PMID- 36657161
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20230203
LR  - 20230203
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 34
IP  - 15
DP  - 2023 Feb 3
TI  - Dislocation characterization inc-plane GaN epitaxial layers on 6 inch Si wafer 
      with a fast second-harmonic generation intensity mapping technique.
LID - 10.1088/1361-6528/acb4a0 [doi]
AB  - Second harmonic generation (SHG) intensity, Raman scattering stress, 
      photoluminescence and reflected interference pattern are used to determine the 
      distributions of threading dislocations (TDs) and horizontal dislocations (HDs) 
      in thec-plane GaN epitaxial layers on 6 inch Si wafer which is a structure of 
      high electron mobility transistor (HEMT). The Raman scattering spectra show that 
      the TD and HD result in the tensile stress and compressive stress in the GaN 
      epitaxial layers, respectively. Besides, the SHG intensity is confirmed that to 
      be proportional to the stress value of GaN epitaxial layers, which explains the 
      spatial distribution of SHG intensity for the first time. It is noted that the 
      dislocation-mediated SHG intensity mapping image of the GaN epitaxial layers on 6 
      inch Si wafer can be obtained within 2 h, which can be used in the optimization 
      of high-performance GaN based HEMTs.
CI  - (c) 2023 IOP Publishing Ltd.
FAU - Chiang, Shou-En
AU  - Chiang SE
AD  - Department of Physics, Chung Yuan Christian University, Taoyuan 320314, Taiwan, 
      ROC.
AD  - Research Center for Semiconductor Materials & Advanced Optics, Chung Yuan 
      Christian University, Taoyuan 320314, Taiwan, ROC.
FAU - Chang, Wen-Hsin
AU  - Chang WH
AD  - Department of Physics, Chung Yuan Christian University, Taoyuan 320314, Taiwan, 
      ROC.
FAU - Chen, Yu-Ting
AU  - Chen YT
AD  - Department of Physics, Chung Yuan Christian University, Taoyuan 320314, Taiwan, 
      ROC.
FAU - Li, Wen-Chung
AU  - Li WC
AD  - Department of Physics, Chung Yuan Christian University, Taoyuan 320314, Taiwan, 
      ROC.
AD  - Wafer Works Corporation, Taoyuan 32542, Taiwan, ROC.
AD  - LEAP Semiconductor Corporation, Taoyuan 33045, Taiwan, ROC.
FAU - Yuan, Chi-Tsu
AU  - Yuan CT
AUID- ORCID: 0000-0003-3790-9376
AD  - Department of Physics, Chung Yuan Christian University, Taoyuan 320314, Taiwan, 
      ROC.
AD  - Research Center for Semiconductor Materials & Advanced Optics, Chung Yuan 
      Christian University, Taoyuan 320314, Taiwan, ROC.
FAU - Shen, Ji-Lin
AU  - Shen JL
AUID- ORCID: 0000-0002-6211-5247
AD  - Department of Physics, Chung Yuan Christian University, Taoyuan 320314, Taiwan, 
      ROC.
AD  - Research Center for Semiconductor Materials & Advanced Optics, Chung Yuan 
      Christian University, Taoyuan 320314, Taiwan, ROC.
FAU - Chang, Sheng Hsiung
AU  - Chang SH
AUID- ORCID: 0000-0003-1488-1649
AD  - Department of Physics, Chung Yuan Christian University, Taoyuan 320314, Taiwan, 
      ROC.
AD  - Research Center for Semiconductor Materials & Advanced Optics, Chung Yuan 
      Christian University, Taoyuan 320314, Taiwan, ROC.
LA  - eng
PT  - Journal Article
DEP - 20230203
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
SB  - IM
OTO - NOTNLM
OT  - GaN
OT  - Raman stress
OT  - dislocations
OT  - photoluminescence
OT  - second harmonic generation intensity
EDAT- 2023/01/20 06:00
MHDA- 2023/01/20 06:01
CRDT- 2023/01/19 17:22
PHST- 2022/11/17 00:00 [received]
PHST- 2023/01/19 00:00 [accepted]
PHST- 2023/01/20 06:00 [pubmed]
PHST- 2023/01/20 06:01 [medline]
PHST- 2023/01/19 17:22 [entrez]
AID - 10.1088/1361-6528/acb4a0 [doi]
PST - epublish
SO  - Nanotechnology. 2023 Feb 3;34(15). doi: 10.1088/1361-6528/acb4a0.