PMID- 35947928
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220906
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 33
IP  - 46
DP  - 2022 Aug 30
TI  - Leveraging negative capacitance ferroelectric materials for performance boosting 
      of sub-10 nm graphene nanoribbon field-effect transistors: a quantum simulation 
      study.
LID - 10.1088/1361-6528/ac8883 [doi]
AB  - In this paper, an ultrascaled ballistic graphene nanoribbon field-effect 
      transistor (GNRFET) endowed with a compound double-gate based on 
      metal-ferroelectric-metal (MFM) structure is proposed to overcome the limitations 
      encountered with its conventional counterpart. The ballistic transistor is 
      computationally investigated by solving self-consistently the non-equilibrium 
      Green's function formalism and the Poisson solver in conjunction with the 
      Landau-Khalatnikov equation. The numerical investigation has included the 
      ferroelectric-induced amplified internal metal voltage, the role of the 
      ferroelectric thickness in boosting the device performance, the assessment of the 
      switching and subthreshold performance, and the analysis of the FE-GNRFET scaling 
      capability. The simulations revealed that the MFM-based gate can significantly 
      boost the performance of GNRFETs, including the switching behavior, the 
      on-current, the off-current, the current ratio, the swing factor, the intrinsic 
      delay, and the scaling capability. More importantly, the proposed MFM GNRFET was 
      found able to provide sub-thermionic subthreshold swing even with sub-10 nm gate 
      lengths, which is very promising for low-power applications. The obtained results 
      indicate that the MFM-based gating approach can give new impulses to the GNRFET 
      technology.
CI  - (c) 2022 IOP Publishing Ltd.
FAU - Tamersit, Khalil
AU  - Tamersit K
AUID- ORCID: 0000-0002-1023-843X
AD  - Department of Electronics and Telecommunications, Universite 8 Mai 1945 Guelma, 
      Guelma 24000, Algeria.
AD  - Department of Electrical and Automatic Engineering, Universite 8 Mai 1945 Guelma, 
      Guelma 24000, Algeria.
AD  - Laboratory of Inverse Problems, Modeling, Information and Systems (PIMIS), 
      Universite 8 Mai 1945 Guelma, Guelma 24000, Algeria.
FAU - Moaiyeri, Mohammad Hossein
AU  - Moaiyeri MH
AD  - Nanotechnology and Quantum Computing Lab of the Shahid Beheshti University, 
      Tehran, Iran.
AD  - Faculty of Electrical Engineering, Shahid Beheshti University, Tehran, Iran.
FAU - Jooq, Mohammad Khaleqi Qaleh
AU  - Jooq MKQ
AD  - Nanotechnology and Quantum Computing Lab of the Shahid Beheshti University, 
      Tehran, Iran.
LA  - eng
PT  - Journal Article
DEP - 20220830
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
SB  - IM
OTO - NOTNLM
OT  - field-effect transistors (FETs)
OT  - graphene nanoribbon (GNR)
OT  - metal-ferroelectric-metal-insulator-semiconductor (MFMIS)
OT  - negative capacitance (NC)
OT  - quantum simulation
OT  - subthreshold swing (SS)
OT  - switching
EDAT- 2022/08/11 06:00
MHDA- 2022/08/11 06:01
CRDT- 2022/08/10 18:17
PHST- 2022/04/03 00:00 [received]
PHST- 2022/08/10 00:00 [accepted]
PHST- 2022/08/11 06:00 [pubmed]
PHST- 2022/08/11 06:01 [medline]
PHST- 2022/08/10 18:17 [entrez]
AID - 10.1088/1361-6528/ac8883 [doi]
PST - epublish
SO  - Nanotechnology. 2022 Aug 30;33(46). doi: 10.1088/1361-6528/ac8883.