PMID- 35807962
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220716
IS  - 2079-4991 (Print)
IS  - 2079-4991 (Electronic)
IS  - 2079-4991 (Linking)
VI  - 12
IP  - 13
DP  - 2022 Jun 21
TI  - Research on the Synergistic Effect of Total Ionization and Displacement Dose in 
      GaN HEMT Using Neutron and Gamma-Ray Irradiation.
LID - 10.3390/nano12132126 [doi]
LID - 2126
AB  - This paper studies the synergistic effect of total ionizing dose (TID) and 
      displacement damage dose (DDD) in enhancement-mode GaN high electron mobility 
      transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and 
      (60)Co gamma-ray irradiation. The results show that when the accumulated 
      gamma-ray doses are up to 800k rad(Si), the leakage-current degradations of the 
      two types of GaN HEMTs with 14 MeV neutron irradiation of 1.3 x 10(12) n/cm(2) 
      and 3 x 10(12) n/cm(2) exhibit a lower degradation than the sum of the two 
      separated effects. However, the threshold voltage shifts of the cascode structure 
      GaN HEMT show a higher degradation when exposed to both TID and DDD effects. 
      Moreover, the failure mechanisms of the synergistic effect in GaN HEMT are 
      investigated using the scanning electron microscopy technique. It is shown that 
      for the p-GaNHEMT, the increase in channel resistance and the degradation of 
      two-dimensional electron gas mobility caused by neutron irradiation suppresses 
      the increase in the TID leakage current. For the cascode structure HEMT, the 
      neutron radiation-generated defects in the oxide layer of the 
      metal-oxide-semiconductor field-effect transistor might capture holes induced by 
      gamma-ray irradiation, resulting in a further increase in the number of trapped 
      charges in the oxide layer.
FAU - Chen, Rui
AU  - Chen R
AUID- ORCID: 0000-0002-6128-1657
AD  - National Space Science Center, Chinese Academy of Sciences, Beijing 100190, 
      China.
AD  - Institute of Astronomy and Space, University of Chinese Academy of Sciences, 
      Beijing 101408, China.
FAU - Liang, Yanan
AU  - Liang Y
AD  - National Space Science Center, Chinese Academy of Sciences, Beijing 100190, 
      China.
FAU - Han, Jianwei
AU  - Han J
AD  - National Space Science Center, Chinese Academy of Sciences, Beijing 100190, 
      China.
AD  - Institute of Astronomy and Space, University of Chinese Academy of Sciences, 
      Beijing 101408, China.
FAU - Lu, Qihong
AU  - Lu Q
AD  - School of Physical Science and Technology, Yangzhou University, Yangzhou 225000, 
      China.
FAU - Chen, Qian
AU  - Chen Q
AD  - National Space Science Center, Chinese Academy of Sciences, Beijing 100190, 
      China.
FAU - Wang, Ziyu
AU  - Wang Z
AD  - National Space Science Center, Chinese Academy of Sciences, Beijing 100190, 
      China.
FAU - Wang, Hao
AU  - Wang H
AD  - National Space Science Center, Chinese Academy of Sciences, Beijing 100190, 
      China.
FAU - Wang, Xuan
AU  - Wang X
AD  - National Space Science Center, Chinese Academy of Sciences, Beijing 100190, 
      China.
FAU - Yuan, Runjie
AU  - Yuan R
AD  - National Space Science Center, Chinese Academy of Sciences, Beijing 100190, 
      China.
LA  - eng
GR  - 11875060/National Natural Science Foundation of China/
GR  - E12130101S/Foundation of Key Laboratory of the Chinese Academy of Sciences/
GR  - E039360101/Beijing Municipal Commission of Science and Technology/
PT  - Journal Article
DEP - 20220621
PL  - Switzerland
TA  - Nanomaterials (Basel)
JT  - Nanomaterials (Basel, Switzerland)
JID - 101610216
PMC - PMC9268257
OTO - NOTNLM
OT  - displacement damage effect
OT  - gallium nitride high electron mobility transistor
OT  - gamma-ray
OT  - neutron
OT  - total ionizing dose effect
COIS- The authors declare no conflict of interest.
EDAT- 2022/07/10 06:00
MHDA- 2022/07/10 06:01
PMCR- 2022/06/21
CRDT- 2022/07/09 01:22
PHST- 2022/05/13 00:00 [received]
PHST- 2022/06/02 00:00 [revised]
PHST- 2022/06/15 00:00 [accepted]
PHST- 2022/07/09 01:22 [entrez]
PHST- 2022/07/10 06:00 [pubmed]
PHST- 2022/07/10 06:01 [medline]
PHST- 2022/06/21 00:00 [pmc-release]
AID - nano12132126 [pii]
AID - nanomaterials-12-02126 [pii]
AID - 10.3390/nano12132126 [doi]
PST - epublish
SO  - Nanomaterials (Basel). 2022 Jun 21;12(13):2126. doi: 10.3390/nano12132126.