PMID- 36771000
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20230213
LR  - 20231106
IS  - 1420-3049 (Electronic)
IS  - 1420-3049 (Linking)
VI  - 28
IP  - 3
DP  - 2023 Jan 30
TI  - A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n 
      Heterojunction.
LID - 10.3390/molecules28031334 [doi]
LID - 1334
AB  - Diamond holds promise for optoelectronic devices working in high-frequency, 
      high-power and high-temperature environments, for example in some aspect of 
      nuclear energetics industry processing and aerospace due to its wide bandgap (5.5 
      eV), ultimate thermal conductivity, high-pressure resistance, high radio 
      frequency and high chemical stability. In the last several years, p-type B-doped 
      diamond (BDD) has been fabricated to heterojunctions with all kinds of non-metal 
      oxide (AlN, GaN, Si and carbon-based semiconductors) to form heterojunctions, 
      which may be widely utilized in various optoelectronic device technology. This 
      article discusses the application of diamond-based heterostructures and mainly 
      writes about optoelectronic device fabrication, optoelectronic performance 
      research, LEDs, photodetectors, and high-electron mobility transistor (HEMT) 
      device applications based on diamond non-metal oxide (AlN, GaN, Si and 
      carbon-based semiconductor) heterojunction. The discussion in this paper will 
      provide a new scheme for the improvement of high-temperature diamond-based 
      optoelectronics.
FAU - Sang, Xianhe
AU  - Sang X
AD  - Shandong Key Laboratory of Optical Communication Science and Technology, School 
      of Physics Science and Information Technology, Liaocheng University, Liaocheng 
      252000, China.
AD  - Ulsan Ship and Ocean College, Ludong University, Yantai 264000, China.
FAU - Wang, Yongfu
AU  - Wang Y
AD  - Shandong Key Laboratory of Optical Communication Science and Technology, School 
      of Physics Science and Information Technology, Liaocheng University, Liaocheng 
      252000, China.
FAU - Wang, Qinglin
AU  - Wang Q
AD  - Shandong Key Laboratory of Optical Communication Science and Technology, School 
      of Physics Science and Information Technology, Liaocheng University, Liaocheng 
      252000, China.
AD  - Shandong Liaocheng Laixin Powder Materials Science and Technology Co., Ltd., 
      Liaocheng 252000, China.
FAU - Zou, Liangrui
AU  - Zou L
AD  - Shandong Key Laboratory of Optical Communication Science and Technology, School 
      of Physics Science and Information Technology, Liaocheng University, Liaocheng 
      252000, China.
FAU - Ge, Shunhao
AU  - Ge S
AD  - Shandong Key Laboratory of Optical Communication Science and Technology, School 
      of Physics Science and Information Technology, Liaocheng University, Liaocheng 
      252000, China.
FAU - Yao, Yu
AU  - Yao Y
AD  - Shandong Key Laboratory of Optical Communication Science and Technology, School 
      of Physics Science and Information Technology, Liaocheng University, Liaocheng 
      252000, China.
FAU - Wang, Xueting
AU  - Wang X
AD  - Shandong Key Laboratory of Optical Communication Science and Technology, School 
      of Physics Science and Information Technology, Liaocheng University, Liaocheng 
      252000, China.
FAU - Fan, Jianchao
AU  - Fan J
AD  - Shandong Liaocheng Laixin Powder Materials Science and Technology Co., Ltd., 
      Liaocheng 252000, China.
FAU - Sang, Dandan
AU  - Sang D
AD  - Shandong Key Laboratory of Optical Communication Science and Technology, School 
      of Physics Science and Information Technology, Liaocheng University, Liaocheng 
      252000, China.
AD  - Shandong Liaocheng Laixin Powder Materials Science and Technology Co., Ltd., 
      Liaocheng 252000, China.
LA  - eng
GR  - 62104090/National Natural Science Foundation of China/
GR  - 11604133/National Natural Science Foundation of China/
GR  - ZR2017QA013/Natural Science Foundation of Shandong Province/
GR  - 2019KJJ019/Science and Technology Plan of Youth Innovation Team for Universities 
      of Shandong Province/
GR  - 201503/Introduction and Cultivation Plan of Youth Innovation Talents for 
      Universities of Shandong Province, the Open Project of State Key Laboratory of 
      Superhard Materials/
GR  - 201612/Introduction and Cultivation Plan of Youth Innovation Talents for 
      Universities of Shandong Province, the Open Project of State Key Laboratory of 
      Superhard Materials/
GR  - 318012016/Research Funding of Liaocheng University/
GR  - 318051610/Research Funding of Liaocheng University/
GR  - 318052136/Research Funding of Liaocheng University/
GR  - 318051612/Research Funding of Liaocheng University/
PT  - Journal Article
PT  - Review
DEP - 20230130
PL  - Switzerland
TA  - Molecules
JT  - Molecules (Basel, Switzerland)
JID - 100964009
SB  - IM
PMC - PMC9921172
OTO - NOTNLM
OT  - diamond
OT  - heterojunction
OT  - nonmetallic oxide
OT  - optoelectronic devices
COIS- The authors declare no conflict of interest.
EDAT- 2023/02/12 06:00
MHDA- 2023/02/12 06:01
PMCR- 2023/01/30
CRDT- 2023/02/11 01:35
PHST- 2022/11/28 00:00 [received]
PHST- 2022/12/16 00:00 [revised]
PHST- 2022/12/17 00:00 [accepted]
PHST- 2023/02/11 01:35 [entrez]
PHST- 2023/02/12 06:00 [pubmed]
PHST- 2023/02/12 06:01 [medline]
PHST- 2023/01/30 00:00 [pmc-release]
AID - molecules28031334 [pii]
AID - molecules-28-01334 [pii]
AID - 10.3390/molecules28031334 [doi]
PST - epublish
SO  - Molecules. 2023 Jan 30;28(3):1334. doi: 10.3390/molecules28031334.