PMID- 36444765
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20221209
LR  - 20221209
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 14
IP  - 48
DP  - 2022 Dec 7
TI  - Multimodal Encapsulation to Selectively Permeate Hydrogen and Engineer Channel 
      Conduction for p-Type SnO(x) Thin-Film Transistor Applications.
PG  - 53999-54011
LID - 10.1021/acsami.2c15719 [doi]
AB  - It has been challenging to synthesize p-type SnO(x) (1 < x < 2) and engineer the 
      electrical properties such as carrier density and mobility due to the narrow 
      processing window and the localized oxygen 2p orbitals near the valence band. 
      Herein, we report on the multifunctional encapsulation of p-SnO(x) to limit the 
      surface adsorption of oxygen and selectively permeate hydrogen into the p-SnO(x) 
      channel for thin-film transistor (TFT) applications. Time-of-flight secondary ion 
      mass spectrometry (ToF-SIMS) measurements identified that ultrathin SiO(2) as a 
      multifunctional encapsulation layer effectively suppressed the oxygen adsorption 
      on the back channel surface of p-SnO(x) and selectively diffused hydrogen across 
      the entire thickness of the channel. Encapsulated p-SnO(x)-based TFTs 
      demonstrated much enhanced channel conductance modulation in response to the gate 
      bias applied, featuring higher on-state current and lower off-state current 
      (on/off ratio > 10(3)), field effect mobility of 3.41 cm(2)/(V s), and threshold 
      voltages of  approximately 5-10 V. The fabricated devices show minimal deviations as small as 
      +/-6% in the TFT performance parameters, which demonstrates good reproducibility of 
      the fabrication process. The relevance between the TFT performance and the 
      effects of hydrogen permeation is discussed in regard to the intrinsic and 
      extrinsic doping mechanisms. Density functional theory calculations reveal that 
      hydrogen-related impurity complexes are in charge of the enhanced channel 
      conductance with gate biases, which further supports the selective permeation of 
      hydrogen through a thin SiO(2) encapsulation.
FAU - Lee, Dong Hun
AU  - Lee DH
AD  - School of Engineering Technology, Purdue University, West Lafayette, 
      Indiana47907, United States.
FAU - Zhang, Yuxuan
AU  - Zhang Y
AD  - School of Engineering Technology, Purdue University, West Lafayette, 
      Indiana47907, United States.
FAU - Chang, Sung-Jin
AU  - Chang SJ
AD  - Center for Analysis & Evaluation, National Nanofab Center, Daejeon34141, Republic 
      of Korea.
FAU - Park, Honghwi
AU  - Park H
AUID- ORCID: 0000-0002-8027-6861
AD  - School of Electronic and Electrical Engineering, Kyungpook National University, 
      Daegu41566, Republic of Korea.
FAU - Kim, Chung Soo
AU  - Kim CS
AD  - Analysis Technical Center, Korea Institute of Ceramic Engineering and Technology, 
      Jinju, Gyeongsangnam-do52851, Republic of Korea.
FAU - Baek, Jinwook
AU  - Baek J
AD  - School of Engineering Technology, Purdue University, West Lafayette, 
      Indiana47907, United States.
FAU - Park, Jeongmin
AU  - Park J
AD  - Analysis Technical Center, Korea Institute of Ceramic Engineering and Technology, 
      Jinju, Gyeongsangnam-do52851, Republic of Korea.
FAU - No, Kwangsoo
AU  - No K
AD  - Department of Materials Science and Engineering, KAIST, Daejeon34141, Republic of 
      Korea.
FAU - Song, Han Wook
AU  - Song HW
AD  - Center for Mass and Related Quantities, Korea Research Institute of Standard and 
      Science, Daejeon34113, Republic of Korea.
FAU - Park, Hongsik
AU  - Park H
AUID- ORCID: 0000-0003-2582-2230
AD  - School of Electronic and Electrical Engineering, Kyungpook National University, 
      Daegu41566, Republic of Korea.
FAU - Lee, Sunghwan
AU  - Lee S
AUID- ORCID: 0000-0001-6688-8995
AD  - School of Engineering Technology, Purdue University, West Lafayette, 
      Indiana47907, United States.
LA  - eng
PT  - Journal Article
DEP - 20221129
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
SB  - IM
OTO - NOTNLM
OT  - SnOx
OT  - doping mechanism
OT  - encapsulation
OT  - hydrogen doping
OT  - p-type oxides
OT  - selective permeation
OT  - thin-film transistors
EDAT- 2022/11/30 06:00
MHDA- 2022/11/30 06:01
CRDT- 2022/11/29 05:33
PHST- 2022/11/30 06:00 [pubmed]
PHST- 2022/11/30 06:01 [medline]
PHST- 2022/11/29 05:33 [entrez]
AID - 10.1021/acsami.2c15719 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2022 Dec 7;14(48):53999-54011. doi: 
      10.1021/acsami.2c15719. Epub 2022 Nov 29.