PMID- 36080117
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220913
IS  - 2079-4991 (Print)
IS  - 2079-4991 (Electronic)
IS  - 2079-4991 (Linking)
VI  - 12
IP  - 17
DP  - 2022 Sep 5
TI  - The 3.4 GHz BAW RF Filter Based on Single Crystal AlN Resonator for 5G 
      Application.
LID - 10.3390/nano12173082 [doi]
LID - 3082
AB  - To meet the stringent requirements of 5G communication, we proposed a 
      high-performance bulk acoustic wave (BAW) filter based on single crystal AlN 
      piezoelectric films on a SiC substrate. The fabrication of the BAW filter is 
      compatible with the GaN high electron mobility transistor (HEMT) process, 
      enabling the implementation of the integration of the BAW device and 
      high-performance monolithic microwave integrated circuit (MMIC). The single 
      crystal AlN piezoelectric film with 650-nm thickness was epitaxially grown on the 
      SiC substrate by Metal Organic Chemical Vapor Deposition (MOCVD). After wafer 
      bonding and substrate removal, the single crystal AlN film with electrode layers 
      was transferred to another SiC wafer to form an air gap type BAW. Testing results 
      showed that the fabricated resonators have a maximum Q-factor up to 837 at 3.3 
      GHz resonant frequency and electromechanical coupling coefficient up to 7.2%. 
      Ladder-type filters were developed to verify the capabilities of the BAW and 
      process, which has a center frequency of 3.38 GHz with 160 MHz 3 dB bandwidth. 
      The filter achieved a minimum 1.5 dB insertion loss and more than 31 dB 
      out-of-band rejection. The high performance of the filters is attributed to the 
      high crystallinity and low defects of epitaxial single crystal AlN films.
FAU - Ding, Rui
AU  - Ding R
AUID- ORCID: 0000-0002-5709-5050
AD  - Key Lab of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang, 
      College of Information Science and Electronic Engineering, Zhejiang University, 
      Hangzhou 310063, China.
AD  - MOE Frontier Science Center for Brain Science & Brain-Machine Integration, 
      Zhejiang University, Hangzhou 310063, China.
AD  - ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 
      311200, China.
FAU - Xuan, Weipeng
AU  - Xuan W
AUID- ORCID: 0000-0002-4818-2881
AD  - ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 
      311200, China.
AD  - Ministry of Education Key Lab of RF Circuits and Systems, College of Electronics 
      & Information, Hangzhou Dianzi University, Hangzhou 310061, China.
FAU - Dong, Shurong
AU  - Dong S
AUID- ORCID: 0000-0002-8715-7072
AD  - Key Lab of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang, 
      College of Information Science and Electronic Engineering, Zhejiang University, 
      Hangzhou 310063, China.
AD  - MOE Frontier Science Center for Brain Science & Brain-Machine Integration, 
      Zhejiang University, Hangzhou 310063, China.
AD  - ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 
      311200, China.
FAU - Zhang, Biao
AU  - Zhang B
AD  - ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 
      311200, China.
AD  - Ministry of Education Key Lab of RF Circuits and Systems, College of Electronics 
      & Information, Hangzhou Dianzi University, Hangzhou 310061, China.
FAU - Gao, Feng
AU  - Gao F
AD  - Key Lab of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang, 
      College of Information Science and Electronic Engineering, Zhejiang University, 
      Hangzhou 310063, China.
AD  - ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 
      311200, China.
FAU - Liu, Gang
AU  - Liu G
AD  - ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 
      311200, China.
FAU - Zhang, Zichao
AU  - Zhang Z
AD  - Innovation and Research Institute of HIWING Technology Academy, Beijing 100074, 
      China.
FAU - Jin, Hao
AU  - Jin H
AUID- ORCID: 0000-0001-9798-5149
AD  - Key Lab of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang, 
      College of Information Science and Electronic Engineering, Zhejiang University, 
      Hangzhou 310063, China.
AD  - MOE Frontier Science Center for Brain Science & Brain-Machine Integration, 
      Zhejiang University, Hangzhou 310063, China.
AD  - ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 
      311200, China.
FAU - Luo, Jikui
AU  - Luo J
AUID- ORCID: 0000-0003-0310-2443
AD  - Key Lab of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang, 
      College of Information Science and Electronic Engineering, Zhejiang University, 
      Hangzhou 310063, China.
LA  - eng
GR  - No.2021C05004/Zhejiang Province Key R & D programs/
GR  - No. U1909212/NSFC Zhejiang Joint Fund for the Integration of Industrialization 
      and information/
PT  - Journal Article
DEP - 20220905
PL  - Switzerland
TA  - Nanomaterials (Basel)
JT  - Nanomaterials (Basel, Switzerland)
JID - 101610216
PMC - PMC9457965
OTO - NOTNLM
OT  - 5G communication
OT  - bandpass filter
OT  - film bulk acoustic resonator
OT  - single crystal AlN
COIS- The authors declare no conflict of interest.
EDAT- 2022/09/10 06:00
MHDA- 2022/09/10 06:01
PMCR- 2022/09/05
CRDT- 2022/09/09 01:27
PHST- 2022/08/03 00:00 [received]
PHST- 2022/08/29 00:00 [revised]
PHST- 2022/09/01 00:00 [accepted]
PHST- 2022/09/09 01:27 [entrez]
PHST- 2022/09/10 06:00 [pubmed]
PHST- 2022/09/10 06:01 [medline]
PHST- 2022/09/05 00:00 [pmc-release]
AID - nano12173082 [pii]
AID - nanomaterials-12-03082 [pii]
AID - 10.3390/nano12173082 [doi]
PST - epublish
SO  - Nanomaterials (Basel). 2022 Sep 5;12(17):3082. doi: 10.3390/nano12173082.