PMID- 36209287
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20221011
IS  - 2045-2322 (Electronic)
IS  - 2045-2322 (Linking)
VI  - 12
IP  - 1
DP  - 2022 Oct 8
TI  - Interference effects in GaN high electron mobility transistor power amplifier 
      induced by microwave pulses.
PG  - 16922
LID - 10.1038/s41598-022-21324-y [doi]
LID - 16922
AB  - Owing to the rapid development of wireless communication, radar and pulse power 
      technology, the electromagnetic environment faced by electronic systems is 
      increasingly complex and the intensity of electromagnetic field can be 
      significant. In this study, a new interference phenomenon was observed when the 
      microwave pulses were injected into the gallium nitride (GaN) high electron 
      mobility transistor (HEMT) power amplifier through the output port. We 
      investigated the relationship between the peak power of reverse injection 
      microwave pulses and the duration or the amplitude of the interference by effect 
      experiments. The interference duration could reach the magnitude of millisecond. 
      Deep traps in GaN HEMT power amplifiers are proved to be the cause of this 
      interference effects.
CI  - (c) 2022. The Author(s).
FAU - Zhao, Jingtao
AU  - Zhao J
AD  - Science and Technology on High Power Microwave Laboratory, Institute of Applied 
      Electronics, China Academy of Engineering Physics, Mianyang, 621900, China.
AD  - Key Laboratory of Science and Technology on Complex Electromagnetic Environment, 
      China Academy of Engineering Physics, Mianyang, 621900, China.
FAU - Chen, Quanyou
AU  - Chen Q
AD  - Institute of Electronic Engineering of China Academy of Engineering Physics, 
      Mianyang, 621999, China.
FAU - Chen, Chaoyang
AU  - Chen C
AD  - Science and Technology on High Power Microwave Laboratory, Institute of Applied 
      Electronics, China Academy of Engineering Physics, Mianyang, 621900, China.
AD  - Key Laboratory of Science and Technology on Complex Electromagnetic Environment, 
      China Academy of Engineering Physics, Mianyang, 621900, China.
FAU - Chen, Zhidong
AU  - Chen Z
AD  - Science and Technology on High Power Microwave Laboratory, Institute of Applied 
      Electronics, China Academy of Engineering Physics, Mianyang, 621900, China.
AD  - Key Laboratory of Science and Technology on Complex Electromagnetic Environment, 
      China Academy of Engineering Physics, Mianyang, 621900, China.
FAU - Liu, Zhong
AU  - Liu Z
AD  - Science and Technology on High Power Microwave Laboratory, Institute of Applied 
      Electronics, China Academy of Engineering Physics, Mianyang, 621900, China.
AD  - Key Laboratory of Science and Technology on Complex Electromagnetic Environment, 
      China Academy of Engineering Physics, Mianyang, 621900, China.
FAU - Zhao, Gang
AU  - Zhao G
AD  - Science and Technology on High Power Microwave Laboratory, Institute of Applied 
      Electronics, China Academy of Engineering Physics, Mianyang, 621900, China. 
      zhaogang_106@163.com.
AD  - Key Laboratory of Science and Technology on Complex Electromagnetic Environment, 
      China Academy of Engineering Physics, Mianyang, 621900, China. 
      zhaogang_106@163.com.
LA  - eng
GR  - 61701461/National Natural Science Foundation of China/
GR  - 61701461/National Natural Science Foundation of China/
GR  - 61701461/National Natural Science Foundation of China/
GR  - 61701461/National Natural Science Foundation of China/
GR  - 61701461/National Natural Science Foundation of China/
PT  - Journal Article
DEP - 20221008
PL  - England
TA  - Sci Rep
JT  - Scientific reports
JID - 101563288
SB  - IM
PMC - PMC9547885
COIS- The authors declare no competing interests.
EDAT- 2022/10/09 06:00
MHDA- 2022/10/09 06:01
PMCR- 2022/10/08
CRDT- 2022/10/08 23:37
PHST- 2022/06/22 00:00 [received]
PHST- 2022/09/26 00:00 [accepted]
PHST- 2022/10/08 23:37 [entrez]
PHST- 2022/10/09 06:00 [pubmed]
PHST- 2022/10/09 06:01 [medline]
PHST- 2022/10/08 00:00 [pmc-release]
AID - 10.1038/s41598-022-21324-y [pii]
AID - 21324 [pii]
AID - 10.1038/s41598-022-21324-y [doi]
PST - epublish
SO  - Sci Rep. 2022 Oct 8;12(1):16922. doi: 10.1038/s41598-022-21324-y.