PMID- 35856256
OWN - NLM
STAT- MEDLINE
DCOM- 20230724
LR  - 20230724
IS  - 1522-7243 (Electronic)
IS  - 1522-7235 (Linking)
VI  - 38
IP  - 7
DP  - 2023 Jul
TI  - Electronic and optical properties of Nb/V-doped WS(2) monolayer: A 
      first-principles study.
PG  - 1215-1220
LID - 10.1002/bio.4342 [doi]
AB  - The electronic, dielectric, and optical properties of pure and Nb/V-doped WS(2) 
      monolayer are being investigated using the first-principles density functional 
      theory (DFT). The electronic band structure calculations reveal that the pure and 
      doped WS(2) monolayer is a direct band gap semiconductor. It is seen that the 
      doping not only slightly reduces the band gap but also changes the n-type 
      character of pure WS(2) monolayer to the p-type character. Hence, it may be 
      useful for channel material in field effect transistors (FETs). Moreover, the 
      optical studies reveal that the WS(2) monolayer shows a significantly good 
      optical response. However, a small ultraviolet shift is observed in the optical 
      response of the doped case compared to the pristine WS(2) monolayer. This study 
      suggests that the WS(2) monolayer can be a possible optical material for 
      optoelectronic applications, and it can also be a replacement of MoS(2) -based 
      future electronics and optoelectronics.
CI  - (c) 2022 John Wiley & Sons Ltd.
FAU - Kumar, Vipin
AU  - Kumar V
AUID- ORCID: 0000-0002-2211-2607
AD  - Department of Physics, Yeungnam University, Gyeongsan, Gyeongbuk, South Korea.
FAU - Mishra, Rajneesh Kumar
AU  - Mishra RK
AD  - Department of Physics, Yeungnam University, Gyeongsan, Gyeongbuk, South Korea.
FAU - Kumar, Pushpendra
AU  - Kumar P
AUID- ORCID: 0000-0002-4435-1430
AD  - Department of Physics, Manipal University Jaipur, Jaipur, Rajasthan, India.
AD  - MSRC, Manipal University Jaipur, Jaipur, Rajasthan, India.
FAU - Gwag, Jin Seog
AU  - Gwag JS
AD  - Department of Physics, Yeungnam University, Gyeongsan, Gyeongbuk, South Korea.
LA  - eng
GR  - 2022R1A2C1012996/National Research Foundation of Korea (NRF)/
PT  - Journal Article
DEP - 20220730
PL  - England
TA  - Luminescence
JT  - Luminescence : the journal of biological and chemical luminescence
JID - 100889025
RN  - 05175J654G (Niobium)
SB  - IM
MH  - *Niobium
MH  - *Electronics
MH  - Semiconductors
EDAT- 2022/07/21 06:00
MHDA- 2023/07/24 06:43
CRDT- 2022/07/20 05:12
PHST- 2022/07/08 00:00 [revised]
PHST- 2022/05/14 00:00 [received]
PHST- 2022/07/17 00:00 [accepted]
PHST- 2023/07/24 06:43 [medline]
PHST- 2022/07/21 06:00 [pubmed]
PHST- 2022/07/20 05:12 [entrez]
AID - 10.1002/bio.4342 [doi]
PST - ppublish
SO  - Luminescence. 2023 Jul;38(7):1215-1220. doi: 10.1002/bio.4342. Epub 2022 Jul 30.