PMID- 36557432
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20221227
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 13
IP  - 12
DP  - 2022 Dec 1
TI  - Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN 
      High-Electron-Mobility Transistor (HEMT) Applications: A Review.
LID - 10.3390/mi13122133 [doi]
LID - 2133
AB  - The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) 
      devices has the potential to deliver high power and high frequency with 
      performances surpassing mainstream silicon and other advanced semiconductor 
      field-effect transistor (FET) technologies. Nevertheless, HEMT devices suffer 
      from certain parasitic and reliability concerns that limit their performance. 
      This paper aims to review the latest experimental evidence regarding HEMT 
      technologies on the parasitic issues that affect aluminum gallium nitride 
      (AlGaN)/GaN HEMTs. The first part of this review provides a brief introduction to 
      AlGaN/GaN HEMT technologies, and the second part outlines the challenges often 
      faced during HEMT fabrication, such as normally-on operation, self-heating 
      effects, current collapse, peak electric field distribution, gate leakages, and 
      high ohmic contact resistance. Finally, a number of effective approaches to 
      enhancing the device's performance are addressed.
FAU - Haziq, Muhaimin
AU  - Haziq M
AUID- ORCID: 0000-0003-0667-8683
AD  - Institute of Nano Optoelectronics Research and Technology (INOR), Universiti 
      Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia.
FAU - Falina, Shaili
AU  - Falina S
AUID- ORCID: 0000-0003-0875-9903
AD  - Collaborative Microelectronic Design Excellence Center (CEDEC), Universiti Sains 
      Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia.
AD  - Faculty of Science and Engineering, Waseda University, Tokyo 169-8555, Japan.
FAU - Manaf, Asrulnizam Abd
AU  - Manaf AA
AUID- ORCID: 0000-0002-6198-263X
AD  - Collaborative Microelectronic Design Excellence Center (CEDEC), Universiti Sains 
      Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia.
FAU - Kawarada, Hiroshi
AU  - Kawarada H
AD  - Faculty of Science and Engineering, Waseda University, Tokyo 169-8555, Japan.
AD  - The Kagami Memorial Laboratory for Materials Science and Technology, Waseda 
      University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051, Japan.
FAU - Syamsul, Mohd
AU  - Syamsul M
AUID- ORCID: 0000-0002-3236-3303
AD  - Institute of Nano Optoelectronics Research and Technology (INOR), Universiti 
      Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia.
AD  - Faculty of Science and Engineering, Waseda University, Tokyo 169-8555, Japan.
LA  - eng
GR  - 304/CINOR/6501128/A119/AUN/SEED-NET JICA/
PT  - Journal Article
PT  - Review
DEP - 20221201
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC9785762
OTO - NOTNLM
OT  - 2DEG
OT  - GaN
OT  - HEMTs
OT  - challenges
OT  - opportunities
COIS- The authors declare no conflict of interest.
EDAT- 2022/12/24 06:00
MHDA- 2022/12/24 06:01
PMCR- 2022/12/01
CRDT- 2022/12/23 01:46
PHST- 2022/06/29 00:00 [received]
PHST- 2022/07/23 00:00 [revised]
PHST- 2022/08/04 00:00 [accepted]
PHST- 2022/12/23 01:46 [entrez]
PHST- 2022/12/24 06:00 [pubmed]
PHST- 2022/12/24 06:01 [medline]
PHST- 2022/12/01 00:00 [pmc-release]
AID - mi13122133 [pii]
AID - micromachines-13-02133 [pii]
AID - 10.3390/mi13122133 [doi]
PST - epublish
SO  - Micromachines (Basel). 2022 Dec 1;13(12):2133. doi: 10.3390/mi13122133.