PMID- 35744445
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220716
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 13
IP  - 6
DP  - 2022 May 26
TI  - Reduction in RF Loss Based on AlGaN Back-Barrier Structure Changes.
LID - 10.3390/mi13060830 [doi]
LID - 830
AB  - We designed a high electron mobility transistor (HEMT) epitaxial structure based 
      on an AlGaN/GaN heterojunction, utilizing Silvaco TCAD, and selected AlGaN with 
      an aluminum composition of 0.1 as the back-barrier of the AlGaN/GaN 
      heterojunction. We enhanced the confinement of the two-dimensional electron gas 
      (2DEG) by optimizing the structural parameters of the back barrier, so that the 
      leakage current of the buffer layer is reduced. Through these optimization 
      methods, a lower drain leakage current and a good radio frequency performance 
      were obtained. The device has a cut-off frequency of 48.9 GHz, a maximum 
      oscillation frequency of 73.20 GHz, and a radio frequency loss of 0.239 dB/mm (at 
      6 GHz). This work provides a basis for the preparation of radio frequency devices 
      with excellent frequency characteristics and low RF loss.
FAU - Fang, Yi
AU  - Fang Y
AD  - The Engineering Research Center for Optoelectronics of Guangdong Province, School 
      of Physics and Optoelectronics, South China University of Technology, Guangzhou 
      510640, China.
FAU - Chen, Ling
AU  - Chen L
AD  - The Engineering Research Center for Optoelectronics of Guangdong Province, School 
      of Physics and Optoelectronics, South China University of Technology, Guangzhou 
      510640, China.
FAU - Liu, Yuqi
AU  - Liu Y
AD  - The Engineering Research Center for Optoelectronics of Guangdong Province, School 
      of Physics and Optoelectronics, South China University of Technology, Guangzhou 
      510640, China.
FAU - Wang, Hong
AU  - Wang H
AUID- ORCID: 0000-0002-8875-0521
AD  - The Engineering Research Center for Optoelectronics of Guangdong Province, School 
      of Physics and Optoelectronics, South China University of Technology, Guangzhou 
      510640, China.
AD  - The Guangdong Provincial Engineering Laboratory for Wide Bandgap Semiconductor 
      Materials and Devices, School of Electronics and Information Engineering, South 
      China University of Technology, Guangzhou 510640, China.
AD  - Zhongshan Institute of Modern Industrial Technology, South China University of 
      Technology, Zhongshan 528437, China.
LA  - eng
GR  - No. 2020B010171001/Science and Technologies Plan Projects of Guangdong Province/
GR  - No. 2017B010112003/Science and Technologies Plan Projects of Guangdong Province/
GR  - No. 201905010001/Guangzhou Municipal Science and Technologies Plan Projects/
GR  - No. 201604046021/Guangzhou Municipal Science and Technologies Plan Projects/
GR  - No. 2019AG014/Science and Technology Development Special Fund Projects of 
      Zhongshan City/
GR  - No. 2019AG042/Science and Technology Development Special Fund Projects of 
      Zhongshan City/
GR  - No. 2020AG023/Science and Technology Development Special Fund Projects of 
      Zhongshan City/
PT  - Journal Article
DEP - 20220526
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC9227317
OTO - NOTNLM
OT  - AlGaN
OT  - HEMT
OT  - RF loss
OT  - back-barrier
COIS- The authors declare no conflict of interest.
EDAT- 2022/06/25 06:00
MHDA- 2022/06/25 06:01
PMCR- 2022/05/26
CRDT- 2022/06/24 01:30
PHST- 2022/05/02 00:00 [received]
PHST- 2022/05/22 00:00 [revised]
PHST- 2022/05/24 00:00 [accepted]
PHST- 2022/06/24 01:30 [entrez]
PHST- 2022/06/25 06:00 [pubmed]
PHST- 2022/06/25 06:01 [medline]
PHST- 2022/05/26 00:00 [pmc-release]
AID - mi13060830 [pii]
AID - micromachines-13-00830 [pii]
AID - 10.3390/mi13060830 [doi]
PST - epublish
SO  - Micromachines (Basel). 2022 May 26;13(6):830. doi: 10.3390/mi13060830.