PMID- 36132553 OWN - NLM STAT- PubMed-not-MEDLINE LR - 20220924 IS - 2516-0230 (Electronic) IS - 2516-0230 (Linking) VI - 3 IP - 6 DP - 2021 Mar 23 TI - Chemical and topographical patterns combined with solution shear for selective-area deposition of highly-aligned semiconducting carbon nanotubes. PG - 1767-1775 LID - 10.1039/d1na00033k [doi] AB - Selective deposition of semiconducting carbon nanotubes (s-CNTs) into densely packed, aligned arrays of individualized s-CNTs is necessary to realize their potential in semiconductor electronics. We report the combination of chemical contrast patterns, topography, and pre-alignment of s-CNTs via shear to achieve selective-area deposition of aligned arrays of s-CNTs. Alternate stripes of surfaces favorable and unfavorable to s-CNT adsorption were patterned with widths varying from 2000 nm down to 100 nm. Addition of topography to the chemical contrast patterns combined with shear enabled the selective-area deposition of arrays of quasi-aligned s-CNTs ( approximately 14 degrees ) even in patterns that are wider than the length of individual nanotubes (>500 nm). When the width of the chemical and topographical contrast patterns is less than the length of individual nanotubes (<500 nm), confinement effects become dominant enabling the selective-area deposition of much more tightly aligned s-CNTs ( approximately 7 degrees ). At a trench width of 100 nm, we demonstrate the lowest standard deviation in alignment degree of 7.6 +/- 0.3 degrees at a deposition shear rate of 4600 s(-1), while maintaining an individualized s-CNT density greater than 30 CNTs mum(-1). Chemical contrast alone enables selective-area deposition, but chemical contrast in addition to topography enables more effective selective-area deposition and stronger confinement effects, with the advantage of removal of nanotubes deposited in spurious areas via selective lift-off of the topographical features. These findings provide a methodology that is inherently scalable, and a means to deposit spatially selective, aligned s-CNT arrays for next-generation semiconducting devices. CI - This journal is (c) The Royal Society of Chemistry. FAU - Dwyer, Jonathan H AU - Dwyer JH AD - Department of Chemical and Biological Engineering, University of Wisconsin-Madison 1415 Engineering Drive Madison WI 53706 USA. FAU - Suresh, Anjali AU - Suresh A AD - Department of Materials Science and Engineering, University of Wisconsin-Madison 1509 University Avenue Madison WI 53706 USA pgopalan@wisc.edu. FAU - Jinkins, Katherine R AU - Jinkins KR AD - Department of Materials Science and Engineering, University of Wisconsin-Madison 1509 University Avenue Madison WI 53706 USA pgopalan@wisc.edu. FAU - Zheng, Xiaoqi AU - Zheng X AD - Department of Materials Science and Engineering, University of Wisconsin-Madison 1509 University Avenue Madison WI 53706 USA pgopalan@wisc.edu. FAU - Arnold, Michael S AU - Arnold MS AD - Department of Materials Science and Engineering, University of Wisconsin-Madison 1509 University Avenue Madison WI 53706 USA pgopalan@wisc.edu. FAU - Berson, Arganthael AU - Berson A AD - Multiphase Flow Visualization and Analysis Laboratory (MFVAL), University of Wisconsin-Madison 1500 Engineering Drive Madison WI 53706 USA arganthael.berson@wisc.edu. FAU - Gopalan, Padma AU - Gopalan P AD - Department of Chemical and Biological Engineering, University of Wisconsin-Madison 1415 Engineering Drive Madison WI 53706 USA. AD - Department of Materials Science and Engineering, University of Wisconsin-Madison 1509 University Avenue Madison WI 53706 USA pgopalan@wisc.edu. LA - eng PT - Journal Article DEP - 20210217 PL - England TA - Nanoscale Adv JT - Nanoscale advances JID - 101738708 PMC - PMC9419110 COIS- There are no conflicts to declare. EDAT- 2021/02/17 00:00 MHDA- 2021/02/17 00:01 PMCR- 2021/02/17 CRDT- 2022/09/22 03:38 PHST- 2021/01/12 00:00 [received] PHST- 2021/02/05 00:00 [accepted] PHST- 2022/09/22 03:38 [entrez] PHST- 2021/02/17 00:00 [pubmed] PHST- 2021/02/17 00:01 [medline] PHST- 2021/02/17 00:00 [pmc-release] AID - d1na00033k [pii] AID - 10.1039/d1na00033k [doi] PST - epublish SO - Nanoscale Adv. 2021 Feb 17;3(6):1767-1775. doi: 10.1039/d1na00033k. eCollection 2021 Mar 23.