PMID- 36584385
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20230120
LR  - 20230120
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 34
IP  - 13
DP  - 2023 Jan 20
TI  - Ultrasensitive self-powered heterojunction ultraviolet photodetector of p-GaN 
      nanowires on Si by halide chemical vapour deposition.
LID - 10.1088/1361-6528/acaf36 [doi]
AB  - In this study, we report the fabrication of quasi-aligned p-GaN nanowires (NWs) 
      on n-Si (1 1 1) substrate by halide chemical vapour deposition (HCVD) using 
      MgCl(2)precursor and followed by low-energy electron beam irradiation to activate 
      the Mg acceptor doping in GaN NWs. We aimed to attain a comprehensive 
      understanding of p-doping in GaN NWs growth, extensive characterizations and 
      fabrication of UV photodetector (PDs) based on p-GaN NWs/n-Si heterojunction. To 
      realize the efficient UV photodetectors, we measure the current-voltage (I-V) 
      characteristics of heterojunction PDs under dark and illuminated conditions and 
      theI-Vcurve demonstrates good rectifying behaviours with 0.2 V turn-on voltage. 
      At zero bias, the heterojunction PDs show a reverse photocurrent of 1.27 x 
      10(-6)A with a very low dark current of 2.35 x 10(-9)A under 325 nm UV 
      illumination. Besides, the significance of the self-powered operation of UV PDs 
      and the charge transfer mechanism are discussed with the aid of the energy band 
      diagram. The substantial photocurrent increment with varying applied potential 
      leads to narrowing the photo potential in the interface. The excitonic bound 
      states present in p-GaN NWs/n-Si heterojunction is further elucidated. As a 
      result, the heterojunction PDs demonstrate the high responsivity, detectivity, 
      and external quantum efficiency of 134 mA W(-1), 3.73 x 10(13)Jones, and 51% 
      respectively, at 0.1 V low applied potential under the reverse bias condition. 
      The proposed work provides an archetype for Mg doping in GaN NWs ensembles, which 
      will help to facilitate the heterojunction with n-Si to unleash the potential of 
      self-powered UV PDs.
CI  - (c) 2023 IOP Publishing Ltd.
FAU - Anbarasan, N
AU  - Anbarasan N
AUID- ORCID: 0000-0001-5994-4231
AD  - Centre for Nanoscience and Nanotechnology, Department of Physics, Bharathidasan 
      University, Tiruchirappalli 620 024, India.
FAU - Sadhasivam, S
AU  - Sadhasivam S
AUID- ORCID: 0000-0002-6572-8962
AD  - Centre for Nanoscience and Nanotechnology, Department of Physics, Bharathidasan 
      University, Tiruchirappalli 620 024, India.
FAU - Jeganathan, K
AU  - Jeganathan K
AUID- ORCID: 0000-0003-4102-3439
AD  - Centre for Nanoscience and Nanotechnology, Department of Physics, Bharathidasan 
      University, Tiruchirappalli 620 024, India.
LA  - eng
PT  - Journal Article
DEP - 20230120
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
SB  - IM
OTO - NOTNLM
OT  - halide chemical vapour deposition
OT  - heterojunction
OT  - nanowires
OT  - p-GaN
OT  - photodetector
OT  - self-power operation
EDAT- 2022/12/31 06:00
MHDA- 2022/12/31 06:01
CRDT- 2022/12/30 17:22
PHST- 2022/08/26 00:00 [received]
PHST- 2022/12/29 00:00 [accepted]
PHST- 2022/12/31 06:00 [pubmed]
PHST- 2022/12/31 06:01 [medline]
PHST- 2022/12/30 17:22 [entrez]
AID - 10.1088/1361-6528/acaf36 [doi]
PST - epublish
SO  - Nanotechnology. 2023 Jan 20;34(13). doi: 10.1088/1361-6528/acaf36.