PMID- 36296844
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20221030
IS  - 2079-4991 (Print)
IS  - 2079-4991 (Electronic)
IS  - 2079-4991 (Linking)
VI  - 12
IP  - 20
DP  - 2022 Oct 18
TI  - Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors.
LID - 10.3390/nano12203651 [doi]
LID - 3651
AB  - During the last few decades, the microelectronics industry has actively been 
      investigating the potential for the functional integration of semiconductor-based 
      devices beyond digital logic and memory, which includes RF and analog circuits, 
      biochips, and sensors, on the same chip. In the case of gas sensor integration, 
      it is necessary that future devices can be manufactured using a fabrication 
      technology which is also compatible with the processes applied to digital logic 
      transistors. This will likely involve adopting the mature complementary metal 
      oxide semiconductor (CMOS) fabrication technique or a technique which is 
      compatible with CMOS due to the inherent low costs, scalability, and potential 
      for mass production that this technology provides. While chemiresistive 
      semiconductor metal oxide (SMO) gas sensors have been the principal 
      semiconductor-based gas sensor technology investigated in the past, resulting in 
      their eventual commercialization, they need high-temperature operation to provide 
      sufficient energies for the surface chemical reactions essential for the 
      molecular detection of gases in the ambient. Therefore, the integration of a 
      microheater in a MEMS structure is a requirement, which can be quite complex. 
      This is, therefore, undesirable and room temperature, or at least near-room 
      temperature, solutions are readily being investigated and sought after. 
      Room-temperature SMO operation has been achieved using UV illumination, but this 
      further complicates CMOS integration. Recent studies suggest that two-dimensional 
      (2D) materials may offer a solution to this problem since they have a high 
      likelihood for integration with sophisticated CMOS fabrication while also 
      providing a high sensitivity towards a plethora of gases of interest, even at 
      room temperature. This review discusses many types of promising 2D materials 
      which show high potential for integration as channel materials for digital logic 
      field effect transistors (FETs) as well as chemiresistive and FET-based sensing 
      films, due to the presence of a sufficiently wide band gap. This excludes 
      graphene from this review, while recent achievements in gas sensing with graphene 
      oxide, reduced graphene oxide, transition metal dichalcogenides (TMDs), 
      phosphorene, and MXenes are examined.
FAU - Filipovic, Lado
AU  - Filipovic L
AUID- ORCID: 0000-0003-1687-5058
AD  - Institute for Microelectronics, TU Wien, Gusshuasstrasse 27-29/E360, 1040 Vienna, 
      Austria.
FAU - Selberherr, Siegfried
AU  - Selberherr S
AUID- ORCID: 0000-0002-5583-6177
AD  - Institute for Microelectronics, TU Wien, Gusshuasstrasse 27-29/E360, 1040 Vienna, 
      Austria.
LA  - eng
GR  - 878662/Austrian Research Promotion Agency/
PT  - Journal Article
PT  - Review
DEP - 20221018
PL  - Switzerland
TA  - Nanomaterials (Basel)
JT  - Nanomaterials (Basel, Switzerland)
JID - 101610216
PMC - PMC9611560
OTO - NOTNLM
OT  - 2D materials
OT  - CMOS integration
OT  - MXenes
OT  - VOCs
OT  - gas sensing
OT  - graphene oxide
OT  - molybdenum disulfide
OT  - nitrogen dioxide
OT  - phosphorene
OT  - transition metal dichalcogenides (TMDs)
COIS- The authors declare no conflict of interest.
EDAT- 2022/10/28 06:00
MHDA- 2022/10/28 06:01
PMCR- 2022/10/18
CRDT- 2022/10/27 01:46
PHST- 2022/09/05 00:00 [received]
PHST- 2022/09/29 00:00 [revised]
PHST- 2022/10/07 00:00 [accepted]
PHST- 2022/10/27 01:46 [entrez]
PHST- 2022/10/28 06:00 [pubmed]
PHST- 2022/10/28 06:01 [medline]
PHST- 2022/10/18 00:00 [pmc-release]
AID - nano12203651 [pii]
AID - nanomaterials-12-03651 [pii]
AID - 10.3390/nano12203651 [doi]
PST - epublish
SO  - Nanomaterials (Basel). 2022 Oct 18;12(20):3651. doi: 10.3390/nano12203651.