PMID- 36556876
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20230308
IS  - 1996-1944 (Print)
IS  - 1996-1944 (Electronic)
IS  - 1996-1944 (Linking)
VI  - 15
IP  - 24
DP  - 2022 Dec 19
TI  - Remarkable Reduction in I(G) with an Explicit Investigation of the Leakage 
      Conduction Mechanisms in a Dual Surface-Modified Al(2)O(3)/SiO(2) Stack Layer 
      AlGaN/GaN MOS-HEMT.
LID - 10.3390/ma15249067 [doi]
LID - 9067
AB  - We demonstrated the performance of an Al2O3/SiO2 stack layer AlGaN/GaN 
      metal-oxide semiconductor (MOS) high-electron-mobility transistor (HEMT) combined 
      with a dual surface treatment that used tetramethylammonium hydroxide (TMAH) and 
      hydrochloric acid (HCl) with post-gate annealing (PGA) modulation at 400  degrees C for 
      10 min. A remarkable reduction in the reverse gate leakage current (IG) up to 
      1.5x10-12 A/mm (@ VG = -12 V) was observed in the stack layer MOS-HEMT due to the 
      combined treatment. The performance of the dual surface-treated MOS-HEMT was 
      significantly improved, particularly in terms of hysteresis, gate leakage, and 
      subthreshold characteristics, with optimized gate annealing treatment. In 
      addition, an organized gate leakage conduction mechanism in the AlGaN/GaN 
      MOS-HEMT with the Al2O3/SiO2 stack gate dielectric layer was investigated before 
      and after gate annealing treatment and compared with the conventional Schottky 
      gate. The conduction mechanism in the reverse gate bias was Poole-Frankel 
      emission for the Schottky-gate HEMT and the MOS-HEMT before annealing. The 
      dominant conduction mechanism was ohmic/Poole-Frankel at low/medium forward bias. 
      Meanwhile, gate leakage was governed by the hopping conduction mechanism in the 
      MOS-HEMT without gate annealing modulation at a higher forward bias. After 
      post-gate annealing (PGA) treatment, however, the leakage conduction mechanism 
      was dominated by trap-assisted tunneling at the low to medium forward bias region 
      and by Fowler-Nordheim tunneling at the higher forward bias region. Moreover, a 
      decent product of maximum oscillation frequency and gate length (fmax x LG) was 
      found to reach 27.16 GHz∙microm for the stack layer MOS-HEMT with PGA modulation. The 
      dual surface-treated Al2O3/SiO2 stack layer MOS-HEMT with PGA modulation 
      exhibited decent performance with an IDMAX of 720 mA/mm, a peak extrinsic 
      transconductance (GMMAX) of 120 mS/mm, a threshold voltage (VTH) of -4.8 V, a 
      higher ION/IOFF ratio of approximately 1.2x109, a subthreshold swing of 82 
      mV/dec, and a cutoff frequency(ft)/maximum frequency of (fmax) of 7.5/13.58 GHz.
FAU - Mazumder, Soumen
AU  - Mazumder S
AUID- ORCID: 0000-0002-4386-4752
AD  - Department of Electrical Engineering, Institute of Microelectronics, National 
      Cheng-Kung University, Tainan 701, Taiwan.
FAU - Pal, Parthasarathi
AU  - Pal P
AUID- ORCID: 0000-0002-4888-9596
AD  - Department of Electrical Engineering, Institute of Microelectronics, National 
      Cheng-Kung University, Tainan 701, Taiwan.
FAU - Lee, Kuan-Wei
AU  - Lee KW
AUID- ORCID: 0000-0002-1065-0889
AD  - Department of Electronic Engineering, I-Shou University, Kaohsiung 840, Taiwan.
FAU - Wang, Yeong-Her
AU  - Wang YH
AUID- ORCID: 0000-0002-5898-7229
AD  - Department of Electrical Engineering, Institute of Microelectronics, National 
      Cheng-Kung University, Tainan 701, Taiwan.
LA  - eng
GR  - MOST 106-2221-E-006-219-MY3/Ministry of Science and Technology, Taiwan/
GR  - MOST 109-2221-E-06-075-MY2/Ministry of Science and Technology/
GR  - 109S0172/Transcom Inc., Taiwan/
GR  - 2021-T-01/Materials Analysis Technology Inc./
PT  - Journal Article
DEP - 20221219
PL  - Switzerland
TA  - Materials (Basel)
JT  - Materials (Basel, Switzerland)
JID - 101555929
PMC - PMC9788628
OTO - NOTNLM
OT  - Al2O3/SiO2
OT  - AlGaN/GaN
OT  - MOS-HEMT
OT  - post-gate annealing (PGA)
COIS- The authors declare no conflict of interest.
EDAT- 2022/12/24 06:00
MHDA- 2022/12/24 06:01
PMCR- 2022/12/19
CRDT- 2022/12/23 01:43
PHST- 2022/10/25 00:00 [received]
PHST- 2022/11/25 00:00 [revised]
PHST- 2022/12/14 00:00 [accepted]
PHST- 2022/12/23 01:43 [entrez]
PHST- 2022/12/24 06:00 [pubmed]
PHST- 2022/12/24 06:01 [medline]
PHST- 2022/12/19 00:00 [pmc-release]
AID - ma15249067 [pii]
AID - materials-15-09067 [pii]
AID - 10.3390/ma15249067 [doi]
PST - epublish
SO  - Materials (Basel). 2022 Dec 19;15(24):9067. doi: 10.3390/ma15249067.