PMID- 36703509
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20230413
LR  - 20230413
IS  - 1613-6829 (Electronic)
IS  - 1613-6810 (Linking)
VI  - 19
IP  - 15
DP  - 2023 Apr
TI  - 1D and 2D Field Effect Transistors in Gas Sensing: A Comprehensive Review.
PG  - e2206100
LID - 10.1002/smll.202206100 [doi]
AB  - Rapid progress in the synthesis and fundamental understanding of 1D and 2D 
      materials have solicited the incorporation of these nanomaterials into sensor 
      architectures, especially field effect transistors (FETs), for the monitoring of 
      gas and vapor in environmental, food quality, and healthcare applications. Yet, 
      several challenges have remained unaddressed toward the fabrication of 1D and 2D 
      FET gas sensors for real-field applications, which are related to properties, 
      synthesis, and integration of 1D and 2D materials into the transistor 
      architecture. This review paper encompasses the whole assortment of 1D-i.e., 
      metal oxide semiconductors (MOXs), silicon nanowires (SiNWs), carbon nanotubes 
      (CNTs)-and 2D-i.e., graphene, transition metal dichalcogenides (TMD), 
      phosphorene-materials used in FET gas sensors, critically dissecting how the 
      material synthesis, surface functionalization, and transistor fabrication impact 
      on electrical versus sensing properties of these devices. Eventually, pros and 
      cons of 1D and 2D FETs for gas and vapor sensing applications are discussed, 
      pointing out weakness and highlighting future directions.
CI  - (c) 2023 Wiley-VCH GmbH.
FAU - Paghi, Alessandro
AU  - Paghi A
AD  - Dipartimento di Ingegneria dell'Informazione, via G. Caruso 16, Pisa, 56122, 
      Italy.
FAU - Mariani, Stefano
AU  - Mariani S
AD  - Dipartimento di Ingegneria dell'Informazione, via G. Caruso 16, Pisa, 56122, 
      Italy.
FAU - Barillaro, Giuseppe
AU  - Barillaro G
AUID- ORCID: 0000-0001-6197-4851
AD  - Dipartimento di Ingegneria dell'Informazione, via G. Caruso 16, Pisa, 56122, 
      Italy.
LA  - eng
PT  - Journal Article
PT  - Review
DEP - 20230126
PL  - Germany
TA  - Small
JT  - Small (Weinheim an der Bergstrasse, Germany)
JID - 101235338
SB  - IM
OTO - NOTNLM
OT  - 1D and 2D materials
OT  - carbon nanotubes
OT  - field effect transistors (FETs)
OT  - gas sensors
OT  - graphene
EDAT- 2023/01/28 06:00
MHDA- 2023/01/28 06:01
CRDT- 2023/01/27 01:23
PHST- 2022/12/04 00:00 [revised]
PHST- 2022/10/05 00:00 [received]
PHST- 2023/01/28 06:01 [medline]
PHST- 2023/01/28 06:00 [pubmed]
PHST- 2023/01/27 01:23 [entrez]
AID - 10.1002/smll.202206100 [doi]
PST - ppublish
SO  - Small. 2023 Apr;19(15):e2206100. doi: 10.1002/smll.202206100. Epub 2023 Jan 26.