PMID- 36014210
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220830
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 13
IP  - 8
DP  - 2022 Aug 11
TI  - Mechanism Analysis and Multi-Scale Protection Design of GaN HEMT Induced by 
      High-Power Electromagnetic Pulse.
LID - 10.3390/mi13081288 [doi]
LID - 1288
AB  - Currently, severe electromagnetic circumstances pose a serious threat to 
      electronic systems. In this paper, the damage effects of a high-power 
      electromagnetic pulse (EMP) on the GaN high-electron-mobility transistor (HEMT) 
      were investigated in detail. The mechanism is presented by analyzing the 
      variation in the internal distribution of multiple physical quantities in the 
      device. The results reveal that the device damage was dominated by different 
      thermal accumulation effects such as self-heating, avalanche breakdown and hot 
      carrier emission during the action of the high-power EMP. Furthermore, a 
      multi-scale protection design for the GaN HEMT against high-power electromagnetic 
      interference (EMI) is presented and verified by a simulation study. The device 
      structure optimization results demonstrate that the symmetrical structure, with 
      the same distance from the gate to drain (Lgd) and gate to source (Lgs), 
      possesses a higher damage threshold compared to the asymmetrical structure, and 
      that a proper passivation layer, which enhances the breakdown characteristics, 
      can improve the anti-EMI capability. The circuit optimization results present the 
      influences of external components on the damage progress. The findings show that 
      the resistive components which are in series at the source and gate will 
      strengthen the capability of the device to withstand high-power EMP damage. All 
      of the above conclusions are important for device reliability design using 
      gallium nitride materials, especially when the device operates under severe 
      electromagnetic circumstances.
FAU - Wang, Lei
AU  - Wang L
AD  - Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials 
      and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China.
FAU - Chai, Changchun
AU  - Chai C
AD  - Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials 
      and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China.
FAU - Zhao, Tianlong
AU  - Zhao T
AUID- ORCID: 0000-0002-9598-2734
AD  - Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials 
      and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China.
FAU - Li, Fuxing
AU  - Li F
AD  - Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials 
      and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China.
FAU - Qin, Yingshuo
AU  - Qin Y
AUID- ORCID: 0000-0001-9631-0828
AD  - Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials 
      and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China.
FAU - Yang, Yintang
AU  - Yang Y
AD  - Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials 
      and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China.
LA  - eng
GR  - 61974116，51802242/National Natural Science Foundation of China/
GR  - 2019M663927XB/China Postdoctoral Science Foundation/
GR  - B12026/111 Project/
PT  - Journal Article
DEP - 20220811
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC9416283
OTO - NOTNLM
OT  - GaN HEMT
OT  - damage effect
OT  - high-power electromagnetic pulse
OT  - protection design
COIS- The authors declare no conflict of interest.
EDAT- 2022/08/27 06:00
MHDA- 2022/08/27 06:01
PMCR- 2022/08/11
CRDT- 2022/08/26 01:35
PHST- 2022/07/16 00:00 [received]
PHST- 2022/07/29 00:00 [revised]
PHST- 2022/08/08 00:00 [accepted]
PHST- 2022/08/26 01:35 [entrez]
PHST- 2022/08/27 06:00 [pubmed]
PHST- 2022/08/27 06:01 [medline]
PHST- 2022/08/11 00:00 [pmc-release]
AID - mi13081288 [pii]
AID - micromachines-13-01288 [pii]
AID - 10.3390/mi13081288 [doi]
PST - epublish
SO  - Micromachines (Basel). 2022 Aug 11;13(8):1288. doi: 10.3390/mi13081288.