PMID- 35914677
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20221007
LR  - 20230705
IS  - 1476-4687 (Electronic)
IS  - 0028-0836 (Linking)
VI  - 610
IP  - 7930
DP  - 2022 Oct
TI  - P-type electrical contacts for 2D transition-metal dichalcogenides.
PG  - 61-66
LID - 10.1038/s41586-022-05134-w [doi]
AB  - Digital logic circuits are based on complementary pairs of n- and p-type field 
      effect transistors (FETs) via complementary metal oxide semiconductor technology. 
      In three-dimensional (3D) or bulk semiconductors, substitutional doping of 
      acceptor or donor impurities is used to achieve p- and n-type FETs. However, the 
      controllable p-type doping of low-dimensional semiconductors such as 
      two-dimensional (2D) transition-metal dichalcogenides (TMDs) has proved to be 
      challenging. Although it is possible to achieve high-quality, low-resistance 
      n-type van der Waals (vdW) contacts on 2D TMDs(1-5), obtaining p-type devices by 
      evaporating high-work-function metals onto 2D TMDs has not been realized so far. 
      Here we report high-performance p-type devices on single- and few-layered 
      molybdenum disulfide and tungsten diselenide based on industry-compatible 
      electron beam evaporation of high-work-function metals such as palladium and 
      platinum. Using atomic resolution imaging and spectroscopy, we demonstrate 
      near-ideal vdW interfaces without chemical interactions between the 2D TMDs and 
      3D metals. Electronic transport measurements reveal that the Fermi level is 
      unpinned and p-type FETs based on vdW contacts exhibit low contact resistance of 
      3.3 kOmega microm, high mobility values of approximately 190 cm(2 )V(-1 )s(-1) at room 
      temperature, saturation currents in excess of 10(-5) A mum(-)(1) and an on/off 
      ratio of 10(7). We also demonstrate an ultra-thin photovoltaic cell based on n- 
      and p-type vdW contacts with an open circuit voltage of 0.6 V and a power 
      conversion efficiency of 0.82%.
CI  - (c) 2022. The Author(s), under exclusive licence to Springer Nature Limited.
FAU - Wang, Yan
AU  - Wang Y
AUID- ORCID: 0000-0001-9241-3512
AD  - Department of Materials Science and Metallurgy, University of Cambridge, 
      Cambridge, UK.
FAU - Kim, Jong Chan
AU  - Kim JC
AUID- ORCID: 0000-0003-4101-0590
AD  - Department of Materials Science and Engineering, Ulsan National Institute of 
      Science and Technology (UNIST), Ulsan, Republic of Korea.
FAU - Li, Yang
AU  - Li Y
AUID- ORCID: 0000-0003-2005-7381
AD  - Department of Materials Science and Metallurgy, University of Cambridge, 
      Cambridge, UK.
FAU - Ma, Kyung Yeol
AU  - Ma KY
AD  - Department of Chemistry & Low-Dimensional Carbon Materials Center, Ulsan National 
      Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.
FAU - Hong, Seokmo
AU  - Hong S
AD  - Department of Chemistry & Low-Dimensional Carbon Materials Center, Ulsan National 
      Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.
FAU - Kim, Minsu
AU  - Kim M
AD  - Department of Chemistry & Low-Dimensional Carbon Materials Center, Ulsan National 
      Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.
FAU - Shin, Hyeon Suk
AU  - Shin HS
AUID- ORCID: 0000-0003-0495-7443
AD  - Department of Chemistry & Low-Dimensional Carbon Materials Center, Ulsan National 
      Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.
FAU - Jeong, Hu Young
AU  - Jeong HY
AUID- ORCID: 0000-0002-5550-5298
AD  - Graduate School of Semiconductor Materials and Devices Engineering, Ulsan 
      National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.
FAU - Chhowalla, Manish
AU  - Chhowalla M
AUID- ORCID: 0000-0002-8183-4044
AD  - Department of Materials Science and Metallurgy, University of Cambridge, 
      Cambridge, UK. mc209@cam.ac.uk.
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20220801
PL  - England
TA  - Nature
JT  - Nature
JID - 0410462
SB  - IM
EDAT- 2022/08/02 06:00
MHDA- 2022/10/12 06:00
CRDT- 2022/08/01 19:15
PHST- 2021/02/26 00:00 [received]
PHST- 2022/07/21 00:00 [accepted]
PHST- 2022/08/02 06:00 [pubmed]
PHST- 2022/10/12 06:00 [medline]
PHST- 2022/08/01 19:15 [entrez]
AID - 10.1038/s41586-022-05134-w [pii]
AID - 10.1038/s41586-022-05134-w [doi]
PST - ppublish
SO  - Nature. 2022 Oct;610(7930):61-66. doi: 10.1038/s41586-022-05134-w. Epub 2022 Aug 
      1.