PMID- 35951269
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220814
IS  - 1931-7573 (Print)
IS  - 1556-276X (Electronic)
IS  - 1556-276X (Linking)
VI  - 17
IP  - 1
DP  - 2022 Aug 11
TI  - High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double 
      Gates.
PG  - 73
LID - 10.1186/s11671-022-03713-4 [doi]
LID - 73
AB  - A novel double gates flip-structure enhancement-mode (E-mode) high electron 
      mobility transistor with step field plate (DFF HEMT) is proposed. It features 
      face-to-face double gates, including a top trench MIS gate with a step field 
      plate and a bottom planar MIS gate, which is shorted together. In the on-state, 
      the double gates not only can restore the 2DEG by the higher electric potential, 
      but also can form the electron accumulation layers, and thus increase the 
      saturation output current and reduce the on-resistance. The face-to-face double 
      gates together deplete the 2DEG by using the work function difference to realize 
      E-mode, instead of by etching the AlGaN layer under the gate for the conventional 
      MIS gate E-mode HEMT. The double-gate structure not only avoids etch damage, but 
      also maintains both high threshold voltage and low on-resistance. Meanwhile, the 
      step gate field plate modulates E-field distribution to increase the BV. In order 
      to easily fabricate, the trench gate with step field plate must be located on the 
      top of device, forming the flip-structure. The flip-structure is also beneficial 
      to decrease the leakage current in the substrate. The simulated V(th), BV and 
      I(d) of the DFF HEMT are 0.8 V, 465 V and 494 mA/mm, respectively. The FOM of the 
      DFF HEMT is 79.8% and 444.2% higher than those of the conventional MIS-FP HEMT 
      and MIS HEMT.
CI  - (c) 2022. The Author(s).
FAU - Deng, Siyu
AU  - Deng S
AD  - The State Key Laboratory of Electronic Thin Films and Integrated Devices, 
      University of Electronic Science and Technology of China, Chengdu, 610054, China.
FAU - Wei, Jie
AU  - Wei J
AD  - The State Key Laboratory of Electronic Thin Films and Integrated Devices, 
      University of Electronic Science and Technology of China, Chengdu, 610054, China.
FAU - Zhang, Cheng
AU  - Zhang C
AD  - The State Key Laboratory of Electronic Thin Films and Integrated Devices, 
      University of Electronic Science and Technology of China, Chengdu, 610054, China.
FAU - Liao, Dezun
AU  - Liao D
AD  - The State Key Laboratory of Electronic Thin Films and Integrated Devices, 
      University of Electronic Science and Technology of China, Chengdu, 610054, China.
FAU - Sun, Tao
AU  - Sun T
AD  - The State Key Laboratory of Electronic Thin Films and Integrated Devices, 
      University of Electronic Science and Technology of China, Chengdu, 610054, China.
FAU - Yang, Kemeng
AU  - Yang K
AD  - The State Key Laboratory of Electronic Thin Films and Integrated Devices, 
      University of Electronic Science and Technology of China, Chengdu, 610054, China.
FAU - Xi, Lufan
AU  - Xi L
AD  - The State Key Laboratory of Electronic Thin Films and Integrated Devices, 
      University of Electronic Science and Technology of China, Chengdu, 610054, China.
FAU - Zhang, Bo
AU  - Zhang B
AD  - The State Key Laboratory of Electronic Thin Films and Integrated Devices, 
      University of Electronic Science and Technology of China, Chengdu, 610054, China.
FAU - Luo, Xiaorong
AU  - Luo X
AD  - The State Key Laboratory of Electronic Thin Films and Integrated Devices, 
      University of Electronic Science and Technology of China, Chengdu, 610054, China. 
      xrluo@uestc.edu.cn.
LA  - eng
GR  - 61874149/the National Natural Science Foundations of China/
GR  - 2018-JCJQ-ZQ-060/the Outstanding Youth Science and Technology Foundation of 
      China/
PT  - Journal Article
DEP - 20220811
PL  - United States
TA  - Nanoscale Res Lett
JT  - Nanoscale research letters
JID - 101279750
PMC - PMC9372255
OTO - NOTNLM
OT  - AlGaN/GaN HEMT
OT  - Breakdown voltage
OT  - Double gates
OT  - Enhancement-mode
OT  - Flip-structure
COIS- The authors declare that they have no competing interests.
EDAT- 2022/08/12 06:00
MHDA- 2022/08/12 06:01
PMCR- 2022/08/11
CRDT- 2022/08/11 11:27
PHST- 2022/04/26 00:00 [received]
PHST- 2022/08/03 00:00 [accepted]
PHST- 2022/08/11 11:27 [entrez]
PHST- 2022/08/12 06:00 [pubmed]
PHST- 2022/08/12 06:01 [medline]
PHST- 2022/08/11 00:00 [pmc-release]
AID - 10.1186/s11671-022-03713-4 [pii]
AID - 3713 [pii]
AID - 10.1186/s11671-022-03713-4 [doi]
PST - epublish
SO  - Nanoscale Res Lett. 2022 Aug 11;17(1):73. doi: 10.1186/s11671-022-03713-4.