PMID- 36523155
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20230104
LR  - 20230111
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 14
IP  - 51
DP  - 2022 Dec 28
TI  - Ionic Liquid-Gated Near-Infrared Polymer Phototransistors and Their Persistent 
      Photoconductivity Application in Optical Memory.
PG  - 57082-57091
LID - 10.1021/acsami.2c17737 [doi]
AB  - Organic phototransistors (OPTs) based on polymers have attracted substantial 
      attention due to their excellent signal amplification, significant noise 
      reduction, and solution process. Recently, the near-infrared (NIR) detection 
      becomes urgent for OPTs with the increased demand for biomedicine, medical 
      diagnostics, and health monitoring. To achieve this goal, a low working voltage 
      of the OPTs is highly desirable. Therefore, the traditional dielectric gate can 
      be replaced by an electrolyte gate to form electrolyte-gated organic 
      phototransistors (EGOPTs), which are not only able to work at voltages below 1.0 
      V but also are biocompatible. PCDTPT, one of the most popular narrow band gap 
      donor-acceptor copolymer, has been rarely studied in EGOPTs. In this work, an 
      organic NIR-sensitive EGOPT based on PCDTPT is demonstrated with the detectivity 
      of 7.08 x 10(11) Jones and the photoresponsivity of 3.56 A/W at a low operating 
      voltage. In addition, an existing persistent photoconductivity (PPC) phenomenon 
      was also observed when the device was exposed to air. The PPC characteristic of 
      the EGOPT in air has been used to achieve a phototransistor memory, and the gate 
      bias can directly eliminate the PPC as an erasing operation. This work reveals 
      the underlying mechanism of the electrolyte-gated organic phototransistor 
      memories and broadens the application of the EGOPTs.
FAU - Sun, Jun
AU  - Sun J
AD  - Key Laboratory of Luminescence and Optical Information, Ministry of Education, 
      Institute of Optoelectronic Technology, Beijing Jiaotong University, 
      Beijing100044, P.R. China.
FAU - Jiang, Jingzan
AU  - Jiang J
AD  - Key Laboratory of Luminescence and Optical Information, Ministry of Education, 
      Institute of Optoelectronic Technology, Beijing Jiaotong University, 
      Beijing100044, P.R. China.
FAU - Deng, Yadan
AU  - Deng Y
AD  - Key Laboratory of Luminescence and Optical Information, Ministry of Education, 
      Institute of Optoelectronic Technology, Beijing Jiaotong University, 
      Beijing100044, P.R. China.
FAU - Wang, Yunuan
AU  - Wang Y
AD  - Key Laboratory of Luminescence and Optical Information, Ministry of Education, 
      Institute of Optoelectronic Technology, Beijing Jiaotong University, 
      Beijing100044, P.R. China.
FAU - Li, Ling
AU  - Li L
AD  - Key Laboratory of Luminescence and Optical Information, Ministry of Education, 
      Institute of Optoelectronic Technology, Beijing Jiaotong University, 
      Beijing100044, P.R. China.
FAU - Lou, Zhidong
AU  - Lou Z
AUID- ORCID: 0000-0002-1887-844X
AD  - Key Laboratory of Luminescence and Optical Information, Ministry of Education, 
      Institute of Optoelectronic Technology, Beijing Jiaotong University, 
      Beijing100044, P.R. China.
FAU - Hou, Yanbing
AU  - Hou Y
AUID- ORCID: 0000-0002-1485-087X
AD  - Key Laboratory of Luminescence and Optical Information, Ministry of Education, 
      Institute of Optoelectronic Technology, Beijing Jiaotong University, 
      Beijing100044, P.R. China.
FAU - Teng, Feng
AU  - Teng F
AD  - Key Laboratory of Luminescence and Optical Information, Ministry of Education, 
      Institute of Optoelectronic Technology, Beijing Jiaotong University, 
      Beijing100044, P.R. China.
FAU - Hu, Yufeng
AU  - Hu Y
AUID- ORCID: 0000-0002-8961-3385
AD  - Key Laboratory of Luminescence and Optical Information, Ministry of Education, 
      Institute of Optoelectronic Technology, Beijing Jiaotong University, 
      Beijing100044, P.R. China.
LA  - eng
PT  - Journal Article
DEP - 20221215
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
SB  - IM
OTO - NOTNLM
OT  - erasure
OT  - ionic liquid-gated organic phototransistor (ILGOPT)
OT  - memory
OT  - near-infrared (NIR)
OT  - persistent photoconductivity (PPC)
EDAT- 2022/12/17 06:00
MHDA- 2022/12/17 06:01
CRDT- 2022/12/16 01:43
PHST- 2022/12/17 06:00 [pubmed]
PHST- 2022/12/17 06:01 [medline]
PHST- 2022/12/16 01:43 [entrez]
AID - 10.1021/acsami.2c17737 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2022 Dec 28;14(51):57082-57091. doi: 
      10.1021/acsami.2c17737. Epub 2022 Dec 15.