PMID- 36791232
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20230302
LR  - 20230302
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 15
IP  - 8
DP  - 2023 Mar 1
TI  - Heavy Ion Displacement Damage Effect in Carbon Nanotube Field Effect Transistors.
PG  - 10936-10946
LID - 10.1021/acsami.2c20005 [doi]
AB  - Recent advances in carbon nanotube (CNT)-based integrated circuits have shown 
      their potential in deep space exploration. In this work, the mechanism governing 
      the heavy-ion-induced displacement damage (DD) effect in semiconducting 
      single-walled CNT field effect transistors (FETs), which is one of the factors 
      limiting device robustness in space, was first and thoroughly investigated. CNT 
      FETs irradiated by a Xe ion fluence of 10(12) ions/cm(2) can maintain a high 
      on/off current ratio, while transistors' performance failure is observed as the 
      ion fluence increased to 5 x 10(12) ions/cm(2). Controllable experiments combined 
      with numerical simulations revealed that the degradation mechanism changed as the 
      nonionizing radiation energy built up. The trap generation in the gate 
      dielectric, instead of the CNT channel, was identified as the dominating factor 
      for the high-energy-radiation-induced device failure. Therefore, CNT FETs 
      exhibited a >10x higher DD tolerance than that of Si devices, which was limited 
      by the channel damage under irradiation. More importantly, the distinct failure 
      mechanism determined that CNT FETs can maintain a high DD tolerance of 2.8 x 
      10(13) MeV/g as the technology node scales down to 45 nm node, suggesting the 
      potential of CNT-based VLSI for high-performance and high-robustness space 
      applications.
FAU - Lu, Peng
AU  - Lu P
AUID- ORCID: 0000-0001-8704-7159
AD  - Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, China.
FAU - Zhu, Maguang
AU  - Zhu M
AD  - Key Laboratory for the Physics and Chemistry of Nanodevices and Center for 
      Carbon-based Electronics, School of Electronics, Peking University, Beijing 
      100871, China.
AD  - School of Integrated Circuits, Nanjing University, Qixia District, Nanjing, 
      Jiangsu 210023, China.
FAU - Zhao, Peixiong
AU  - Zhao P
AUID- ORCID: 0000-0003-4321-0158
AD  - Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China.
FAU - Fan, Chenwei
AU  - Fan C
AD  - Key Laboratory for the Physics and Chemistry of Nanodevices and Center for 
      Carbon-based Electronics, School of Electronics, Peking University, Beijing 
      100871, China.
FAU - Zhu, Huiping
AU  - Zhu H
AD  - Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, China.
FAU - Gao, Jiantou
AU  - Gao J
AUID- ORCID: 0000-0003-1353-0433
AD  - Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, China.
FAU - Yang, Can
AU  - Yang C
AD  - Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, China.
FAU - Han, Zhengsheng
AU  - Han Z
AUID- ORCID: 0000-0003-2087-0356
AD  - Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, China.
FAU - Li, Bo
AU  - Li B
AUID- ORCID: 0000-0003-4905-2744
AD  - Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, China.
FAU - Liu, Jie
AU  - Liu J
AUID- ORCID: 0000-0002-1639-7239
AD  - Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China.
FAU - Zhang, Zhiyong
AU  - Zhang Z
AUID- ORCID: 0000-0003-1622-3447
AD  - Key Laboratory for the Physics and Chemistry of Nanodevices and Center for 
      Carbon-based Electronics, School of Electronics, Peking University, Beijing 
      100871, China.
LA  - eng
PT  - Journal Article
DEP - 20230215
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
SB  - IM
OTO - NOTNLM
OT  - carbon nanotube
OT  - degradation mechanism
OT  - displacement damage
OT  - field effect transistor
OT  - heavy ion irradiation
EDAT- 2023/02/16 06:00
MHDA- 2023/02/16 06:01
CRDT- 2023/02/15 14:13
PHST- 2023/02/16 06:00 [pubmed]
PHST- 2023/02/16 06:01 [medline]
PHST- 2023/02/15 14:13 [entrez]
AID - 10.1021/acsami.2c20005 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2023 Mar 1;15(8):10936-10946. doi: 
      10.1021/acsami.2c20005. Epub 2023 Feb 15.