PMID- 36079422
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220913
IS  - 1996-1944 (Print)
IS  - 1996-1944 (Electronic)
IS  - 1996-1944 (Linking)
VI  - 15
IP  - 17
DP  - 2022 Sep 1
TI  - Influence of a Two-Dimensional Growth Mode on Electrical Properties of the GaN 
      Buffer in an AlGaN/GaN High Electron Mobility Transistor.
LID - 10.3390/ma15176043 [doi]
LID - 6043
AB  - An extensive study has been conducted on a series of AlGaN/GaN high electron 
      mobility transistor (HEMT) samples using metalorganic vapour phase epitaxy, to 
      investigate the influence of growth modes for GaN buffer layers on device 
      performance. The unintentional doping concentration and screw dislocation density 
      are significantly lower in the samples grown with our special two-dimensional 
      (2D) growth approach, compared to a widely-used two-step method combining the 2D 
      and 3D growth. The GaN buffer layers grown by the 2D growth approach have 
      achieved an unintentional doping density of 2 x 10(14) cm(-3), two orders lower 
      than 10(16) cm(-3) of the GaN samples grown using a conventional two-step method. 
      High-frequency capacitance measurements show that the samples with lower 
      unintentional doping densities have lower buffer leakage and higher breakdown 
      limits. This series of samples have attained sub-nA/mm leakages, a high breakdown 
      limit of 2.5 MV/cm, and a saturation current density of about 1.1 A/mm. It 
      indicates that our special 2D growth approach can effectively lessen the 
      unintentional doping in GaN buffer layers, leading to low buffer leakage and high 
      breakdown limits of GaN/AlGaN HEMTs.
FAU - Esendag, Volkan
AU  - Esendag V
AUID- ORCID: 0000-0002-4483-8759
AD  - Department of Electrical and Electronic Engineering, The University of Sheffield, 
      Mappin Street, Sheffield S1 3JD, UK.
FAU - Feng, Peng
AU  - Feng P
AD  - Department of Electrical and Electronic Engineering, The University of Sheffield, 
      Mappin Street, Sheffield S1 3JD, UK.
FAU - Zhu, Chenqi
AU  - Zhu C
AD  - Department of Electrical and Electronic Engineering, The University of Sheffield, 
      Mappin Street, Sheffield S1 3JD, UK.
FAU - Ni, Rongzi
AU  - Ni R
AD  - Department of Electrical and Electronic Engineering, The University of Sheffield, 
      Mappin Street, Sheffield S1 3JD, UK.
FAU - Bai, Jie
AU  - Bai J
AD  - Department of Electrical and Electronic Engineering, The University of Sheffield, 
      Mappin Street, Sheffield S1 3JD, UK.
FAU - Wang, Tao
AU  - Wang T
AUID- ORCID: 0000-0001-5976-4994
AD  - Department of Electrical and Electronic Engineering, The University of Sheffield, 
      Mappin Street, Sheffield S1 3JD, UK.
LA  - eng
GR  - EP/P006973/1, EP/M015181/1, EP/P006361/1/Engineering and Physical Sciences 
      Research Council/
PT  - Journal Article
DEP - 20220901
PL  - Switzerland
TA  - Materials (Basel)
JT  - Materials (Basel, Switzerland)
JID - 101555929
PMC - PMC9456622
OTO - NOTNLM
OT  - AlGaN
OT  - GaN
OT  - capacitance-voltage
OT  - dislocations
OT  - electrical breakdown
OT  - electrical characterisation
OT  - unintentional doping
COIS- The authors declare no conflict of interest.
EDAT- 2022/09/10 06:00
MHDA- 2022/09/10 06:01
PMCR- 2022/09/01
CRDT- 2022/09/09 01:22
PHST- 2022/08/09 00:00 [received]
PHST- 2022/08/28 00:00 [revised]
PHST- 2022/08/29 00:00 [accepted]
PHST- 2022/09/09 01:22 [entrez]
PHST- 2022/09/10 06:00 [pubmed]
PHST- 2022/09/10 06:01 [medline]
PHST- 2022/09/01 00:00 [pmc-release]
AID - ma15176043 [pii]
AID - materials-15-06043 [pii]
AID - 10.3390/ma15176043 [doi]
PST - epublish
SO  - Materials (Basel). 2022 Sep 1;15(17):6043. doi: 10.3390/ma15176043.