PMID- 36837114
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20230227
IS  - 1996-1944 (Print)
IS  - 1996-1944 (Electronic)
IS  - 1996-1944 (Linking)
VI  - 16
IP  - 4
DP  - 2023 Feb 10
TI  - Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode 
      AlGaN/GaN HEMT.
LID - 10.3390/ma16041484 [doi]
LID - 1484
AB  - This work investigated the effects of single stress and electro-thermo-mechanical 
      coupling stress on the electrical properties of top-cooled enhancement mode 
      (E-mode) Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) high electron 
      mobility transistor (HEMT) (GS66508T). Planar pressure, linear deformation, 
      punctate deformation, environmental temperature, electro-thermal coupling, 
      thermo-mechanical coupling, and electro-thermo-mechanical coupling stresses were 
      applied to the device. It was found that different kinds of stress had different 
      influence mechanisms on the device. Namely, excessive mechanical 
      pressure/deformation stress caused serious, irrecoverable degradation of the 
      device's leakage current, with the gate leakage current (I(g)) increasing by 
      ~10(7) times and the drain-to-source leakage current (I(dss)) increasing by 
      ~10(6) times after mechanical punctate deformation of 0.5 mm. The device 
      characteristics were not restored after the mechanical stress was removed. 
      Compared with three mechanical stresses, environmental thermal stress had a 
      greater influence on the device's transfer characteristic and on-resistance 
      (R(on)) but far less influence on I(g) and I(dss). As was expected, multiple 
      stress coupled to the device promoted invalidation of the device. For more 
      in-depth investigation, finite element simulation carried out with COMSOL was 
      used to analyze the effect of electro-thermo-mechanical coupling stress on 
      top-cooled E-mode AlGaN/GaN HEMT. The results of the experiments and simulation 
      demonstrated that single and coupled stresses, especially mechanical stress 
      coupled with other stresses, degraded the electrical properties or even caused 
      irreversible damage to top-cooled E-mode AlGaN/GaN HEMT. Mechanical stress should 
      be reduced as much as possible in the packaging design, transportation, storage, 
      and application of top-cooled E-mode AlGaN/GaN HEMT.
FAU - Jiang, Jie
AU  - Jiang J
AUID- ORCID: 0000-0003-1256-4658
AD  - School of Microelectronics and Communication Engineering, Chongqing University, 
      Chongqing 400044, China.
AD  - The Science and Technology on Reliability Physics and Application of Electronic 
      Component Laboratory, China Electronic Product Reliability and Environmental 
      Testing Research Institute, Guangzhou 510610, China.
FAU - Chen, Qiuqi
AU  - Chen Q
AD  - The Science and Technology on Reliability Physics and Application of Electronic 
      Component Laboratory, China Electronic Product Reliability and Environmental 
      Testing Research Institute, Guangzhou 510610, China.
FAU - Hu, Shengdong
AU  - Hu S
AD  - School of Microelectronics and Communication Engineering, Chongqing University, 
      Chongqing 400044, China.
FAU - Shi, Yijun
AU  - Shi Y
AUID- ORCID: 0000-0001-8485-1109
AD  - The Science and Technology on Reliability Physics and Application of Electronic 
      Component Laboratory, China Electronic Product Reliability and Environmental 
      Testing Research Institute, Guangzhou 510610, China.
FAU - He, Zhiyuan
AU  - He Z
AD  - The Science and Technology on Reliability Physics and Application of Electronic 
      Component Laboratory, China Electronic Product Reliability and Environmental 
      Testing Research Institute, Guangzhou 510610, China.
FAU - Huang, Yun
AU  - Huang Y
AD  - The Science and Technology on Reliability Physics and Application of Electronic 
      Component Laboratory, China Electronic Product Reliability and Environmental 
      Testing Research Institute, Guangzhou 510610, China.
FAU - Hui, Caixin
AU  - Hui C
AD  - The Science and Technology on Reliability Physics and Application of Electronic 
      Component Laboratory, China Electronic Product Reliability and Environmental 
      Testing Research Institute, Guangzhou 510610, China.
FAU - Chen, Yiqiang
AU  - Chen Y
AUID- ORCID: 0000-0001-6901-3000
AD  - The Science and Technology on Reliability Physics and Application of Electronic 
      Component Laboratory, China Electronic Product Reliability and Environmental 
      Testing Research Institute, Guangzhou 510610, China.
FAU - Wu, Hao
AU  - Wu H
AD  - Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 401332, 
      China.
FAU - Lu, Guoguang
AU  - Lu G
AD  - The Science and Technology on Reliability Physics and Application of Electronic 
      Component Laboratory, China Electronic Product Reliability and Environmental 
      Testing Research Institute, Guangzhou 510610, China.
LA  - eng
GR  - 62004046/National Natural Science Foundation of China/
GR  - 2020B010173001/Key-Area Research and Development Program of Guangdong Province/
GR  - 2022A1515012127/Natural Science Foundation of Guangdong Province/
GR  - 2021-JCJQ-LB-049-7/the open Funds of the National Laboratory of Science and 
      Technology on Analog Integrated Circuit/
PT  - Journal Article
DEP - 20230210
PL  - Switzerland
TA  - Materials (Basel)
JT  - Materials (Basel, Switzerland)
JID - 101555929
PMC - PMC9959725
OTO - NOTNLM
OT  - AlGaN/GaN
OT  - COMSOL
OT  - HEMT
OT  - electro-thermo-mechanical coupling
COIS- The authors declare no conflict of interest.
EDAT- 2023/02/26 06:00
MHDA- 2023/02/26 06:01
PMCR- 2023/02/10
CRDT- 2023/02/25 03:25
PHST- 2022/11/07 00:00 [received]
PHST- 2023/01/14 00:00 [revised]
PHST- 2023/01/25 00:00 [accepted]
PHST- 2023/02/25 03:25 [entrez]
PHST- 2023/02/26 06:00 [pubmed]
PHST- 2023/02/26 06:01 [medline]
PHST- 2023/02/10 00:00 [pmc-release]
AID - ma16041484 [pii]
AID - materials-16-01484 [pii]
AID - 10.3390/ma16041484 [doi]
PST - epublish
SO  - Materials (Basel). 2023 Feb 10;16(4):1484. doi: 10.3390/ma16041484.