PMID- 36838999
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20230301
IS  - 2079-4991 (Print)
IS  - 2079-4991 (Electronic)
IS  - 2079-4991 (Linking)
VI  - 13
IP  - 4
DP  - 2023 Feb 5
TI  - Numerical Investigation of GaN HEMT Terahertz Detection Model Considering 
      Multiple Scattering Mechanisms.
LID - 10.3390/nano13040632 [doi]
LID - 632
AB  - GaN high-electron-mobility transistor (HEMT) terahertz (THz) detectors have been 
      widely studied and applied in the past few decades. However, there are few 
      reports about the influence of GaN/AlGaN heterostructure material properties on 
      the detection model at present. In this paper, a response voltage model for a GaN 
      HEMT THz detector that considers the carrier scattering in a GaN/AlGaN 
      heterostructure is proposed. The phonon scattering, dislocation scattering, and 
      interface roughness scattering mechanisms are taken into account in the classic 
      THz response voltage model; furthermore, the influence of various material 
      parameters on the response voltage is studied. In a low-temperature region, 
      acoustic scattering plays an important role, and the response voltage drops with 
      an increase in temperature. In a high temperature range, optical phonon 
      scattering is the main scattering mechanism, and the detector operates in a 
      non-resonant detection mode. With an increase in carrier surface density, the 
      response voltage decreases and then increases due to piezoelectric scattering and 
      optical phonon scattering. For dislocation and interface roughness scattering, 
      the response voltage is inversely proportional to the dislocation density and 
      root mean square roughness (RMS) but is positively related to lateral correlation 
      length. Finally, a comparison between our model and the reported models shows 
      that our proposed model is more accurate.
FAU - Meng, Qingzhi
AU  - Meng Q
AD  - State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi'an 
      Jiaotong University, Xi'an 710049, China.
FAU - Lin, Qijing
AU  - Lin Q
AD  - State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi'an 
      Jiaotong University, Xi'an 710049, China.
AD  - Collaborative Innovation Center of High-End State Key Manufacturing Equipment, 
      Xi'an Jiaotong University, Xi'an 710054, China.
AD  - Shandong Laboratory of Yantai Advanced Materials and Green Manufacturing, Yantai 
      265503, China.
AD  - Xi'an Jiaotong University (Yantai) Research Institute for Intelligent Sensing 
      Technology and System, Xi'an Jiaotong University, Xi'an 710049, China.
FAU - Wang, Zelin
AU  - Wang Z
AD  - State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi'an 
      Jiaotong University, Xi'an 710049, China.
FAU - Wang, Yangtao
AU  - Wang Y
AD  - State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi'an 
      Jiaotong University, Xi'an 710049, China.
FAU - Jing, Weixuan
AU  - Jing W
AD  - State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi'an 
      Jiaotong University, Xi'an 710049, China.
FAU - Xian, Dan
AU  - Xian D
AD  - State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi'an 
      Jiaotong University, Xi'an 710049, China.
FAU - Zhao, Na
AU  - Zhao N
AD  - State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi'an 
      Jiaotong University, Xi'an 710049, China.
FAU - Yao, Kun
AU  - Yao K
AD  - State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi'an 
      Jiaotong University, Xi'an 710049, China.
FAU - Zhang, Fuzheng
AU  - Zhang F
AUID- ORCID: 0000-0002-4815-6560
AD  - State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi'an 
      Jiaotong University, Xi'an 710049, China.
FAU - Tian, Bian
AU  - Tian B
AUID- ORCID: 0000-0003-3845-5484
AD  - State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi'an 
      Jiaotong University, Xi'an 710049, China.
AD  - Shandong Laboratory of Yantai Advanced Materials and Green Manufacturing, Yantai 
      265503, China.
AD  - Xi'an Jiaotong University (Yantai) Research Institute for Intelligent Sensing 
      Technology and System, Xi'an Jiaotong University, Xi'an 710049, China.
FAU - Jiang, Zhuangde
AU  - Jiang Z
AD  - State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi'an 
      Jiaotong University, Xi'an 710049, China.
LA  - eng
GR  - 2021YFB3201800/National Key Research and Development Program/
GR  - 2022YFB3200003/National Key Research and Development Program/
GR  - 2023-JC-QN-0536/Natural Science Basic Research Program of Shaanxi/
PT  - Journal Article
DEP - 20230205
PL  - Switzerland
TA  - Nanomaterials (Basel)
JT  - Nanomaterials (Basel, Switzerland)
JID - 101610216
PMC - PMC9961425
OTO - NOTNLM
OT  - detection model
OT  - material property
OT  - response voltage
OT  - scattering mechanism
OT  - terahertz detector
COIS- The authors declare no conflict of interest.
EDAT- 2023/02/26 06:00
MHDA- 2023/02/26 06:01
PMCR- 2023/02/05
CRDT- 2023/02/25 04:03
PHST- 2023/01/07 00:00 [received]
PHST- 2023/01/31 00:00 [revised]
PHST- 2023/02/03 00:00 [accepted]
PHST- 2023/02/25 04:03 [entrez]
PHST- 2023/02/26 06:00 [pubmed]
PHST- 2023/02/26 06:01 [medline]
PHST- 2023/02/05 00:00 [pmc-release]
AID - nano13040632 [pii]
AID - nanomaterials-13-00632 [pii]
AID - 10.3390/nano13040632 [doi]
PST - epublish
SO  - Nanomaterials (Basel). 2023 Feb 5;13(4):632. doi: 10.3390/nano13040632.