PMID- 35843869
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220818
IS  - 1613-6829 (Electronic)
IS  - 1613-6810 (Linking)
VI  - 18
IP  - 33
DP  - 2022 Aug
TI  - Heterogeneous Integration of Atomically Thin Semiconductors for Non-von Neumann 
      CMOS.
PG  - e2202590
LID - 10.1002/smll.202202590 [doi]
AB  - Atomically thin, 2D, and semiconducting transition metal dichalcogenides (TMDs) 
      are seen as potential candidates for complementary metal oxide semiconductor 
      (CMOS) technology in future nodes. While high-performance field effect 
      transistors (FETs), logic gates, and integrated circuits (ICs) made from n-type 
      TMDs such as MoS(2) and WS(2) grown at wafer scale have been demonstrated, 
      realizing CMOS electronics necessitates integration of large area p-type 
      semiconductors. Furthermore, the physical separation of memory and logic is a 
      bottleneck of the existing CMOS technology and must be overcome to reduce the 
      energy burden for computation. In this article, the existing limitations are 
      overcome and for the first time, a heterogeneous integration of large area grown 
      n-type MoS(2) and p-type vanadium doped WSe(2) FETs with non-volatile and analog 
      memory storage capabilities to achieve a non-von Neumann 2D CMOS platform is 
      introduced. This manufacturing process flow allows for precise positioning of 
      n-type and p-type FETs, which is critical for any IC development. Inverters and a 
      simplified 2-input-1-output multiplexers and neuromorphic computing primitives 
      such as Gaussian, sigmoid, and tanh activation functions using this non-von 
      Neumann 2D CMOS platform are also demonstrated. This demonstration shows the 
      feasibility of heterogeneous integration of wafer scale 2D materials.
CI  - (c) 2022 Wiley-VCH GmbH.
FAU - Pendurthi, Rahul
AU  - Pendurthi R
AD  - Engineering Science and Mechanics, Penn State University, University Park, PA, 
      16802, USA.
FAU - Jayachandran, Darsith
AU  - Jayachandran D
AD  - Engineering Science and Mechanics, Penn State University, University Park, PA, 
      16802, USA.
FAU - Kozhakhmetov, Azimkhan
AU  - Kozhakhmetov A
AD  - Materials Science and Engineering, Penn State University, University Park, PA, 
      16802, USA.
FAU - Trainor, Nicholas
AU  - Trainor N
AD  - Materials Science and Engineering, Penn State University, University Park, PA, 
      16802, USA.
AD  - 2D Crystal Consortium - Materials Innovation Platform (2DCC-MIP) Materials 
      Research Institute, Penn State University, University Park, PA, 16802, USA.
FAU - Robinson, Joshua A
AU  - Robinson JA
AD  - Materials Science and Engineering, Penn State University, University Park, PA, 
      16802, USA.
AD  - 2D Crystal Consortium - Materials Innovation Platform (2DCC-MIP) Materials 
      Research Institute, Penn State University, University Park, PA, 16802, USA.
FAU - Redwing, Joan M
AU  - Redwing JM
AD  - Materials Science and Engineering, Penn State University, University Park, PA, 
      16802, USA.
AD  - 2D Crystal Consortium - Materials Innovation Platform (2DCC-MIP) Materials 
      Research Institute, Penn State University, University Park, PA, 16802, USA.
FAU - Das, Saptarshi
AU  - Das S
AUID- ORCID: 0000-0002-0188-945X
AD  - Engineering Science and Mechanics, Penn State University, University Park, PA, 
      16802, USA.
AD  - Materials Science and Engineering, Penn State University, University Park, PA, 
      16802, USA.
AD  - 2D Crystal Consortium - Materials Innovation Platform (2DCC-MIP) Materials 
      Research Institute, Penn State University, University Park, PA, 16802, USA.
AD  - Electrical Engineering and Computer Science, Penn State University, University 
      Park, PA, 16802, USA.
LA  - eng
GR  - W911NF1920338/Army Research Office/
GR  - 2DCCMIP/National Science Foundation/
GR  - DMR-1539916/National Science Foundation/
GR  - DMR-2039351/National Science Foundation/
GR  - ECCS-2042154/National Science Foundation/
PT  - Journal Article
DEP - 20220717
PL  - Germany
TA  - Small
JT  - Small (Weinheim an der Bergstrasse, Germany)
JID - 101235338
SB  - IM
OTO - NOTNLM
OT  - complementary logic
OT  - field-effect transistors
OT  - heterogeneous integration
OT  - integrated circuits
OT  - two-dimensional materials
EDAT- 2022/07/18 06:00
MHDA- 2022/07/18 06:01
CRDT- 2022/07/17 22:13
PHST- 2022/06/21 00:00 [revised]
PHST- 2022/05/28 00:00 [received]
PHST- 2022/07/18 06:00 [pubmed]
PHST- 2022/07/18 06:01 [medline]
PHST- 2022/07/17 22:13 [entrez]
AID - 10.1002/smll.202202590 [doi]
PST - ppublish
SO  - Small. 2022 Aug;18(33):e2202590. doi: 10.1002/smll.202202590. Epub 2022 Jul 17.