PMID- 36838025 OWN - NLM STAT- PubMed-not-MEDLINE LR - 20230301 IS - 2072-666X (Print) IS - 2072-666X (Electronic) IS - 2072-666X (Linking) VI - 14 IP - 2 DP - 2023 Jan 27 TI - Status and Prospects of Heterojunction-Based HEMT for Next-Generation Biosensors. LID - 10.3390/mi14020325 [doi] LID - 325 AB - High electron mobility transistor (HEMT) biosensors hold great potential for realizing label-free, real-time, and direct detection. Owing to their unique properties of two-dimensional electron gas (2DEG), HEMT biosensors have the ability to amplify current changes pertinent to potential changes with the introduction of any biomolecules, making them highly surface charge sensitive. This review discusses the recent advances in the use of AlGaN/GaN and AlGaAs/GaAs HEMT as biosensors in the context of different gate architectures. We describe the fundamental mechanisms underlying their operational functions, giving insight into crucial experiments as well as the necessary analysis and validation of data. Surface functionalization and biorecognition integrated into the HEMT gate structures, including self-assembly strategies, are also presented in this review, with relevant and promising applications discussed for ultra-sensitive biosensors. Obstacles and opportunities for possible optimization are also surveyed. Conclusively, future prospects for further development and applications are discussed. This review is instructive for researchers who are new to this field as well as being informative for those who work in related fields. FAU - Fauzi, Najihah AU - Fauzi N AD - Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia. FAU - Mohd Asri, Rahil Izzati AU - Mohd Asri RI AD - Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia. FAU - Mohamed Omar, Mohamad Faiz AU - Mohamed Omar MF AD - Collaborative Microelectronic Design Excellence Center (CEDEC), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia. FAU - Manaf, Asrulnizam Abd AU - Manaf AA AUID- ORCID: 0000-0002-6198-263X AD - Collaborative Microelectronic Design Excellence Center (CEDEC), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia. FAU - Kawarada, Hiroshi AU - Kawarada H AD - Faculty of Science and Engineering, Waseda University, Tokyo 169-8555, Japan. AD - The Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, Nishiwaseda, Shinjuku, Tokyo 169-0051, Japan. FAU - Falina, Shaili AU - Falina S AUID- ORCID: 0000-0003-0875-9903 AD - Collaborative Microelectronic Design Excellence Center (CEDEC), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia. AD - Faculty of Science and Engineering, Waseda University, Tokyo 169-8555, Japan. FAU - Syamsul, Mohd AU - Syamsul M AUID- ORCID: 0000-0002-3236-3303 AD - Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia. AD - Faculty of Science and Engineering, Waseda University, Tokyo 169-8555, Japan. LA - eng GR - FRGS/1/2022/STG05/USM/02/11/Ministry of Higher Education Malaysia for Fundamental Research Grant Scheme/ PT - Journal Article PT - Review DEP - 20230127 PL - Switzerland TA - Micromachines (Basel) JT - Micromachines JID - 101640903 PMC - PMC9966278 OTO - NOTNLM OT - FET OT - GaAs HEMT OT - GaN HEMT OT - ISFET OT - biosensor COIS- The authors declare no conflict of interest. EDAT- 2023/02/26 06:00 MHDA- 2023/02/26 06:01 PMCR- 2023/01/27 CRDT- 2023/02/25 03:42 PHST- 2022/12/31 00:00 [received] PHST- 2023/01/20 00:00 [revised] PHST- 2023/01/24 00:00 [accepted] PHST- 2023/02/25 03:42 [entrez] PHST- 2023/02/26 06:00 [pubmed] PHST- 2023/02/26 06:01 [medline] PHST- 2023/01/27 00:00 [pmc-release] AID - mi14020325 [pii] AID - micromachines-14-00325 [pii] AID - 10.3390/mi14020325 [doi] PST - epublish SO - Micromachines (Basel). 2023 Jan 27;14(2):325. doi: 10.3390/mi14020325.