PMID- 36129428
OWN - NLM
STAT- MEDLINE
DCOM- 20221027
LR  - 20221222
IS  - 1473-0189 (Electronic)
IS  - 1473-0189 (Linking)
VI  - 22
IP  - 21
DP  - 2022 Oct 25
TI  - High sensitivity label-free detection of HER2 using an Al-GaN/GaN high electron 
      mobility transistor-based biosensor.
PG  - 4129-4140
LID - 10.1039/d2lc00349j [doi]
AB  - This work reports rapid, label-free and specific detection of the HER2 antigen 
      using a gallium nitride (GaN) high electron mobility transistor (HEMT). 
      Thiol-based chemistry has been utilized to immobilize the corresponding HER2 
      antibody in the sensing area of the sensor. The formation of a gold-sulfur 
      complex has been confirmed through Raman spectroscopy, giving a peak at around a 
      wavelength of 260 cm(-1). Fourier transform infrared spectroscopy and atomic 
      force microscopy (AFM) also reveal the functionalization of thiol and free 
      carboxylic groups. On-chip enzyme-linked immunosorbent assay has been utilized to 
      confirm immobilization of antibody receptors on the sensing area surface, 
      followed by current-voltage measurement. Morphology of the sensing area using AFM 
      and electrical characterization of the sensor have been recorded before and after 
      each functionalization process step. The sensor shows detection of the HER2 
      antigen in a broad range of 0.7 pg ml(-1) to 10 mug ml(-1)i.e., (5 x 10(-15) to 6 
      x 10(-8) M). A long-time study and reusability aspect of the sensor have also 
      been investigated that show good viability of the sensor. For the first time, a 
      three-binding-site model based on the Langmuir isotherm has been developed for 
      HER2 detection using GaN-HEMTs with three dissociation constants, i.e., 7 x 
      10(-10), 8.8 x 10(-11), and 7.2 x 10(-9) M, respectively.
FAU - Mishra, Shivanshu
AU  - Mishra S
AUID- ORCID: 0000-0002-4015-4181
AD  - CSIR - Central Electronics Engineering Research Institute, Pilani, Rajasthan, 
      India. shivanshuceeri@gmail.com.
AD  - Academy of Scientific and Innovative Research, Ghaziabad, Uttar Pradesh, India.
FAU - Kachhawa, Pharyanshu
AU  - Kachhawa P
AUID- ORCID: 0000-0002-2743-5827
AD  - CSIR - Central Electronics Engineering Research Institute, Pilani, Rajasthan, 
      India. shivanshuceeri@gmail.com.
AD  - Academy of Scientific and Innovative Research, Ghaziabad, Uttar Pradesh, India.
FAU - Jain, Amber Kumar
AU  - Jain AK
AUID- ORCID: 0000-0002-3720-3499
AD  - CSIR - Central Electronics Engineering Research Institute, Pilani, Rajasthan, 
      India. shivanshuceeri@gmail.com.
FAU - Thakur, Rajiv Ranjan
AU  - Thakur RR
AUID- ORCID: 0000-0002-7435-291X
AD  - CSIR - Central Electronics Engineering Research Institute, Pilani, Rajasthan, 
      India. shivanshuceeri@gmail.com.
AD  - Academy of Scientific and Innovative Research, Ghaziabad, Uttar Pradesh, India.
FAU - Chaturvedi, Nidhi
AU  - Chaturvedi N
AD  - CSIR - Central Electronics Engineering Research Institute, Pilani, Rajasthan, 
      India. shivanshuceeri@gmail.com.
AD  - Academy of Scientific and Innovative Research, Ghaziabad, Uttar Pradesh, India.
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20221025
PL  - England
TA  - Lab Chip
JT  - Lab on a chip
JID - 101128948
RN  - 1R9CC3P9VL (gallium nitride)
RN  - 0 (Aluminum Compounds)
RN  - 7440-57-5 (Gold)
RN  - 0 (Sulfhydryl Compounds)
RN  - 70FD1KFU70 (Sulfur)
SB  - IM
MH  - *Transistors, Electronic
MH  - Electrons
MH  - Aluminum Compounds/chemistry
MH  - *Biosensing Techniques/methods
MH  - Gold
MH  - Sulfhydryl Compounds
MH  - Sulfur
EDAT- 2022/09/22 06:00
MHDA- 2022/10/28 06:00
CRDT- 2022/09/21 10:22
PHST- 2022/09/22 06:00 [pubmed]
PHST- 2022/10/28 06:00 [medline]
PHST- 2022/09/21 10:22 [entrez]
AID - 10.1039/d2lc00349j [doi]
PST - epublish
SO  - Lab Chip. 2022 Oct 25;22(21):4129-4140. doi: 10.1039/d2lc00349j.