PMID- 36221464
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20221012
IS  - 1094-4087 (Electronic)
IS  - 1094-4087 (Linking)
VI  - 30
IP  - 10
DP  - 2022 May 9
TI  - Electrically controlled terahertz modulator with deep modulation and slow wave 
      effect via a HEMT integrated metasurface.
PG  - 16134-16144
LID - 10.1364/OE.451677 [doi]
AB  - Slow wave and localized field are conducive to terahertz (THz) modulators with 
      deep and fast modulation. Here we propose an electrically controlled THz 
      modulator with slow wave effect and localized field composed of a high electron 
      mobility transistor (HEMT) integrated metasurface. Unlike previously proposed 
      schemes to realize slow wave effect electrically, this proposal controls the 
      resonant modes directly through HEMT switches instead of the surrounding 
      materials, leading to a modulation depth of 96% and a group delay of 10.4ps. The 
      confined electric field where HEMT is embedded, and the slow wave effect, work 
      together to pave a new mechanism for THz modulators with high performance.
FAU - Ran, Jia
AU  - Ran J
FAU - Chen, Tao
AU  - Chen T
FAU - Hao, Honggang
AU  - Hao H
FAU - Wen, Dandan
AU  - Wen D
FAU - Zhang, Xiaolei
AU  - Zhang X
FAU - Ren, Yi
AU  - Ren Y
LA  - eng
PT  - Journal Article
PL  - United States
TA  - Opt Express
JT  - Optics express
JID - 101137103
SB  - IM
EDAT- 2022/10/13 06:00
MHDA- 2022/10/13 06:01
CRDT- 2022/10/12 01:53
PHST- 2022/10/12 01:53 [entrez]
PHST- 2022/10/13 06:00 [pubmed]
PHST- 2022/10/13 06:01 [medline]
AID - 472310 [pii]
AID - 10.1364/OE.451677 [doi]
PST - ppublish
SO  - Opt Express. 2022 May 9;30(10):16134-16144. doi: 10.1364/OE.451677.