can be achieved at the power density of 6 W/mm. Furthermore, the peak in 
      heat generation distribution at the gate edge of the devices is reduced using 
      this structure. These results could be attributed to the change in the electric 
      field distribution at the gate region and the suppression of the self-heating 
      effect. Therefore, the electrical and thermal performances of AlGaN/GaN HEMT 
      devices are improved by adopting the DMG structure.
FAU - Qu, Yongfeng
AU  - Qu Y
AD  - Key Laboratory for Physical Electronics and Devices of the Ministry of Education, 
      School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 
      710049, China.
FAU - Deng, Ningkang
AU  - Deng N
AD  - Key Laboratory for Physical Electronics and Devices of the Ministry of Education, 
      School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 
      710049, China.
FAU - Yuan, Yuan
AU  - Yuan Y
AD  - Science and Technology on Low-Light-Level Night Vision Laboratory, Xi'an 710065, 
      China.
FAU - Hu, Wenbo
AU  - Hu W
AUID- ORCID: 0000-0001-6776-9891
AD  - Key Laboratory for Physical Electronics and Devices of the Ministry of Education, 
      School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 
      710049, China.
FAU - Liu, Hongxia
AU  - Liu H
AUID- ORCID: 0000-0003-4547-0666
AD  - Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of 
      Microelectronics, Xidian University, Xi'an 710071, China.
FAU - Wu, Shengli
AU  - Wu S
AD  - Key Laboratory for Physical Electronics and Devices of the Ministry of Education, 
      School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 
      710049, China.
FAU - Wang, Hongxing
AU  - Wang H
AUID- ORCID: 0000-0002-2883-0765
AD  - Key Laboratory for Physical Electronics and Devices of the Ministry of Education, 
      School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 
      710049, China.
LA  - eng
GR  - No. xzd022020005/the Fundamental Research Funds for the Central Universities/
GR  - No. 614241204021703 and 20160103/the Foundation of Science and Technology on 
      Low-Light-Level Night Vision Laboratory/
PT  - Journal Article
DEP - 20220527
PL  - Switzerland
TA  - Materials (Basel)
JT  - Materials (Basel, Switzerland)
JID - 101555929
PMC - PMC9181770
OTO - NOTNLM
OT  - AlGaN/GaN HEMT
OT  - dual-metal gate
OT  - electrothermal simulation
OT  - self-heating effect
COIS- The authors declare no conflict of interest.
EDAT- 2022/06/11 06:00
MHDA- 2022/06/11 06:01
PMCR- 2022/05/27
CRDT- 2022/06/10 01:17
PHST- 2022/04/05 00:00 [received]
PHST- 2022/05/14 00:00 [revised]
PHST- 2022/05/23 00:00 [accepted]
PHST- 2022/06/10 01:17 [entrez]
PHST- 2022/06/11 06:00 [pubmed]
PHST- 2022/06/11 06:01 [medline]
PHST- 2022/05/27 00:00 [pmc-release]
AID - ma15113818 [pii]
AID - materials-15-03818 [pii]
AID - 10.3390/ma15113818 [doi]
PST - epublish
SO  - Materials (Basel). 2022 May 27;15(11):3818. doi: 10.3390/ma15113818.