PMID- 36677229
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20230201
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 14
IP  - 1
DP  - 2023 Jan 9
TI  - A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High 
      Frequency and Low-Voltage-Control High Electron Mobility Transistor Application.
LID - 10.3390/mi14010168 [doi]
LID - 168
AB  - The effects of barrier layer thickness, Al component of barrier layer, and 
      passivation layer thickness of high-resistance Si (111)-based AlGaN/GaN 
      heterojunction epitaxy on the knee-point voltage (V(knee)), saturation current 
      density (I(d-sat)), and cut-off frequency (f(t)) of its high electron mobility 
      transistor (HEMT) are simulated and analyzed. A novel optimization factor OPTIM 
      is proposed by considering the various performance parameters of the device to 
      reduce the V(knee) and improve the I(d-sat) on the premise of ensuring the f(t). 
      Based on this factor, the optimized AlGaN/GaN epitaxial structure was designed 
      with a barrier layer thickness of 20 nm, an Al component in the barrier layer of 
      25%, and a SiN passivation layer of 6 nm. By simulation, when the gate voltage 
      V(g) is 0 V, the designed device with a gate length of 0.15 mum, gate-source 
      spacing of 0.5 mum, and gate-drain spacing of 1 mum presents a high I(d-sat) of 750 
      mA/mm and a low V(knee) of 2.0 V and presents f(t) and maximum frequency (f(max)) 
      as high as 110 GHz and 220 GHz, respectively. The designed device was fabricated 
      and tested to verify the simulation results. We demonstrated the optimization 
      factor OPTIM can provide an effective design method for follow-up high-frequency 
      and low-voltage applications of GaN devices.
FAU - Guan, He
AU  - Guan H
AUID- ORCID: 0000-0002-4341-1470
AD  - School of Microelectronics, Northwestern Polytechnical University, Xi'an 710129, 
      China.
FAU - Shen, Guiyu
AU  - Shen G
AD  - School of Microelectronics, Northwestern Polytechnical University, Xi'an 710129, 
      China.
FAU - Liu, Shibin
AU  - Liu S
AD  - School of Electronics and Information, Northwestern Polytechnical University, 
      Xi'an 710129, China.
FAU - Jiang, Chengyu
AU  - Jiang C
AD  - School of Electronics and Information, Northwestern Polytechnical University, 
      Xi'an 710129, China.
FAU - Wu, Jingbo
AU  - Wu J
AD  - School of Microelectronics, Northwestern Polytechnical University, Xi'an 710129, 
      China.
LA  - eng
GR  - 62004164/Youth Program of National Natural Science Foundation of China/
PT  - Journal Article
DEP - 20230109
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC9863697
OTO - NOTNLM
OT  - AlGaN/GaN epitaxy
OT  - HEMT
OT  - simulation
COIS- The authors declare no conflict of interest.
EDAT- 2023/01/22 06:00
MHDA- 2023/01/22 06:01
PMCR- 2023/01/09
CRDT- 2023/01/21 01:40
PHST- 2022/10/19 00:00 [received]
PHST- 2022/12/01 00:00 [revised]
PHST- 2023/01/06 00:00 [accepted]
PHST- 2023/01/21 01:40 [entrez]
PHST- 2023/01/22 06:00 [pubmed]
PHST- 2023/01/22 06:01 [medline]
PHST- 2023/01/09 00:00 [pmc-release]
AID - mi14010168 [pii]
AID - micromachines-14-00168 [pii]
AID - 10.3390/mi14010168 [doi]
PST - epublish
SO  - Micromachines (Basel). 2023 Jan 9;14(1):168. doi: 10.3390/mi14010168.